JP4240679B2 - スパッタリング用ターゲットの製造方法 - Google Patents

スパッタリング用ターゲットの製造方法 Download PDF

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Publication number
JP4240679B2
JP4240679B2 JP26713699A JP26713699A JP4240679B2 JP 4240679 B2 JP4240679 B2 JP 4240679B2 JP 26713699 A JP26713699 A JP 26713699A JP 26713699 A JP26713699 A JP 26713699A JP 4240679 B2 JP4240679 B2 JP 4240679B2
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Japan
Prior art keywords
alloy powder
target
rare earth
sputtering
producing
Prior art date
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Expired - Lifetime
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JP26713699A
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English (en)
Japanese (ja)
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JP2001089849A (ja
JP2001089849A5 (enExample
Inventor
尊礼 永田
学 佐々木
均 木村
紀夫 横山
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Sony Corp
Original Assignee
Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP26713699A priority Critical patent/JP4240679B2/ja
Priority to EP00120582A priority patent/EP1087032A1/en
Priority to US09/666,241 priority patent/US6409965B1/en
Priority to KR1020000055414A priority patent/KR100714345B1/ko
Publication of JP2001089849A publication Critical patent/JP2001089849A/ja
Publication of JP2001089849A5 publication Critical patent/JP2001089849A5/ja
Application granted granted Critical
Publication of JP4240679B2 publication Critical patent/JP4240679B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
JP26713699A 1999-09-21 1999-09-21 スパッタリング用ターゲットの製造方法 Expired - Lifetime JP4240679B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP26713699A JP4240679B2 (ja) 1999-09-21 1999-09-21 スパッタリング用ターゲットの製造方法
EP00120582A EP1087032A1 (en) 1999-09-21 2000-09-20 Sputtering target and its manufacturing method
US09/666,241 US6409965B1 (en) 1999-09-21 2000-09-21 Sputtering target and its manufacturing method
KR1020000055414A KR100714345B1 (ko) 1999-09-21 2000-09-21 스퍼터링 표적 및 그의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26713699A JP4240679B2 (ja) 1999-09-21 1999-09-21 スパッタリング用ターゲットの製造方法

Publications (3)

Publication Number Publication Date
JP2001089849A JP2001089849A (ja) 2001-04-03
JP2001089849A5 JP2001089849A5 (enExample) 2006-04-27
JP4240679B2 true JP4240679B2 (ja) 2009-03-18

Family

ID=17440590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26713699A Expired - Lifetime JP4240679B2 (ja) 1999-09-21 1999-09-21 スパッタリング用ターゲットの製造方法

Country Status (4)

Country Link
US (1) US6409965B1 (enExample)
EP (1) EP1087032A1 (enExample)
JP (1) JP4240679B2 (enExample)
KR (1) KR100714345B1 (enExample)

