JP4243029B2 - ポジ型化学増幅レジスト組成物 - Google Patents

ポジ型化学増幅レジスト組成物 Download PDF

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Publication number
JP4243029B2
JP4243029B2 JP2001028336A JP2001028336A JP4243029B2 JP 4243029 B2 JP4243029 B2 JP 4243029B2 JP 2001028336 A JP2001028336 A JP 2001028336A JP 2001028336 A JP2001028336 A JP 2001028336A JP 4243029 B2 JP4243029 B2 JP 4243029B2
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Japan
Prior art keywords
group
acid
compound
compounds
embedded image
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Expired - Fee Related
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JP2001028336A
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English (en)
Japanese (ja)
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JP2002229190A5 (enExample
JP2002229190A (ja
Inventor
豊 阿出川
利明 青合
一平 中村
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2001028336A priority Critical patent/JP4243029B2/ja
Priority to KR1020020006158A priority patent/KR100795112B1/ko
Priority to US10/062,497 priority patent/US6720128B2/en
Priority to TW091101997A priority patent/TW564330B/zh
Publication of JP2002229190A publication Critical patent/JP2002229190A/ja
Publication of JP2002229190A5 publication Critical patent/JP2002229190A5/ja
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Publication of JP4243029B2 publication Critical patent/JP4243029B2/ja
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  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2001028336A 2001-02-05 2001-02-05 ポジ型化学増幅レジスト組成物 Expired - Fee Related JP4243029B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001028336A JP4243029B2 (ja) 2001-02-05 2001-02-05 ポジ型化学増幅レジスト組成物
KR1020020006158A KR100795112B1 (ko) 2001-02-05 2002-02-04 포지티브 레지스트 조성물
US10/062,497 US6720128B2 (en) 2001-02-05 2002-02-05 Positive resist composition
TW091101997A TW564330B (en) 2001-02-05 2002-02-05 Positive resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001028336A JP4243029B2 (ja) 2001-02-05 2001-02-05 ポジ型化学増幅レジスト組成物

Publications (3)

Publication Number Publication Date
JP2002229190A JP2002229190A (ja) 2002-08-14
JP2002229190A5 JP2002229190A5 (enExample) 2006-01-19
JP4243029B2 true JP4243029B2 (ja) 2009-03-25

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JP2001028336A Expired - Fee Related JP4243029B2 (ja) 2001-02-05 2001-02-05 ポジ型化学増幅レジスト組成物

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JP (1) JP4243029B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100535749C (zh) * 2002-10-23 2009-09-02 Az电子材料（日本）株式会社 化学增强正性光敏树脂组合物
JP4418634B2 (ja) * 2003-02-04 2010-02-17 富士フイルム株式会社 化合物、該化合物を含有するポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法
JP4222850B2 (ja) * 2003-02-10 2009-02-12 Ｓｐａｎｓｉｏｎ Ｊａｐａｎ株式会社 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法
KR101338716B1 (ko) * 2006-03-30 2013-12-06 제이에스알 가부시끼가이샤 감방사선성 절연 수지 조성물
JP4852575B2 (ja) * 2008-07-03 2012-01-11 日本テキサス・インスツルメンツ・セミコンダクター株式会社 感放射線性樹脂組成物およびそれを用いた半導体装置の製造方法
JP6342683B2 (ja) * 2014-03-20 2018-06-13 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物
JP6667361B2 (ja) * 2016-05-06 2020-03-18 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物
JP6845050B2 (ja) * 2017-03-10 2021-03-17 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物、鋳型付き基板の製造方法、及びめっき造形物の製造方法
JP7375685B2 (ja) * 2019-08-02 2023-11-08 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP7334684B2 (ja) * 2019-08-02 2023-08-29 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7351257B2 (ja) * 2019-08-14 2023-09-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7354954B2 (ja) * 2019-09-04 2023-10-03 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7600752B2 (ja) * 2020-03-18 2024-12-17 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7600753B2 (ja) * 2020-03-18 2024-12-17 信越化学工業株式会社 レジスト材料及びパターン形成方法

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