JP4255616B2 - 電界放出表示装置及びその製造方法 - Google Patents

電界放出表示装置及びその製造方法 Download PDF

Info

Publication number
JP4255616B2
JP4255616B2 JP2000512225A JP2000512225A JP4255616B2 JP 4255616 B2 JP4255616 B2 JP 4255616B2 JP 2000512225 A JP2000512225 A JP 2000512225A JP 2000512225 A JP2000512225 A JP 2000512225A JP 4255616 B2 JP4255616 B2 JP 4255616B2
Authority
JP
Japan
Prior art keywords
layer
aluminum
display device
field emission
band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000512225A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001516942A (ja
JP2001516942A5 (enExample
Inventor
キショアー、ケイ.チャクラボーティー
スワヤンブー、ラマニ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of JP2001516942A publication Critical patent/JP2001516942A/ja
Publication of JP2001516942A5 publication Critical patent/JP2001516942A5/ja
Application granted granted Critical
Publication of JP4255616B2 publication Critical patent/JP4255616B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02Electron guns
    • H01J3/021Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/14Manufacture of electrodes or electrode systems of non-emitting electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/304Field emission cathodes
    • H01J2201/30403Field emission cathodes characterised by the emitter shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00Electron emission display panels, e.g. field emission display panels

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
JP2000512225A 1997-09-17 1998-09-10 電界放出表示装置及びその製造方法 Expired - Fee Related JP4255616B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/932,318 1997-09-17
US08/932,318 US5894188A (en) 1997-09-17 1997-09-17 Dual-layer metal for flat panel display
PCT/US1998/018786 WO1999014780A1 (en) 1997-09-17 1998-09-10 Dual-layer metal for flat panel display

Publications (3)

Publication Number Publication Date
JP2001516942A JP2001516942A (ja) 2001-10-02
JP2001516942A5 JP2001516942A5 (enExample) 2006-01-05
JP4255616B2 true JP4255616B2 (ja) 2009-04-15

Family

ID=25462137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000512225A Expired - Fee Related JP4255616B2 (ja) 1997-09-17 1998-09-10 電界放出表示装置及びその製造方法

Country Status (6)

Country Link
US (3) US5894188A (enExample)
EP (1) EP1016113B1 (enExample)
JP (1) JP4255616B2 (enExample)
KR (1) KR20010023850A (enExample)
DE (1) DE69839124T2 (enExample)
WO (1) WO1999014780A1 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5894188A (en) * 1997-09-17 1999-04-13 Candescent Technologies Corporation Dual-layer metal for flat panel display
US6433473B1 (en) * 1998-10-29 2002-08-13 Candescent Intellectual Property Services, Inc. Row electrode anodization
US6822386B2 (en) * 1999-03-01 2004-11-23 Micron Technology, Inc. Field emitter display assembly having resistor layer
US6462467B1 (en) * 1999-08-11 2002-10-08 Sony Corporation Method for depositing a resistive material in a field emission cathode
US7052350B1 (en) * 1999-08-26 2006-05-30 Micron Technology, Inc. Field emission device having insulated column lines and method manufacture
US6635983B1 (en) * 1999-09-02 2003-10-21 Micron Technology, Inc. Nitrogen and phosphorus doped amorphous silicon as resistor for field emission device baseplate
US6710525B1 (en) * 1999-10-19 2004-03-23 Candescent Technologies Corporation Electrode structure and method for forming electrode structure for a flat panel display
US20020184970A1 (en) * 2001-12-13 2002-12-12 Wickersham Charles E. Sptutter targets and methods of manufacturing same to reduce particulate emission during sputtering
KR100783304B1 (ko) 2000-05-11 2007-12-10 토소우 에스엠디, 인크 음파 위상 변화 검출을 이용하여 스퍼터 타겟들에서 비파괴 청결도를 평가하는 방법 및 장치
US6800877B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6801002B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
US7064500B2 (en) * 2000-05-26 2006-06-20 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6407516B1 (en) 2000-05-26 2002-06-18 Exaconnect Inc. Free space electron switch
US6545425B2 (en) 2000-05-26 2003-04-08 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
KR20030029049A (ko) * 2000-05-31 2003-04-11 켄데스센트 테크날러지스 코퍼레이션 다층 전극 구조 및 그것의 형성방법
US6796867B2 (en) * 2000-10-27 2004-09-28 Science Applications International Corporation Use of printing and other technology for micro-component placement
US6570335B1 (en) 2000-10-27 2003-05-27 Science Applications International Corporation Method and system for energizing a micro-component in a light-emitting panel
US6620012B1 (en) * 2000-10-27 2003-09-16 Science Applications International Corporation Method for testing a light-emitting panel and the components therein
US6545422B1 (en) * 2000-10-27 2003-04-08 Science Applications International Corporation Socket for use with a micro-component in a light-emitting panel
US6801001B2 (en) * 2000-10-27 2004-10-05 Science Applications International Corporation Method and apparatus for addressing micro-components in a plasma display panel
US6762566B1 (en) 2000-10-27 2004-07-13 Science Applications International Corporation Micro-component for use in a light-emitting panel
US6764367B2 (en) * 2000-10-27 2004-07-20 Science Applications International Corporation Liquid manufacturing processes for panel layer fabrication
US6822626B2 (en) 2000-10-27 2004-11-23 Science Applications International Corporation Design, fabrication, testing, and conditioning of micro-components for use in a light-emitting panel
US6612889B1 (en) * 2000-10-27 2003-09-02 Science Applications International Corporation Method for making a light-emitting panel
US6935913B2 (en) * 2000-10-27 2005-08-30 Science Applications International Corporation Method for on-line testing of a light emitting panel
US7288014B1 (en) 2000-10-27 2007-10-30 Science Applications International Corporation Design, fabrication, testing, and conditioning of micro-components for use in a light-emitting panel
KR100841915B1 (ko) * 2001-04-04 2008-06-30 토소우 에스엠디, 인크 알루미늄 또는 알루미늄 합금 스퍼터링 타겟 내의알루미늄 산화물 함유물에 대한 임계 크기 결정 방법
US6632117B1 (en) * 2001-06-26 2003-10-14 Candescent Intellectual Property Services, Inc. Frit protection in sealing process for flat panel displays
US6565400B1 (en) * 2001-06-26 2003-05-20 Candescent Technologies Corporation Frit protection in sealing process for flat panel displays
KR100923000B1 (ko) * 2001-08-09 2009-10-22 토소우 에스엠디, 인크 크기와 위치에 의해 분류되는 흠의 형태에 의한 타켓 청정도 특성을 비파괴적으로 결정하기 위한 방법 및 장치
US6406926B1 (en) * 2001-08-15 2002-06-18 Motorola, Inc. Method of forming a vacuum micro-electronic device
US7064475B2 (en) * 2002-12-26 2006-06-20 Canon Kabushiki Kaisha Electron source structure covered with resistance film
US20050189164A1 (en) * 2004-02-26 2005-09-01 Chang Chi L. Speaker enclosure having outer flared tube
US11483053B2 (en) 2018-06-01 2022-10-25 Telefonaktiebolaget Lm Ericsson (Publ) Approaches for beam selection
EP3888258B1 (en) 2018-11-30 2022-08-10 Telefonaktiebolaget Lm Ericsson (Publ) Approaches for beam selection