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US6506289B2 (en) 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
US20030002043A1 (en) * 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US7469558B2 (en) 2001-07-10 2008-12-30 Springworks, Llc As-deposited planar optical waveguides with low scattering loss and methods for their manufacture
AU2002333640A1 (en) * 2001-09-17 2003-04-01 Heraeus, Inc. Refurbishing spent sputtering targets
US7404877B2 (en) 2001-11-09 2008-07-29 Springworks, Llc Low temperature zirconia based thermal barrier layer by PVD
US6884327B2 (en) 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US7378356B2 (en) 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8404376B2 (en) 2002-08-09 2013-03-26 Infinite Power Solutions, Inc. Metal film encapsulation
US7993773B2 (en) 2002-08-09 2011-08-09 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
WO2004021532A1 (en) 2002-08-27 2004-03-11 Symmorphix, Inc. Optically coupling into highly uniform waveguides
US6863862B2 (en) * 2002-09-04 2005-03-08 Philip Morris Usa Inc. Methods for modifying oxygen content of atomized intermetallic aluminide powders and for forming articles from the modified powders
US7205662B2 (en) 2003-02-27 2007-04-17 Symmorphix, Inc. Dielectric barrier layer films
US7238628B2 (en) 2003-05-23 2007-07-03 Symmorphix, Inc. Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US7504008B2 (en) * 2004-03-12 2009-03-17 Applied Materials, Inc. Refurbishment of sputtering targets
KR101127370B1 (ko) 2004-12-08 2012-03-29 인피니트 파워 솔루션스, 인크. ＬｉＣｏＯ２의 증착
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US20070125646A1 (en) * 2005-11-25 2007-06-07 Applied Materials, Inc. Sputtering target for titanium sputtering chamber
US8062708B2 (en) 2006-09-29 2011-11-22 Infinite Power Solutions, Inc. Masking of and material constraint for depositing battery layers on flexible substrates
US20080078268A1 (en) 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7901552B2 (en) 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US8268488B2 (en) 2007-12-21 2012-09-18 Infinite Power Solutions, Inc. Thin film electrolyte for thin film batteries
TWI441937B (zh) 2007-12-21 2014-06-21 Infinite Power Solutions Inc 形成用於電解質薄膜之濺鍍靶材的方法
KR101606183B1 (ko) 2008-01-11 2016-03-25 사푸라스트 리써치 엘엘씨 박막 배터리 및 기타 소자를 위한 박막 캡슐화
CN101983469B (zh) 2008-04-02 2014-06-04 无穷动力解决方案股份有限公司 与能量采集关联的储能装置的无源过电压/欠电压控制和保护
KR20110058793A (ko) 2008-08-11 2011-06-01 인피니트 파워 솔루션스, 인크. 전자기 에너지를 수확하기 위한 일체형 컬렉터 표면을 갖는 에너지 디바이스 및 전자기 에너지를 수확하는 방법
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
WO2010030743A1 (en) 2008-09-12 2010-03-18 Infinite Power Solutions, Inc. Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof
WO2010042594A1 (en) 2008-10-08 2010-04-15 Infinite Power Solutions, Inc. Environmentally-powered wireless sensor module
KR101792287B1 (ko) 2009-09-01 2017-10-31 사푸라스트 리써치 엘엘씨 집적된 박막 배터리를 갖는 인쇄 회로 보드
US8894826B2 (en) * 2009-09-24 2014-11-25 Jesse A. Frantz Copper indium gallium selenide (CIGS) thin films with composition controlled by co-sputtering
US20110300432A1 (en) 2010-06-07 2011-12-08 Snyder Shawn W Rechargeable, High-Density Electrochemical Device
US8703233B2 (en) 2011-09-29 2014-04-22 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets by cold spray
EP3807913A1 (en) * 2018-06-18 2021-04-21 ABB Schweiz AG Method for producing a magnetic powder
CN116487171A (zh) * 2023-03-24 2023-07-25 宁波永久磁业有限公司 一种将重稀土靶材废料作为扩散源的磁体制备方法

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JPH0768612B2 (ja) * 1987-04-20 1995-07-26 日立金属株式会社 希土類金属―鉄族金属ターゲット用合金粉末、希土類金属―鉄族金属ターゲット、およびそれらの製造方法
JPS63274763A (ja) * 1987-04-30 1988-11-11 Sumitomo Metal Mining Co Ltd 光磁気記録用合金タ−ゲツト
US5710384A (en) * 1995-03-08 1998-01-20 Hitachi Metals, Ltd. Magneto-optical recording medium target and manufacture method of same
JP3098204B2 (ja) * 1997-03-07 2000-10-16 ティーディーケイ株式会社 光磁気記録用合金ターゲット、その製造方法およびその再生方法
JPH11189866A (ja) * 1997-12-26 1999-07-13 Mitsubishi Materials Corp 希土類を含有する再生ターゲット材とその再生方法
JPH11319752A (ja) * 1998-05-12 1999-11-24 Sumitomo Metal Mining Co Ltd 希土類元素含有物からの有価組成物の回収方法、及びこれにより得られた合金粉末

Also Published As

Publication number Publication date
JP2001089849A (ja) 2001-04-03
EP1087032A1 (en) 2001-03-28
US6409965B1 (en) 2002-06-25
KR20010030459A (ko) 2001-04-16
KR100714345B1 (ko) 2007-05-03

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