JP2004006886A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2004006886A5 JP2004006886A5 JP2003148359A JP2003148359A JP2004006886A5 JP 2004006886 A5 JP2004006886 A5 JP 2004006886A5 JP 2003148359 A JP2003148359 A JP 2003148359A JP 2003148359 A JP2003148359 A JP 2003148359A JP 2004006886 A5 JP2004006886 A5 JP 2004006886A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003148359A JP4314887B2 (ja) | 1997-11-26 | 2003-05-26 | 窒化物半導体素子 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32499797 | 1997-11-26 | ||
| JP2003148359A JP4314887B2 (ja) | 1997-11-26 | 2003-05-26 | 窒化物半導体素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13283198A Division JP3456413B2 (ja) | 1997-11-26 | 1998-05-15 | 窒化物半導体の成長方法及び窒化物半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004006886A JP2004006886A (ja) | 2004-01-08 |
| JP2004006886A5 true JP2004006886A5 (https=) | 2005-09-22 |
| JP4314887B2 JP4314887B2 (ja) | 2009-08-19 |
Family
ID=30445545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003148359A Expired - Lifetime JP4314887B2 (ja) | 1997-11-26 | 2003-05-26 | 窒化物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4314887B2 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100533794C (zh) * | 2003-02-07 | 2009-08-26 | 三洋电机株式会社 | 半导体元件 |
| CN117401997B (zh) * | 2023-11-01 | 2024-09-20 | 郑州宏拓精密工具有限公司 | 一种光伏籽晶掏刀及其制备方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3974667B2 (ja) * | 1994-08-22 | 2007-09-12 | ローム株式会社 | 半導体発光素子の製法 |
| JP2828002B2 (ja) * | 1995-01-19 | 1998-11-25 | 松下電器産業株式会社 | 半導体発光素子およびその製造方法 |
| DE69622277T2 (de) * | 1995-09-18 | 2003-03-27 | Hitachi, Ltd. | Halbleitermaterial, verfahren zur herstellung des halbleitermaterials und eine halbleitervorrichtung |
| JP3350855B2 (ja) * | 1995-10-16 | 2002-11-25 | 日本電信電話株式会社 | Ｉｉｉ族窒化物半導体基板の製造方法 |
| JP3139445B2 (ja) * | 1997-03-13 | 2001-02-26 | 日本電気株式会社 | ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜 |
| JPH1143398A (ja) * | 1997-07-22 | 1999-02-16 | Mitsubishi Cable Ind Ltd | ＧａＮ系結晶成長用基板およびその用途 |
| JP3925753B2 (ja) * | 1997-10-24 | 2007-06-06 | ソニー株式会社 | 半導体素子およびその製造方法ならびに半導体発光素子 |
| JPH11135882A (ja) * | 1997-10-28 | 1999-05-21 | Sharp Corp | 化合物半導体基板、及び化合物半導体基板の製造方法、並びに発光素子 |
-
2003
- 2003-05-26 JP JP2003148359A patent/JP4314887B2/ja not_active Expired - Lifetime