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144191A (en) * 1991-06-12 1992-09-01 Mcnc Horizontal microelectronic field emission devices
WO1994020975A1 (en) * 1993-03-11 1994-09-15 Fed Corporation Emitter tip structure and field emission device comprising same, and method of making same
US5601466A (en) * 1995-04-19 1997-02-11 Texas Instruments Incorporated Method for fabricating field emission device metallization
AU6273396A (en) * 1995-06-13 1997-01-09 Advanced Vision Technologies, Inc. Laminar composite lateral field-emission cathode and fabrica tion process
US5780960A (en) * 1996-12-18 1998-07-14 Texas Instruments Incorporated Micro-machined field emission microtips
US5894188A (en) * 1997-09-17 1999-04-13 Candescent Technologies Corporation Dual-layer metal for flat panel display

Also Published As

Publication number Publication date
US5894188A (en) 1999-04-13
EP1016113B1 (en) 2008-02-13
EP1016113A4 (en) 2005-08-17
JP2001516942A (ja) 2001-10-02
DE69839124D1 (de) 2008-03-27
EP1016113A1 (en) 2000-07-05
US6019657A (en) 2000-02-01
WO1999014780A1 (en) 1999-03-25
DE69839124T2 (de) 2009-03-05
KR20010023850A (ko) 2001-03-26
US6225732B1 (en) 2001-05-01

Similar Documents

Publication Publication Date Title
JP4255616B2 (ja) 電界放出表示装置及びその製造方法
US6975075B2 (en) Field emission display
EP1038303B1 (en) Patterned resistor suitable for electron-emitting device, and associated fabrication method
JP3116398B2 (ja) 平面型電子放出素子の製造方法及び平面型電子放出素子
JPH09274845A (ja) 電子放出素子と電子放出素子用収束電極およびその製造方法
JP3409468B2 (ja) 粒子放出装置、電界放出型装置及びこれらの製造方法
US6448708B1 (en) Dual-layer metal for flat panel display
US6297587B1 (en) Color cathode field emission device, cold cathode field emission display, and process for the production thereof
JPH0896704A (ja) 粒子放出装置、電界放出型装置及びこれらの製造方法
US6750606B2 (en) Gate-to-electrode connection in a flat panel display
JP2001505355A (ja) マイクロチップ支持体を通して観測可能なマイクロチップ電子源を備えたディスプレイスクリーンならびにマイクロチップ電子源の製造方法
JP3526462B2 (ja) 電界放出型陰極装置
JP3084768B2 (ja) 電界放出型陰極装置
JP2003517698A (ja) 電子放出デバイス製造中のspindtタイプカソードの保護方法
JPH1021838A (ja) Ac型プラズマディスプレイパネル及びその製造方法並びに製造工程での中間品
JPH09283013A (ja) 電子放出素子と電子放出素子用収束電極およびその製造方法
JP2000011892A (ja) ガス放電型表示パネルおよびそれを用いた表示装置
JP2933855B2 (ja) 電子放出素子及びそれを用いた電子線発生装置並びに画像形成装置の製造方法
JPH1064433A (ja) ガス放電型表示装置
JP2000235832A (ja) 冷陰極電界電子放出素子、冷陰極電界電子放出型表示装置、及びそれらの製造方法
JPH0877939A (ja) ディスプレイ素子
JP2003242903A (ja) 電界放出型ディスプレイ用部材およびその製造方法
JP2002117769A (ja) ガス放電型表示装置とその製造方法
JPH08273517A (ja) 電子放出素子及び電子源及び画像形成装置
JP2002015677A (ja) ガス放電型表示パネル

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050822

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050822

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20051202

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20060203

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080513

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080610

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081003

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081127

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090106

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090128

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120206

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130206

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140206

Year of fee payment: 5

LAPS Cancellation because of no payment of annual fees