KR100714345B1 - 스퍼터링 표적 및 그의 제조 방법 - Google Patents
스퍼터링 표적 및 그의 제조 방법 Download PDFInfo
- Publication number
- KR100714345B1 KR100714345B1 KR1020000055414A KR20000055414A KR100714345B1 KR 100714345 B1 KR100714345 B1 KR 100714345B1 KR 1020000055414 A KR1020000055414 A KR 1020000055414A KR 20000055414 A KR20000055414 A KR 20000055414A KR 100714345 B1 KR100714345 B1 KR 100714345B1
- Authority
- KR
- South Korea
- Prior art keywords
- alloy powder
- rare earth
- target
- sputtering
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 169
- 239000000956 alloy Substances 0.000 claims abstract description 169
- 239000000843 powder Substances 0.000 claims abstract description 153
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 89
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 71
- 238000004544 sputter deposition Methods 0.000 claims abstract description 32
- 230000035699 permeability Effects 0.000 claims abstract description 31
- 238000002834 transmittance Methods 0.000 claims abstract description 27
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 12
- 229910052742 iron Inorganic materials 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 12
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 12
- 238000000227 grinding Methods 0.000 claims description 8
- 238000005507 spraying Methods 0.000 claims description 8
- 229910052771 Terbium Inorganic materials 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 230000002411 adverse Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 239000011812 mixed powder Substances 0.000 description 12
- 238000002474 experimental method Methods 0.000 description 9
- 238000001755 magnetron sputter deposition Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000012768 molten material Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 238000009689 gas atomisation Methods 0.000 description 5
- 238000005469 granulation Methods 0.000 description 5
- 230000003179 granulation Effects 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000007906 compression Methods 0.000 description 4
- 230000006835 compression Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000010299 mechanically pulverizing process Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26713699A JP4240679B2 (ja) | 1999-09-21 | 1999-09-21 | スパッタリング用ターゲットの製造方法 |
| JP99-267136 | 1999-09-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20010030459A KR20010030459A (ko) | 2001-04-16 |
| KR100714345B1 true KR100714345B1 (ko) | 2007-05-03 |
Family
ID=17440590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020000055414A Expired - Lifetime KR100714345B1 (ko) | 1999-09-21 | 2000-09-21 | 스퍼터링 표적 및 그의 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6409965B1 (enExample) |
| EP (1) | EP1087032A1 (enExample) |
| JP (1) | JP4240679B2 (enExample) |
| KR (1) | KR100714345B1 (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6506289B2 (en) | 2000-08-07 | 2003-01-14 | Symmorphix, Inc. | Planar optical devices and methods for their manufacture |
| US20030002043A1 (en) * | 2001-04-10 | 2003-01-02 | Kla-Tencor Corporation | Periodic patterns and technique to control misalignment |
| US7469558B2 (en) | 2001-07-10 | 2008-12-30 | Springworks, Llc | As-deposited planar optical waveguides with low scattering loss and methods for their manufacture |
| JP2005508444A (ja) * | 2001-09-17 | 2005-03-31 | ヘラエウス インコーポレーテッド | 使用済みスパッタターゲットの再生 |
| US7404877B2 (en) | 2001-11-09 | 2008-07-29 | Springworks, Llc | Low temperature zirconia based thermal barrier layer by PVD |
| US7378356B2 (en) | 2002-03-16 | 2008-05-27 | Springworks, Llc | Biased pulse DC reactive sputtering of oxide films |
| US6884327B2 (en) | 2002-03-16 | 2005-04-26 | Tao Pan | Mode size converter for a planar waveguide |
| US8445130B2 (en) | 2002-08-09 | 2013-05-21 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
| US8431264B2 (en) | 2002-08-09 | 2013-04-30 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
| US9793523B2 (en) | 2002-08-09 | 2017-10-17 | Sapurast Research Llc | Electrochemical apparatus with barrier layer protected substrate |
| US8394522B2 (en) | 2002-08-09 | 2013-03-12 | Infinite Power Solutions, Inc. | Robust metal film encapsulation |
| US8236443B2 (en) | 2002-08-09 | 2012-08-07 | Infinite Power Solutions, Inc. | Metal film encapsulation |
| US8021778B2 (en) | 2002-08-09 | 2011-09-20 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
