JP4307516B1 - 結晶成長装置及び結晶成長方法 - Google Patents
結晶成長装置及び結晶成長方法 Download PDFInfo
- Publication number
- JP4307516B1 JP4307516B1 JP2008300253A JP2008300253A JP4307516B1 JP 4307516 B1 JP4307516 B1 JP 4307516B1 JP 2008300253 A JP2008300253 A JP 2008300253A JP 2008300253 A JP2008300253 A JP 2008300253A JP 4307516 B1 JP4307516 B1 JP 4307516B1
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- JP
- Japan
- Prior art keywords
- raw material
- crystal growth
- furnace
- melting furnace
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】結晶成長装置は、石英坩堝1を備えた結晶成長炉9と、原料溶融炉10と、前記原料溶融炉10から溶融原料3を前記石英坩堝1に繰り返し供給する供給手段22とを備える。前記結晶成長炉9は前記溶融原料3を供給する供給口を有し、前記供給口は、前記原料溶融炉10に対し接離自在21となっていてもよい。また、前記原料溶融炉10の周囲に前記結晶成長炉9の複数が配置されていてもよい。更に、前記原料溶融炉10は不溶解物質分離手段を備えていてもよい。また、結晶成長方法では、石英坩堝1に、予め溶かした溶融原料3を充填する。結晶成長方法において、前記充填の前に、前記溶融原料3から不溶解物質を除去してもよい。
【選択図】図1
Description
2、12 真空チャンバ
3 溶融原料
4 結晶
5 メインゲートバルブ
6 サブゲートバルブ
7 引き上げ機構
10 原料溶融炉
11 溶融坩堝
13 ホッパー
14 供給路
15 ゲートバルブ
20 供給装置
21 蛇管構造部
22 供給管
23 架台
30 ガイド
31 監視窓
Claims (5)
- 石英坩堝を備えた結晶成長炉と、原料溶融炉と、前記原料溶融炉から溶融原料を前記石英坩堝に繰り返し供給する供給手段とを備え、前記結晶成長炉は前記溶融原料を供給する供給口を有し、前記供給口は、前記原料溶融炉に対し接離自在とされ、前記原料溶融炉と前記結晶成長炉はそれぞれ単独での圧力調整が可能となっていることを特徴とする結晶成長装置。
- 前記原料溶融炉の周囲に前記結晶成長炉の複数が配置されている請求項1に記載の結晶成長装置。
- 前記原料溶融炉は不溶解物質分離手段を備える請求項1又は2に記載の結晶成長装置。
- 結晶成長に用いる石英坩堝に、前記石英坩堝を備えた結晶成長炉から分離された原料溶融炉内で前記結晶成長炉内圧力よりも高い圧力で予め溶かした溶融原料を供給し、前記供給が終了した後、前記結晶成長炉を前記原料溶融炉から分離し、前記結晶成長炉内で前記原料溶融炉内圧力よりも低い圧力で結晶を成長させることを特徴とする結晶成長方法。
- 前記供給の前に、前記溶融原料から不溶解物質を除去する請求項4に記載の結晶成長方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008300253A JP4307516B1 (ja) | 2008-11-25 | 2008-11-25 | 結晶成長装置及び結晶成長方法 |
KR1020090111243A KR101153907B1 (ko) | 2008-11-25 | 2009-11-18 | 결정 성장 장치 및 결정 성장 방법 |
PCT/JP2009/006257 WO2010061560A1 (ja) | 2008-11-25 | 2009-11-20 | 結晶成長装置及び結晶成長方法 |
EP09828810.3A EP2302109B1 (en) | 2008-11-25 | 2009-11-20 | Crystal growing method |
US13/002,565 US20110174214A1 (en) | 2008-11-25 | 2009-11-20 | Crystal growing apparatus and crystal growing method |
CN2009801413583A CN102187018A (zh) | 2008-11-25 | 2009-11-20 | 晶体生长装置及晶体生长方法 |
CA2739708A CA2739708A1 (en) | 2008-11-25 | 2009-11-20 | Crystal growing apparatus and crystal growing method |
TW098139849A TWI422716B (zh) | 2008-11-25 | 2009-11-24 | 長晶方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008300253A JP4307516B1 (ja) | 2008-11-25 | 2008-11-25 | 結晶成長装置及び結晶成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP4307516B1 true JP4307516B1 (ja) | 2009-08-05 |
JP2010126377A JP2010126377A (ja) | 2010-06-10 |
Family
ID=41036659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008300253A Expired - Fee Related JP4307516B1 (ja) | 2008-11-25 | 2008-11-25 | 結晶成長装置及び結晶成長方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20110174214A1 (ja) |
EP (1) | EP2302109B1 (ja) |
JP (1) | JP4307516B1 (ja) |
KR (1) | KR101153907B1 (ja) |
CN (1) | CN102187018A (ja) |
CA (1) | CA2739708A1 (ja) |
TW (1) | TWI422716B (ja) |
WO (1) | WO2010061560A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6597526B2 (ja) | 2016-09-06 | 2019-10-30 | 株式会社Sumco | 融液導入管及びこれを用いたシリコン単結晶の製造装置 |
CN108301039A (zh) * | 2017-01-12 | 2018-07-20 | 新疆知信科技有限公司 | 一种生长单晶硅的拉制装置和拉制方法 |
CN107761164B (zh) * | 2017-09-20 | 2020-09-15 | 内蒙古中环光伏材料有限公司 | 一种单晶炉拉晶生产工艺及单晶炉极限真空值获得方法 |
EP3572559B1 (en) * | 2018-03-29 | 2024-09-25 | Crystal Systems Corporation | Single crystal manufacturing device |
WO2019186871A1 (ja) | 2018-03-29 | 2019-10-03 | 株式会社クリスタルシステム | 単結晶製造装置および単結晶製造方法 |
CN112981528B (zh) * | 2021-03-17 | 2023-01-17 | 大连欣和重工有限公司 | 一种相互补料的单晶炉及其使用方法 |
