JP4305682B2 - 拡散装置とこれを用いた半導体結晶への不純物拡散法 - Google Patents
拡散装置とこれを用いた半導体結晶への不純物拡散法 Download PDFInfo
- Publication number
- JP4305682B2 JP4305682B2 JP35194897A JP35194897A JP4305682B2 JP 4305682 B2 JP4305682 B2 JP 4305682B2 JP 35194897 A JP35194897 A JP 35194897A JP 35194897 A JP35194897 A JP 35194897A JP 4305682 B2 JP4305682 B2 JP 4305682B2
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- diffusion
- sample
- quartz
- lid
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- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 title claims description 108
- 239000004065 semiconductor Substances 0.000 title description 24
- 239000013078 crystal Substances 0.000 title description 19
- 239000012535 impurity Substances 0.000 title description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 62
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 description 61
- 235000012431 wafers Nutrition 0.000 description 17
- 239000003708 ampul Substances 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 108010085603 SFLLRNPND Proteins 0.000 description 1
- 239000006011 Zinc phosphide Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- HOKBIQDJCNTWST-UHFFFAOYSA-N phosphanylidenezinc;zinc Chemical compound [Zn].[Zn]=P.[Zn]=P HOKBIQDJCNTWST-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229940048462 zinc phosphide Drugs 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Sampling And Sample Adjustment (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35194897A JP4305682B2 (ja) | 1997-11-14 | 1997-11-14 | 拡散装置とこれを用いた半導体結晶への不純物拡散法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35194897A JP4305682B2 (ja) | 1997-11-14 | 1997-11-14 | 拡散装置とこれを用いた半導体結晶への不純物拡散法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11150075A JPH11150075A (ja) | 1999-06-02 |
| JPH11150075A5 JPH11150075A5 (enExample) | 2005-07-07 |
| JP4305682B2 true JP4305682B2 (ja) | 2009-07-29 |
Family
ID=18420729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35194897A Expired - Lifetime JP4305682B2 (ja) | 1997-11-14 | 1997-11-14 | 拡散装置とこれを用いた半導体結晶への不純物拡散法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4305682B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716027A (zh) * | 2013-12-13 | 2015-06-17 | 山东华光光电子有限公司 | 一种半导体激光器Zn杂质源扩散的装置及其应用 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4941625B2 (ja) * | 2005-02-28 | 2012-05-30 | 住友電気工業株式会社 | フォトダイオードの作製方法 |
| CN100377299C (zh) * | 2005-12-05 | 2008-03-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种石英盖定位保护装置 |
-
1997
- 1997-11-14 JP JP35194897A patent/JP4305682B2/ja not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716027A (zh) * | 2013-12-13 | 2015-06-17 | 山东华光光电子有限公司 | 一种半导体激光器Zn杂质源扩散的装置及其应用 |
| CN104716027B (zh) * | 2013-12-13 | 2017-08-01 | 山东华光光电子股份有限公司 | 一种半导体激光器Zn杂质源扩散的装置及其应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11150075A (ja) | 1999-06-02 |
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