| US20070264564A1 (en) | 2006-03-16 | 2007-11-15 | Infinite Power Solutions, Inc. | Thin film battery on an integrated circuit or circuit board and method thereof |
| US8404376B2 (en) | 2002-08-09 | 2013-03-26 | Infinite Power Solutions, Inc. | Metal film encapsulation |
| US7826702B2 (en) | 2002-08-27 | 2010-11-02 | Springworks, Llc | Optically coupling into highly uniform waveguides |
| US6863862B2 (en) * | 2002-09-04 | 2005-03-08 | Philip Morris Usa Inc. | Methods for modifying oxygen content of atomized intermetallic aluminide powders and for forming articles from the modified powders |
| EP1597408B1 (en) | 2003-02-27 | 2012-12-05 | Symmorphix, Inc. | Method for forming dielectric barrier layers |
| US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
| US7238628B2 (en) | 2003-05-23 | 2007-07-03 | Symmorphix, Inc. | Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides |
| US7504008B2 (en) * | 2004-03-12 | 2009-03-17 | Applied Materials, Inc. | Refurbishment of sputtering targets |
| US7959769B2 (en) | 2004-12-08 | 2011-06-14 | Infinite Power Solutions, Inc. | Deposition of LiCoO2 |
| CN101931097B (zh) | 2004-12-08 | 2012-11-21 | 希莫菲克斯公司 | LiCoO2的沉积 |
| US7838133B2 (en) | 2005-09-02 | 2010-11-23 | Springworks, Llc | Deposition of perovskite and other compound ceramic films for dielectric applications |
| US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| US8647484B2 (en) * | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
| US8062708B2 (en) | 2006-09-29 | 2011-11-22 | Infinite Power Solutions, Inc. | Masking of and material constraint for depositing battery layers on flexible substrates |
| US20080078268A1 (en) | 2006-10-03 | 2008-04-03 | H.C. Starck Inc. | Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof |
| US8197781B2 (en) | 2006-11-07 | 2012-06-12 | Infinite Power Solutions, Inc. | Sputtering target of Li3PO4 and method for producing same |
| US20080145688A1 (en) | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
| US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
| US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
| US7901552B2 (en) | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
| US8268488B2 (en) | 2007-12-21 | 2012-09-18 | Infinite Power Solutions, Inc. | Thin film electrolyte for thin film batteries |
| JP5551612B2 (ja) | 2007-12-21 | 2014-07-16 | インフィニット パワー ソリューションズ, インコーポレイテッド | 電解質膜のための標的をスパッタリングする方法 |
| KR101606183B1 (ko) | 2008-01-11 | 2016-03-25 | 사푸라스트 리써치 엘엘씨 | 박막 배터리 및 기타 소자를 위한 박막 캡슐화 |
| US8350519B2 (en) | 2008-04-02 | 2013-01-08 | Infinite Power Solutions, Inc | Passive over/under voltage control and protection for energy storage devices associated with energy harvesting |
| US8906523B2 (en) | 2008-08-11 | 2014-12-09 | Infinite Power Solutions, Inc. | Energy device with integral collector surface for electromagnetic energy harvesting and method thereof |
| US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
| WO2010030743A1 (en) | 2008-09-12 | 2010-03-18 | Infinite Power Solutions, Inc. | Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof |
| WO2010042594A1 (en) | 2008-10-08 | 2010-04-15 | Infinite Power Solutions, Inc. | Environmentally-powered wireless sensor module |
| CN102576828B (zh) | 2009-09-01 | 2016-04-20 | 萨普拉斯特研究有限责任公司 | 具有集成薄膜电池的印刷电路板 |
| US8894826B2 (en) * | 2009-09-24 | 2014-11-25 | Jesse A. Frantz | Copper indium gallium selenide (CIGS) thin films with composition controlled by co-sputtering |
| US20110300432A1 (en) | 2010-06-07 | 2011-12-08 | Snyder Shawn W | Rechargeable, High-Density Electrochemical Device |
| US8734896B2 (en) | 2011-09-29 | 2014-05-27 | H.C. Starck Inc. | Methods of manufacturing high-strength large-area sputtering targets |
| EP3807913A1 (en) * | 2018-06-18 | 2021-04-21 | ABB Schweiz AG | Method for producing a magnetic powder |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5710384A (en) * | 1995-03-08 | 1998-01-20 | Hitachi Metals, Ltd. | Magneto-optical recording medium target and manufacture method of same |
| JPH11189866A (ja) * | 1997-12-26 | 1999-07-13 | Mitsubishi Materials Corp | 希土類を含有する再生ターゲット材とその再生方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0768612B2 (ja) * | 1987-04-20 | 1995-07-26 | 日立金属株式会社 | 希土類金属―鉄族金属ターゲット用合金粉末、希土類金属―鉄族金属ターゲット、およびそれらの製造方法 |
| JPS63274763A (ja) * | 1987-04-30 | 1988-11-11 | Sumitomo Metal Mining Co Ltd | 光磁気記録用合金タ−ゲツト |
| JP3098204B2 (ja) * | 1997-03-07 | 2000-10-16 | ティーディーケイ株式会社 | 光磁気記録用合金ターゲット、その製造方法およびその再生方法 |
| JPH11319752A (ja) * | 1998-05-12 | 1999-11-24 | Sumitomo Metal Mining Co Ltd | 希土類元素含有物からの有価組成物の回収方法、及びこれにより得られた合金粉末 |
