JP4284272B2 - レーザーマスク、レーザーマスクを利用したレーザー結晶化方法、及び平板表示装置の製造方法 - Google Patents
レーザーマスク、レーザーマスクを利用したレーザー結晶化方法、及び平板表示装置の製造方法 Download PDFInfo
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Description
図15は、照射されるレーザーエネルギー密度に対する結晶化したシリコン薄膜のグレインサイズを示すグラフである。
図1Aは、本発明の順次的横方向結晶化に使用されるレーザーマスクを示す例示図で、一般的な結晶化工程に比べて結晶化時間を短縮できるように設計されたマスクを示す。
図3A〜図3Cは、図1Aに示すレーザーマスク270を用いてシリコン薄膜を結晶化する過程を順次示す平面図である。
R<L/2 (1)
まず、ガラスのような透明な絶縁物質からなる基板820上に、シリコン酸化膜(SiO2)により構成されるバッファ層821を形成する。
Claims (21)
- 第1のブロックと第2のブロックの2つのブロックにより構成され、前記第1のブロックに形成された基準パターンと、前記第2のブロックに形成された、前記基準パターンの反転パターンとを含み、
前記基準パターンは、複数の第1透過領域と1つの第1遮断領域とから構成され、前記反転パターンは、複数の第2遮断領域と1つの第2透過領域とから構成される
ことを特徴とするレーザーマスク。 - 前記第1透過領域と前記第2遮断領域とは、互いに同一の形状を有し、前記第1遮断領域と前記第2透過領域とは、互いに同一の形状を有することを特徴とする請求項1に記載のレーザーマスク。
- 前記第1透過領域及び前記第2遮断領域は、円形状に構成されることを特徴とする請求項1に記載のレーザーマスク。
- 前記第1透過領域の半径は、隣接する2つの前記第1透過領域の中心間の距離の1/2より小さいことを特徴とする請求項3に記載のレーザーマスク。
- 前記隣接する複数の第1透過領域の中心は、正三角形、正四角形、正六角形及び正八角形のような正多角形状を構成することを特徴とする請求項1に記載のレーザーマスク。
- 前記基準パターンは、規則性を有するように構成されることを特徴とする請求項1に記載のレーザーマスク。
- 前記複数の第1透過領域は、前記第1のブロックに大きさ及び形成位置が異なるように形成されていることを特徴とする請求項1に記載のレーザーマスク。
- 第1のブロックに形成された基準パターンと、第2のブロックに形成された、前記基準パターンの反転パターンとを含み、前記基準パターンは、複数の第1透過領域と1つの第1遮断領域とから構成され、前記反転パターンは、複数の第2遮断領域と1つの第2透過領域とから構成されるレーザーマスクを利用した結晶化方法であって、
(a)シリコン薄膜が形成された基板を提供する段階と、
(b)前記シリコン薄膜の所定領域上に、前記レーザーマスクの前記第1のブロックを位置させ、前記第1のブロックを通して1次レーザービームを照射して1次結晶化領域を形成する段階と、
(c)前記レーザーマスクまたは基板を、前記照射されたシリコン薄膜の所定領域上に前記レーザーマスクの第2のブロックが位置するように移動させ、前記第2のブロックを通して2次レーザービームを照射して2次結晶化領域を形成する段階と
を含み、
前記1次レーザービームが照射される領域と前記2次レーザービームが照射される領域とはオーバーラップしない
ことを特徴とするレーザー結晶化方法。 - 前記第1透過領域と前記第2遮断領域とは、互いに同一の形状を有し、前記第1遮断領域と前記第2透過領域とは、互いに同一の形状を有することを特徴とする請求項8に記載のレーザー結晶化方法。
- 前記第1透過領域及び前記第2遮断領域は、円形状に構成されることを特徴とする請求項8に記載のレーザー結晶化方法。
- 前記第1透過領域の半径は、隣接する2つの前記第1透過領域の中心間の距離の1/2より小さいことを特徴とする請求項10に記載のレーザー結晶化方法。
- 前記隣接する複数の第1透過領域の中心は、正三角形、正四角形、正六角形及び正八角形のような正多角形状を構成することを特徴とする請求項8に記載のレーザー結晶化方法。
- 前記第1透過領域の全ては、同一の大きさを有することを特徴とする請求項8に記載のレーザー結晶化方法。
- 前記第1透過領域は、互いに異なる大きさを有することを特徴とする請求項8に記載のレーザー結晶化方法。
- 前記基準パターンは、規則性を有するように構成されることを特徴とする請求項8に記載のレーザー結晶化方法。
- 前記複数の第1透過領域は、前記第1のブロックに大きさ及び形成位置が異なるように形成されていることを特徴とする請求項8に記載のレーザー結晶化方法。
- 前記1次レーザービーム及び前記2次レーザービームは、前記シリコン薄膜を完全溶融するエネルギー密度を有することを特徴とする請求項8に記載のレーザー結晶化方法。
- 前記1次結晶化領域を形成する段階および前記2次結晶化領域を形成する段階における結晶化は、順次的横方向結晶化であることを特徴とする請求項8に記載のレーザー結晶化方法。
- 前記(b)及び(c)の段階をX軸方向に繰り返す段階と、
レーザーマスクまたは基板をY軸方向に移動させる段階と、
前記(b)及び(c)の段階を−X軸方向に繰り返す段階と
をさらに含むことを特徴とする請求項8に記載のレーザー結晶化方法。 - スイッチング素子として薄膜トランジスタを含む平板表示装置の製造方法において、
シリコン薄膜が形成された基板を提供する段階と、
前記薄膜トランジスタのアクティブ層を形成するために、第1のブロックと第2のブロックの2つのブロックにより構成され、前記第1のブロックに形成された基準パターンと、前記第2のブロックに形成された、前記基準パターンの反転パターンとを含み、前記基準パターンは、複数の第1透過領域と1つの第1遮断領域とから構成され、前記反転パターンは、複数の第2遮断領域と1つの第2透過領域とから構成されるレーザーマスクを用いて、前記シリコン薄膜を多結晶シリコン薄膜に結晶化する段階と
を含み、
前記シリコン薄膜を多結晶シリコン薄膜に結晶化する段階は、
前記シリコン薄膜の所定領域上に、前記レーザーマスクの第1のブロックを位置させ、前記第1のブロックを通して1次レーザービームを照射して1次結晶化領域を形成する段階と、
前記レーザーマスクまたは基板を、前記照射されたシリコン薄膜の所定領域上に前記レーザーマスクの第2のブロックが位置するように移動させ、前記第2のブロックを通して2次レーザービームを照射して2次結晶化領域を形成する段階と
をさらに含み、
前記1次レーザービームが照射される領域と前記2次レーザービームが照射される領域とはオーバーラップしない
ことを特徴とする平板表示装置の製造方法。 - 前記平板表示装置は、液晶表示装置または有機EL素子であることを特徴とする請求項20に記載の平板表示装置の製造方法。
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CN101587839B (zh) * | 2008-05-23 | 2011-12-21 | 清华大学 | 薄膜晶体管的制备方法 |
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