JP4271910B2 - 半導体集積回路および電源回路 - Google Patents
半導体集積回路および電源回路 Download PDFInfo
- Publication number
- JP4271910B2 JP4271910B2 JP2002225165A JP2002225165A JP4271910B2 JP 4271910 B2 JP4271910 B2 JP 4271910B2 JP 2002225165 A JP2002225165 A JP 2002225165A JP 2002225165 A JP2002225165 A JP 2002225165A JP 4271910 B2 JP4271910 B2 JP 4271910B2
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- JP
- Japan
- Prior art keywords
- mos transistor
- circuit
- drain
- voltage
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims description 9
- 230000015556 catabolic process Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 6
- 238000009499 grossing Methods 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 101100464782 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CMP2 gene Proteins 0.000 description 3
- 101100464779 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CNA1 gene Proteins 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Images
Landscapes
- Dc-Dc Converters (AREA)
- Logic Circuits (AREA)
- Control Of Electrical Variables (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002225165A JP4271910B2 (ja) | 2002-08-01 | 2002-08-01 | 半導体集積回路および電源回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002225165A JP4271910B2 (ja) | 2002-08-01 | 2002-08-01 | 半導体集積回路および電源回路 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004072829A JP2004072829A (ja) | 2004-03-04 |
JP2004072829A5 JP2004072829A5 (enrdf_load_stackoverflow) | 2005-10-27 |
JP4271910B2 true JP4271910B2 (ja) | 2009-06-03 |
Family
ID=32012911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002225165A Expired - Fee Related JP4271910B2 (ja) | 2002-08-01 | 2002-08-01 | 半導体集積回路および電源回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4271910B2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3930498B2 (ja) * | 2003-11-25 | 2007-06-13 | 株式会社東芝 | レベルシフト回路 |
JP4497991B2 (ja) * | 2004-04-14 | 2010-07-07 | 株式会社ルネサステクノロジ | 電源ドライバ回路及びスイッチング電源装置 |
JP4545548B2 (ja) * | 2004-10-21 | 2010-09-15 | ルネサスエレクトロニクス株式会社 | 半導体集積回路及び半導体装置 |
JP4957422B2 (ja) * | 2007-07-13 | 2012-06-20 | ヤマハ株式会社 | レベルシフト回路 |
JP2010021712A (ja) * | 2008-07-09 | 2010-01-28 | Denso Corp | レベルシフト回路 |
JP5389762B2 (ja) | 2010-09-30 | 2014-01-15 | パナソニック株式会社 | レベルシフト回路 |
JP6031871B2 (ja) * | 2012-07-25 | 2016-11-24 | 富士通株式会社 | Dcdcコンバータ |
CN109660234B (zh) * | 2018-12-17 | 2023-04-11 | 珠海亿智电子科技有限公司 | 一种利用1.8v耐压器件实现的耐5v电平偏移电路 |
CN115224936B (zh) * | 2021-04-15 | 2025-05-16 | 瑞昱半导体股份有限公司 | 具有自适应机制的电压转换电路 |
CN116346122B (zh) * | 2023-03-21 | 2024-09-27 | 北京炎黄国芯科技有限公司 | 一种用于高压到低压的电平转换电路 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4378781B2 (ja) * | 1998-08-18 | 2009-12-09 | ソニー株式会社 | 半導体装置とその製造方法 |
JP2000307406A (ja) * | 1999-04-22 | 2000-11-02 | Denso Corp | 負荷駆動回路 |
JP4462734B2 (ja) * | 2000-08-10 | 2010-05-12 | 日本テキサス・インスツルメンツ株式会社 | 駆動信号供給回路 |
-
2002
- 2002-08-01 JP JP2002225165A patent/JP4271910B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2004072829A (ja) | 2004-03-04 |
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