JP4287002B2 - 集積回路電子産業のための新しい研磨組成物 - Google Patents

集積回路電子産業のための新しい研磨組成物 Download PDF

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Publication number
JP4287002B2
JP4287002B2 JP31614599A JP31614599A JP4287002B2 JP 4287002 B2 JP4287002 B2 JP 4287002B2 JP 31614599 A JP31614599 A JP 31614599A JP 31614599 A JP31614599 A JP 31614599A JP 4287002 B2 JP4287002 B2 JP 4287002B2
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Japan
Prior art keywords
polishing
composition
surfactant
integrated circuit
colloidal silica
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Expired - Lifetime
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JP31614599A
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English (en)
Japanese (ja)
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JP2000144111A (ja
JP2000144111A5 (https=
Inventor
エリック・ジャキノ
パスカル・ルトゥルノ
モリス・リヴォワール
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EMD Performance Materials Corp
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AZ Electronic Materials USA Corp
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Publication of JP2000144111A5 publication Critical patent/JP2000144111A5/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP31614599A 1998-11-09 1999-11-08 集積回路電子産業のための新しい研磨組成物 Expired - Lifetime JP4287002B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9814073 1998-11-09
FR9814073A FR2785614B1 (fr) 1998-11-09 1998-11-09 Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium

Publications (3)

Publication Number Publication Date
JP2000144111A JP2000144111A (ja) 2000-05-26
JP2000144111A5 JP2000144111A5 (https=) 2005-04-07
JP4287002B2 true JP4287002B2 (ja) 2009-07-01

Family

ID=9532529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31614599A Expired - Lifetime JP4287002B2 (ja) 1998-11-09 1999-11-08 集積回路電子産業のための新しい研磨組成物

Country Status (13)

Country Link
US (2) US7144814B2 (https=)
EP (1) EP1000995B1 (https=)
JP (1) JP4287002B2 (https=)
KR (1) KR100562243B1 (https=)
CN (1) CN1137232C (https=)
AT (1) ATE232895T1 (https=)
DE (1) DE69905441T2 (https=)
ES (1) ES2192029T3 (https=)
FR (1) FR2785614B1 (https=)
ID (1) ID23760A (https=)
MY (1) MY121115A (https=)
SG (1) SG82027A1 (https=)
TW (1) TW502060B (https=)