CN113510235B (zh) * | 2021-06-18 | 2022-08-09 | 西安交通大学 | 一种金属的定向凝固装置及凝固方法 |
CN113699584B (zh) * | 2021-08-27 | 2022-05-06 | 昆明理工大学 | 一种直拉单晶硅微波快速补料连续生产系统及其生产方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
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US3658119A (en) * | 1968-04-03 | 1972-04-25 | Airco Inc | Apparatus for processing molten metal in a vacuum |
US4036595A (en) * | 1975-11-06 | 1977-07-19 | Siltec Corporation | Continuous crystal growing furnace |
US4200621A (en) * | 1978-07-18 | 1980-04-29 | Motorola, Inc. | Sequential purification and crystal growth |
US4396824A (en) * | 1979-10-09 | 1983-08-02 | Siltec Corporation | Conduit for high temperature transfer of molten semiconductor crystalline material |
JPS5692193A (en) * | 1979-12-27 | 1981-07-25 | Toshiba Corp | Crystal pulling up device |
US4454096A (en) * | 1981-06-15 | 1984-06-12 | Siltec Corporation | Crystal growth furnace recharge |
JPH01286987A (ja) * | 1988-05-13 | 1989-11-17 | Nkk Corp | 単結晶の製造方法及び装置 |
JPH07277871A (ja) * | 1994-04-14 | 1995-10-24 | Komatsu Electron Metals Co Ltd | 連続チャージ引上げ法の原料供給装置 |
US5993540A (en) * | 1995-06-16 | 1999-11-30 | Optoscint, Inc. | Continuous crystal plate growth process and apparatus |
JP3594155B2 (ja) * | 1996-03-21 | 2004-11-24 | 信越半導体株式会社 | シリコン単結晶引上げ装置における粒状原料の供給方法及び供給装置 |
JP2000247788A (ja) | 1999-02-26 | 2000-09-12 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法 |
JP2000264773A (ja) * | 1999-03-16 | 2000-09-26 | Super Silicon Kenkyusho:Kk | 単結晶原料供給装置 |
US6749683B2 (en) * | 2000-02-14 | 2004-06-15 | Memc Electronic Materials, Inc. | Process for producing a silicon melt |
JP2004338978A (ja) | 2003-05-13 | 2004-12-02 | Toshiba Ceramics Co Ltd | シリコン単結晶引上装置、シリコン単結晶引上方法 |
US7635414B2 (en) * | 2003-11-03 | 2009-12-22 | Solaicx, Inc. | System for continuous growing of monocrystalline silicon |
FR2869028B1 (fr) * | 2004-04-20 | 2006-07-07 | Efd Induction Sa Sa | Procede et installation de fabrication de blocs d'un materiau semiconducteur |
US7344594B2 (en) * | 2004-06-18 | 2008-03-18 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
WO2007013148A1 (ja) * | 2005-07-27 | 2007-02-01 | Sumco Corporation | シリコン単結晶引上装置及びその方法 |
KR101000326B1 (ko) * | 2007-05-30 | 2010-12-13 | 가부시키가이샤 사무코 | 실리콘 단결정 인상 장치 |
WO2009104532A1 (ja) * | 2008-02-18 | 2009-08-27 | 株式会社Sumco | シリコン単結晶成長方法 |
-
2008
- 2008-11-25 JP JP2008300253A patent/JP4307516B1/ja not_active Expired - Fee Related
-
2009
- 2009-11-18 KR KR1020090111243A patent/KR101153907B1/ko active IP Right Grant
- 2009-11-20 CN CN2009801413583A patent/CN102187018A/zh active Pending
- 2009-11-20 EP EP09828810.3A patent/EP2302109B1/en active Active
- 2009-11-20 WO PCT/JP2009/006257 patent/WO2010061560A1/ja active Application Filing
- 2009-11-20 CA CA2739708A patent/CA2739708A1/en not_active Abandoned
- 2009-11-20 US US13/002,565 patent/US20110174214A1/en not_active Abandoned
- 2009-11-24 TW TW098139849A patent/TWI422716B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN102187018A (zh) | 2011-09-14 |
KR101153907B1 (ko) | 2012-06-18 |
EP2302109A4 (en) | 2011-12-14 |
KR20100059691A (ko) | 2010-06-04 |
TW201026912A (en) | 2010-07-16 |
TWI422716B (zh) | 2014-01-11 |
EP2302109A1 (en) | 2011-03-30 |
CA2739708A1 (en) | 2010-06-03 |
US20110174214A1 (en) | 2011-07-21 |
EP2302109B1 (en) | 2014-04-16 |
JP2010126377A (ja) | 2010-06-10 |
WO2010061560A1 (ja) | 2010-06-03 |
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