JP4255100B2 - ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法 - Google Patents

ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法 Download PDF

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Publication number
JP4255100B2
JP4255100B2 JP2001108627A JP2001108627A JP4255100B2 JP 4255100 B2 JP4255100 B2 JP 4255100B2 JP 2001108627 A JP2001108627 A JP 2001108627A JP 2001108627 A JP2001108627 A JP 2001108627A JP 4255100 B2 JP4255100 B2 JP 4255100B2
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JP
Japan
Prior art keywords
group
carbon atoms
general formula
alicyclic hydrocarbon
excimer laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001108627A
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English (en)
Japanese (ja)
Other versions
JP2002303980A5 (OSRAM
JP2002303980A (ja
Inventor
亨 藤森
邦彦 児玉
健一郎 佐藤
利明 青合
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2001108627A priority Critical patent/JP4255100B2/ja
Priority to TW091106854A priority patent/TWI298116B/zh
Priority to KR1020020018519A priority patent/KR100885691B1/ko
Priority to US10/116,137 priority patent/US6692884B2/en
Publication of JP2002303980A publication Critical patent/JP2002303980A/ja
Publication of JP2002303980A5 publication Critical patent/JP2002303980A5/ja
Application granted granted Critical
Publication of JP4255100B2 publication Critical patent/JP4255100B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2001108627A 2001-04-06 2001-04-06 ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法 Expired - Fee Related JP4255100B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001108627A JP4255100B2 (ja) 2001-04-06 2001-04-06 ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法
TW091106854A TWI298116B (en) 2001-04-06 2002-04-04 Positive photoresist composition
KR1020020018519A KR100885691B1 (ko) 2001-04-06 2002-04-04 포지티브 포토레지스트 조성물 및 패턴형성방법
US10/116,137 US6692884B2 (en) 2001-04-06 2002-04-05 Positive photoresist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001108627A JP4255100B2 (ja) 2001-04-06 2001-04-06 ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法

Publications (3)

Publication Number Publication Date
JP2002303980A JP2002303980A (ja) 2002-10-18
JP2002303980A5 JP2002303980A5 (OSRAM) 2006-01-19
JP4255100B2 true JP4255100B2 (ja) 2009-04-15

Family

ID=18960727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001108627A Expired - Fee Related JP4255100B2 (ja) 2001-04-06 2001-04-06 ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法

Country Status (4)

Country Link
US (1) US6692884B2 (OSRAM)
JP (1) JP4255100B2 (OSRAM)
KR (1) KR100885691B1 (OSRAM)
TW (1) TWI298116B (OSRAM)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2809829B1 (fr) * 2000-06-05 2002-07-26 Rhodia Chimie Sa Nouvelle composition photosensible pour la fabrication de photoresist
KR100795109B1 (ko) * 2001-02-23 2008-01-17 후지필름 가부시키가이샤 포지티브 감광성 조성물
TW565748B (en) * 2001-05-17 2003-12-11 Fuji Photo Film Co Ltd Positive radiation-sensitive composition
US7510822B2 (en) * 2002-04-10 2009-03-31 Fujifilm Corporation Stimulation sensitive composition and compound
JP4281326B2 (ja) * 2002-07-25 2009-06-17 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4067359B2 (ja) * 2002-08-08 2008-03-26 富士フイルム株式会社 ポジ型レジスト組成物
JP3986927B2 (ja) * 2002-08-22 2007-10-03 富士通株式会社 半導体装置の製造方法
JP2004233953A (ja) * 2002-12-02 2004-08-19 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物
JP4434762B2 (ja) 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
US20060154171A1 (en) * 2003-02-25 2006-07-13 Taku Hirayama Photoresist composition and method of forming resist pattern
JP2005099646A (ja) * 2003-03-28 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法
JP4083053B2 (ja) * 2003-03-31 2008-04-30 富士フイルム株式会社 ポジ型レジスト組成物
US20050058933A1 (en) * 2003-09-17 2005-03-17 Meagley Robert P. Quantum efficient photoacid generators for photolithographic processes
US7427463B2 (en) * 2003-10-14 2008-09-23 Intel Corporation Photoresists with reduced outgassing for extreme ultraviolet lithography
JP4365235B2 (ja) * 2004-02-20 2009-11-18 富士フイルム株式会社 液浸露光用レジスト組成物及びそれを用いたパターン形成方法
KR100574495B1 (ko) * 2004-12-15 2006-04-27 주식회사 하이닉스반도체 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물
JP4687878B2 (ja) * 2005-05-27 2011-05-25 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
KR100833706B1 (ko) 2007-02-01 2008-05-29 삼성전자주식회사 감광성 폴리이미드 조성물, 폴리이미드 필름 및 이를 이용한 반도체 소자
US7803521B2 (en) * 2007-11-19 2010-09-28 International Business Machines Corporation Photoresist compositions and process for multiple exposures with multiple layer photoresist systems
CN109991811A (zh) * 2019-02-27 2019-07-09 江苏南大光电材料股份有限公司 一种酸扩散抑制剂及其制备方法与光刻胶组合物

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0792680A (ja) * 1993-06-29 1995-04-07 Nippon Zeon Co Ltd レジスト組成物
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3712218B2 (ja) 1997-01-24 2005-11-02 東京応化工業株式会社 化学増幅型ホトレジスト組成物
JP3546679B2 (ja) 1997-01-29 2004-07-28 住友化学工業株式会社 化学増幅型ポジ型レジスト組成物
JP3832780B2 (ja) 1997-02-27 2006-10-11 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JP3902835B2 (ja) * 1997-06-27 2007-04-11 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP3847454B2 (ja) * 1998-03-20 2006-11-22 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法
DE69915928T2 (de) * 1998-05-19 2005-04-14 Jsr Corp. Diazodisulfonverbindung und strahlungsempfindliche Harzzusammensetzung
JP3642228B2 (ja) * 1999-05-19 2005-04-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
US6787283B1 (en) * 1999-07-22 2004-09-07 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
EP1143299B1 (en) * 2000-04-04 2003-07-16 Sumitomo Chemical Company, Limited Chemically amplified positive resist composition
TWI286664B (en) * 2000-06-23 2007-09-11 Sumitomo Chemical Co Chemical amplification type positive resist composition and sulfonium salt
TW538056B (en) * 2000-07-11 2003-06-21 Samsung Electronics Co Ltd Resist composition comprising photosensitive polymer having lactone in its backbone
EP1179750B1 (en) * 2000-08-08 2012-07-25 FUJIFILM Corporation Positive photosensitive composition and method for producing a precision integrated circuit element using the same
KR100750267B1 (ko) * 2001-04-03 2007-08-17 후지필름 가부시키가이샤 포지티브 포토레지스트 조성물

Also Published As

Publication number Publication date
KR100885691B1 (ko) 2009-02-26
KR20020079483A (ko) 2002-10-19
US20030044715A1 (en) 2003-03-06
TWI298116B (en) 2008-06-21
JP2002303980A (ja) 2002-10-18
US6692884B2 (en) 2004-02-17

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