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* Cited by examiner, † Cited by third party
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FR2785614B1 (fr) * 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
FR2792643B1 (fr) 1999-04-22 2001-07-27 Clariant France Sa Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique
JP4507141B2 (ja) * 2000-05-22 2010-07-21 隆章 徳永 研磨用組成物、その製造方法およびそれを用いた研磨方法
JP2001347450A (ja) * 2000-06-08 2001-12-18 Promos Technologies Inc 化学機械研磨装置
GB0118348D0 (en) * 2001-07-27 2001-09-19 Ghoshouni Amir A S Surface treatment of aluminium-based materials
US6743267B2 (en) 2001-10-15 2004-06-01 Dupont Air Products Nanomaterials Llc Gel-free colloidal abrasive polishing compositions and associated methods
US7077880B2 (en) 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
DE10152993A1 (de) * 2001-10-26 2003-05-08 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität
DE10164262A1 (de) * 2001-12-27 2003-07-17 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen
KR100444307B1 (ko) * 2001-12-28 2004-08-16 주식회사 하이닉스반도체 반도체소자의 금속배선 콘택플러그 형성방법
US20040077295A1 (en) * 2002-08-05 2004-04-22 Hellring Stuart D. Process for reducing dishing and erosion during chemical mechanical planarization
US6964600B2 (en) 2003-11-21 2005-11-15 Praxair Technology, Inc. High selectivity colloidal silica slurry
US20050288397A1 (en) 2004-06-29 2005-12-29 Matthew Piazza Viscous materials and method for producing
US8163049B2 (en) 2006-04-18 2012-04-24 Dupont Air Products Nanomaterials Llc Fluoride-modified silica sols for chemical mechanical planarization
FR2910180A1 (fr) * 2006-12-15 2008-06-20 St Microelectronics Procede de fabrication d'un transistor cmos a grilles metalliques duales.
US7691287B2 (en) * 2007-01-31 2010-04-06 Dupont Air Products Nanomaterials Llc Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
CN102268224B (zh) * 2010-06-01 2013-12-04 中国科学院上海微系统与信息技术研究所 可控氧化硅去除速率的化学机械抛光液
KR20140034231A (ko) 2011-05-24 2014-03-19 가부시키가이샤 구라레 화학 기계 연마용 부식 방지제, 화학 기계 연마용 슬러리, 및 화학 기계 연마 방법
CN103943491B (zh) * 2014-04-28 2016-08-24 华进半导体封装先导技术研发中心有限公司 在转接板工艺中采用cmp对基板表面进行平坦化的方法
CN105081996A (zh) * 2014-05-21 2015-11-25 浙江师范大学 一种软弹性抛光磨具的制备工艺
US10037889B1 (en) 2017-03-29 2018-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films
JP7141837B2 (ja) * 2018-03-23 2022-09-26 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法、および半導体基板の製造方法
US10763119B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US10759970B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
FR2558827B1 (fr) 1984-01-27 1986-06-27 Azote & Prod Chim Procede de fabrication de nitromethane et installation
JPS61195183A (ja) * 1985-02-22 1986-08-29 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 研磨粉固定型ポリウレタン研磨材料
JPH04291723A (ja) * 1991-03-20 1992-10-15 Asahi Denka Kogyo Kk シリコンウェハー用研摩剤
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
JP3192968B2 (ja) 1995-06-08 2001-07-30 株式会社東芝 銅系金属用研磨液および半導体装置の製造方法
US6046110A (en) * 1995-06-08 2000-04-04 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing a semiconductor device
US5958794A (en) * 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5624303A (en) * 1996-01-22 1997-04-29 Micron Technology, Inc. Polishing pad and a method for making a polishing pad with covalently bonded particles
US5733176A (en) * 1996-05-24 1998-03-31 Micron Technology, Inc. Polishing pad and method of use
US5769691A (en) * 1996-06-14 1998-06-23 Speedfam Corp Methods and apparatus for the chemical mechanical planarization of electronic devices
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
DE69830676D1 (de) * 1997-01-10 2005-08-04 Texas Instruments Inc CMP Suspension mit hoher Selektivität
FR2761629B1 (fr) * 1997-04-07 1999-06-18 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope
FR2772777B1 (fr) 1997-12-23 2000-03-10 Clariant Chimie Sa Compositions silico-acryliques, procede de preparation et application pour l'obtention de revetements durcissables thermiquement ou par rayonnement
FR2785614B1 (fr) * 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium

Also Published As

Publication number Publication date
KR100562243B1 (ko) 2006-03-22
ES2192029T3 (es) 2003-09-16
HK1028254A1 (en) 2001-02-09
FR2785614B1 (fr) 2001-01-26
EP1000995B1 (en) 2003-02-19
SG82027A1 (en) 2001-07-24
JP2000144111A (ja) 2000-05-26
DE69905441T2 (de) 2003-11-27
CN1137232C (zh) 2004-02-04
EP1000995A1 (en) 2000-05-17
US7144814B2 (en) 2006-12-05
KR20000035309A (ko) 2000-06-26
ATE232895T1 (de) 2003-03-15
DE69905441D1 (de) 2003-03-27
CN1253160A (zh) 2000-05-17
US7252695B2 (en) 2007-08-07
US20070051918A1 (en) 2007-03-08
MY121115A (en) 2005-12-30
US20020142600A1 (en) 2002-10-03
TW502060B (en) 2002-09-11
FR2785614A1 (fr) 2000-05-12
ID23760A (id) 2000-05-11

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