JP4282778B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4282778B2
JP4282778B2 JP22304097A JP22304097A JP4282778B2 JP 4282778 B2 JP4282778 B2 JP 4282778B2 JP 22304097 A JP22304097 A JP 22304097A JP 22304097 A JP22304097 A JP 22304097A JP 4282778 B2 JP4282778 B2 JP 4282778B2
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JP
Japan
Prior art keywords
region
regions
channel
semiconductor device
active region
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Expired - Lifetime
Application number
JP22304097A
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English (en)
Japanese (ja)
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JPH1154754A5 (enExample
JPH1154754A (ja
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP22304097A priority Critical patent/JP4282778B2/ja
Priority to US09/129,669 priority patent/US6307220B1/en
Publication of JPH1154754A publication Critical patent/JPH1154754A/ja
Publication of JPH1154754A5 publication Critical patent/JPH1154754A5/ja
Application granted granted Critical
Publication of JP4282778B2 publication Critical patent/JP4282778B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP22304097A 1997-08-05 1997-08-05 半導体装置 Expired - Lifetime JP4282778B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP22304097A JP4282778B2 (ja) 1997-08-05 1997-08-05 半導体装置
US09/129,669 US6307220B1 (en) 1997-08-05 1998-08-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22304097A JP4282778B2 (ja) 1997-08-05 1997-08-05 半導体装置

Publications (3)

Publication Number Publication Date
JPH1154754A JPH1154754A (ja) 1999-02-26
JPH1154754A5 JPH1154754A5 (enExample) 2005-05-26
JP4282778B2 true JP4282778B2 (ja) 2009-06-24

Family

ID=16791909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22304097A Expired - Lifetime JP4282778B2 (ja) 1997-08-05 1997-08-05 半導体装置

Country Status (2)

Country Link
US (1) US6307220B1 (enExample)
JP (1) JP4282778B2 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3450376B2 (ja) 1993-06-12 2003-09-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6590230B1 (en) 1996-10-15 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6335445B1 (en) * 1997-03-24 2002-01-01 Societe De Conseils De Recherches Et D'applications Scientifiques (S.C.R.A.S.) Derivatives of 2-(iminomethyl)amino-phenyl, their preparation, their use as medicaments and the pharmaceutical compositions containing them
JP4017706B2 (ja) 1997-07-14 2007-12-05 株式会社半導体エネルギー研究所 半導体装置
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JP4236722B2 (ja) 1998-02-05 2009-03-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6271101B1 (en) 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI263336B (en) * 2000-06-12 2006-10-01 Semiconductor Energy Lab Thin film transistors and semiconductor device
JP2002083974A (ja) 2000-06-19 2002-03-22 Semiconductor Energy Lab Co Ltd 半導体装置
US6828587B2 (en) * 2000-06-19 2004-12-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7503975B2 (en) * 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
US6724037B2 (en) 2000-07-21 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
US6703265B2 (en) * 2000-08-02 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7238557B2 (en) * 2001-11-14 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
KR100626372B1 (ko) * 2004-04-09 2006-09-20 삼성전자주식회사 전계 효과 트랜지스터를 갖는 반도체 소자 및 그 제조 방법
US8030655B2 (en) 2007-12-03 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor
JP5527966B2 (ja) 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 薄膜トランジスタ
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
CN108604597B (zh) 2016-01-15 2021-09-17 创世舫电子有限公司 具有al(1-x)sixo栅极绝缘体的增强模式iii-氮化物器件
WO2017210323A1 (en) 2016-05-31 2017-12-07 Transphorm Inc. Iii-nitride devices including a graded depleting layer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5859443A (en) 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
GB2081018B (en) * 1980-07-31 1985-06-26 Suwa Seikosha Kk Active matrix assembly for display device
US4549336A (en) 1981-12-28 1985-10-29 Mostek Corporation Method of making MOS read only memory by specified double implantation
DE3542482A1 (de) 1985-11-30 1987-06-04 Licentia Gmbh Modulationsdotierter feldeffekttransistor
US5272365A (en) 1990-03-29 1993-12-21 Kabushiki Kaisha Toshiba Silicon transistor device with silicon-germanium electron gas hetero structure channel
US5210437A (en) 1990-04-20 1993-05-11 Kabushiki Kaisha Toshiba MOS device having a well layer for controlling threshold voltage
US5461250A (en) * 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
US5324960A (en) 1993-01-19 1994-06-28 Motorola, Inc. Dual-transistor structure and method of formation
US5792679A (en) * 1993-08-30 1998-08-11 Sharp Microelectronics Technology, Inc. Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant
JP3184065B2 (ja) 1994-07-25 2001-07-09 セイコーインスツルメンツ株式会社 半導体集積回路装置及び電子機器
US5786618A (en) 1996-03-21 1998-07-28 United Microelectronics, Corp. ROM memory cell with non-uniform threshold voltage
JP4059939B2 (ja) 1996-08-23 2008-03-12 株式会社半導体エネルギー研究所 パワーｍｏｓデバイス及びその作製方法
JPH11233788A (ja) * 1998-02-09 1999-08-27 Semiconductor Energy Lab Co Ltd 半導体装置

Also Published As

Publication number Publication date
US6307220B1 (en) 2001-10-23
JPH1154754A (ja) 1999-02-26

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