-
1999
- 1999-09-21 JP JP26713699A patent/JP4240679B2/ja not_active Expired - Lifetime
-
2000
- 2000-09-20 EP EP00120582A patent/EP1087032A1/en not_active Withdrawn
- 2000-09-21 US US09/666,241 patent/US6409965B1/en not_active Expired - Lifetime
- 2000-09-21 KR KR1020000055414A patent/KR100714345B1/ko not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5710384A (en) * | 1995-03-08 | 1998-01-20 | Hitachi Metals, Ltd. | Magneto-optical recording medium target and manufacture method of same |
| JPH11189866A (ja) * | 1997-12-26 | 1999-07-13 | Mitsubishi Materials Corp | 希土類を含有する再生ターゲット材とその再生方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001089849A (ja) | 2001-04-03 |
| JP4240679B2 (ja) | 2009-03-18 |
| KR20010030459A (ko) | 2001-04-16 |
| EP1087032A1 (en) | 2001-03-28 |
| US6409965B1 (en) | 2002-06-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100714345B1 (ko) | 스퍼터링 표적 및 그의 제조 방법 | |
| EP0411591B2 (en) | Cold accumulating material | |
| KR101495899B1 (ko) | RFeB계 희토류 소결 자석 및 그 제조 방법 | |
| US4801340A (en) | Method for manufacturing permanent magnets | |
| EP0215168B1 (en) | Method for making rare-earth element containing permanent magnets | |
| US6071323A (en) | Alloy target, its fabrication, and regeneration processes | |
| US7670443B2 (en) | Magnetic alloy material and method of making the magnetic alloy material | |
| EP0411571B1 (en) | Rare earth permanent magnet powder, method for producing same and bonded magnet | |
| JP5348124B2 (ja) | R−Fe−B系希土類焼結磁石の製造方法およびその方法によって製造された希土類焼結磁石 | |
| HK1001347B (en) | Cold accumulating material and method of manufacturing the same | |
| JPH0768612B2 (ja) | 希土類金属―鉄族金属ターゲット用合金粉末、希土類金属―鉄族金属ターゲット、およびそれらの製造方法 | |
| EP2740551B1 (en) | Alloy flakes as starting material for rare earth sintered magnet | |
| KR20170093951A (ko) | 자성재 스퍼터링 타깃 및 그 제조 방법 | |
| KR0129795B1 (ko) | 광자기 기록 매체용 타겟 및 그 제조 방법 | |
| WO2003066922A1 (en) | Sinter magnet made from rare earth-iron-boron alloy powder for magnet | |
| US6648984B2 (en) | Rare earth magnet and method for manufacturing the same | |
| KR101683439B1 (ko) | 희토류를 함유하는 영구자석 분말 및 이의 제조 방법 | |
| JP3991660B2 (ja) | 鉄基永久磁石およびその製造方法 | |
| JP2004143595A (ja) | 希土類磁石用原料合金、その製造方法及び希土類磁石用合金粉末 | |
| JP7282274B2 (ja) | ネオジム鉄ホウ素永久磁石材料、その原料組成物、その製造方法 | |
| JPS59229461A (ja) | 高保磁力磁性合金粉末 | |
| JPH07201545A (ja) | 焼結磁石およびその製造方法 | |
| JP7648429B2 (ja) | スパッタリングターゲット部材、スパッタリングターゲット組立品、及び成膜方法 | |
| JPH07201623A (ja) | 焼結磁石およびその製造方法 | |
| JP2003138335A (ja) | 希土類焼結磁石の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20000921 |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20050916 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20000921 Comment text: Patent Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20060919 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20070307 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20070426 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20070427 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration | ||
| PR1001 | Payment of annual fee |
Payment date: 20100420 Start annual number: 4 End annual number: 4 |
|
| PR1001 | Payment of annual fee |
Payment date: 20110420 Start annual number: 5 End annual number: 5 |
|
| PR1001 | Payment of annual fee |
Payment date: 20120619 Start annual number: 6 End annual number: 6 |
|
| FPAY | Annual fee payment |
Payment date: 20130419 Year of fee payment: 7 |
|
| PR1001 | Payment of annual fee |
Payment date: 20130419 Start annual number: 7 End annual number: 7 |
|
| FPAY | Annual fee payment |
Payment date: 20140418 Year of fee payment: 8 |
|
| PR1001 | Payment of annual fee |
Payment date: 20140418 Start annual number: 8 End annual number: 8 |
|
| FPAY | Annual fee payment |
Payment date: 20150422 Year of fee payment: 9 |
|
| PR1001 | Payment of annual fee |
Payment date: 20150422 Start annual number: 9 End annual number: 9 |
|
| FPAY | Annual fee payment |
Payment date: 20180413 Year of fee payment: 12 |
|
| PR1001 | Payment of annual fee |
Payment date: 20180413 Start annual number: 12 End annual number: 12 |
|
| FPAY | Annual fee payment |
Payment date: 20190328 Year of fee payment: 13 |
|
| PR1001 | Payment of annual fee |
Payment date: 20190328 Start annual number: 13 End annual number: 13 |
|
| PR1001 | Payment of annual fee |
Payment date: 20200401 Start annual number: 14 End annual number: 14 |
|
| PC1801 | Expiration of term |
Termination date: 20210321 Termination category: Expiration of duration |