JP4304984B2 - 窒化物半導体成長基板およびそれを用いた窒化物半導体素子 - Google Patents

窒化物半導体成長基板およびそれを用いた窒化物半導体素子 Download PDF

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JP4304984B2
JP4304984B2 JP2003001264A JP2003001264A JP4304984B2 JP 4304984 B2 JP4304984 B2 JP 4304984B2 JP 2003001264 A JP2003001264 A JP 2003001264A JP 2003001264 A JP2003001264 A JP 2003001264A JP 4304984 B2 JP4304984 B2 JP 4304984B2
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nitride semiconductor
layer
semiconductor layer
growth substrate
substrate
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JP2004214500A5 (enExample
JP2004214500A (ja
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雅俊 阿部
久嗣 笠井
武志 池上
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Nichia Corp
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Nichia Corp
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JP2003001264A 2003-01-07 2003-01-07 窒化物半導体成長基板およびそれを用いた窒化物半導体素子 Expired - Fee Related JP4304984B2 (ja)

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JP2003001264A JP4304984B2 (ja) 2003-01-07 2003-01-07 窒化物半導体成長基板およびそれを用いた窒化物半導体素子

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JP2004214500A JP2004214500A (ja) 2004-07-29
JP2004214500A5 JP2004214500A5 (enExample) 2006-02-16
JP4304984B2 true JP4304984B2 (ja) 2009-07-29

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Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
CN100356595C (zh) * 2004-09-27 2007-12-19 晶元光电股份有限公司 Ⅲ族氮化物半导体元件及其制造方法
CN101849034B (zh) * 2007-10-12 2011-12-21 晶能光电（江西）有限公司 使用硅烷作为前驱体制备n-型半导体材料的方法
KR101393354B1 (ko) 2007-12-27 2014-05-13 서울바이오시스 주식회사 질화갈륨계 버퍼층 및 그것을 형성하는 방법
JP6368924B2 (ja) * 2012-08-30 2018-08-08 日亜化学工業株式会社 半導体装置
CN103280503B (zh) * 2013-05-23 2017-02-08 台州市一能科技有限公司 半导体器件
JP6379265B1 (ja) * 2017-09-12 2018-08-22 日機装株式会社 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法

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