JP4239520B2 - 成膜装置およびその製造方法、並びにインジェクタ - Google Patents

成膜装置およびその製造方法、並びにインジェクタ Download PDF

Info

Publication number
JP4239520B2
JP4239520B2 JP2002240818A JP2002240818A JP4239520B2 JP 4239520 B2 JP4239520 B2 JP 4239520B2 JP 2002240818 A JP2002240818 A JP 2002240818A JP 2002240818 A JP2002240818 A JP 2002240818A JP 4239520 B2 JP4239520 B2 JP 4239520B2
Authority
JP
Japan
Prior art keywords
injector
source gas
film
branch pipes
branch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002240818A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004079904A (ja
JP2004079904A5 (https=
Inventor
啓修 成井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2002240818A priority Critical patent/JP4239520B2/ja
Publication of JP2004079904A publication Critical patent/JP2004079904A/ja
Publication of JP2004079904A5 publication Critical patent/JP2004079904A5/ja
Application granted granted Critical
Publication of JP4239520B2 publication Critical patent/JP4239520B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
JP2002240818A 2002-08-21 2002-08-21 成膜装置およびその製造方法、並びにインジェクタ Expired - Fee Related JP4239520B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002240818A JP4239520B2 (ja) 2002-08-21 2002-08-21 成膜装置およびその製造方法、並びにインジェクタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002240818A JP4239520B2 (ja) 2002-08-21 2002-08-21 成膜装置およびその製造方法、並びにインジェクタ

Publications (3)

Publication Number Publication Date
JP2004079904A JP2004079904A (ja) 2004-03-11
JP2004079904A5 JP2004079904A5 (https=) 2005-10-20
JP4239520B2 true JP4239520B2 (ja) 2009-03-18

Family

ID=32023502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002240818A Expired - Fee Related JP4239520B2 (ja) 2002-08-21 2002-08-21 成膜装置およびその製造方法、並びにインジェクタ

Country Status (1)

Country Link
JP (1) JP4239520B2 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5191656B2 (ja) * 2004-03-29 2013-05-08 忠弘 大見 成膜装置および成膜方法
JP5091678B2 (ja) 2005-09-06 2012-12-05 国立大学法人東北大学 成膜用材料の推定方法、解析方法、及び成膜方法
JP5568729B2 (ja) * 2005-09-06 2014-08-13 国立大学法人東北大学 成膜装置および成膜方法
WO2007045110A2 (en) * 2005-10-17 2007-04-26 Oc Oerlikon Balzers Ag Cleaning means for large area pecvd devices using a remote plasma source
JP2008038224A (ja) 2006-08-09 2008-02-21 Tokyo Electron Ltd 成膜装置、成膜システムおよび成膜方法
JP5203584B2 (ja) * 2006-08-09 2013-06-05 東京エレクトロン株式会社 成膜装置、成膜システムおよび成膜方法
WO2008066103A1 (en) 2006-11-29 2008-06-05 Tokyo Electron Limited Substrate processing apparatus
EP1970468B1 (de) * 2007-03-05 2009-07-15 Applied Materials, Inc. Beschichtungsanlage und Gasleitungssystem
KR101423556B1 (ko) 2008-02-11 2014-07-28 (주)소슬 가스 공급 장치 및 이를 구비하는 기판 처리 장치
DE112010001483T5 (de) 2009-04-03 2012-09-13 Tokyo Electron Limited Abscheidungskopf und Filmbildungsvorrichtung
US9540731B2 (en) * 2009-12-04 2017-01-10 Applied Materials, Inc. Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
JP5413305B2 (ja) * 2010-05-25 2014-02-12 信越半導体株式会社 エピタキシャル成長装置
JP5735226B2 (ja) * 2010-07-16 2015-06-17 株式会社アルバック 蒸着装置及び蒸着方法
JP5771372B2 (ja) * 2010-08-02 2015-08-26 株式会社アルバック プラズマ処理装置及び前処理方法
JP5618713B2 (ja) * 2010-09-02 2014-11-05 株式会社アルバック 薄膜形成装置及び薄膜形成方法
JP5685417B2 (ja) * 2010-11-05 2015-03-18 株式会社アルバック クリーニング装置及びクリーニング方法
JP5674434B2 (ja) * 2010-11-19 2015-02-25 株式会社アルバック 蒸着装置及び蒸着方法
CN101988185A (zh) * 2010-12-14 2011-03-23 无锡虹彩科技发展有限公司 镀膜源、真空镀膜装置及其镀膜工艺
JP2014057047A (ja) * 2012-08-10 2014-03-27 Tokyo Electron Ltd 基板処理装置及びガス供給装置
JP5862529B2 (ja) * 2012-09-25 2016-02-16 東京エレクトロン株式会社 基板処理装置及びガス供給装置
US10665460B2 (en) * 2016-09-05 2020-05-26 Shin-Etsu Handotai Co., Ltd. Vapor phase growth apparatus, method of manufacturing epitaxial wafer, and attachment for vapor phase growth apparatus
CN111957075A (zh) * 2020-09-17 2020-11-20 潍坊潍森纤维新材料有限公司 一种粘胶快速脱气泡系统及脱气泡方法
JP7486388B2 (ja) * 2020-09-17 2024-05-17 東京エレクトロン株式会社 ガス導入構造及び処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH687258A5 (de) * 1993-04-22 1996-10-31 Balzers Hochvakuum Gaseinlassanordnung.
JP3501930B2 (ja) * 1997-12-01 2004-03-02 株式会社ルネサステクノロジ プラズマ処理方法
JP2000256860A (ja) * 1999-03-08 2000-09-19 Micro System:Kk 有機金属気相成長装置用二重ゾーン反応器
JP2001115266A (ja) * 1999-10-19 2001-04-24 Sharp Corp プラズマプロセス装置
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor

Also Published As

Publication number Publication date
JP2004079904A (ja) 2004-03-11

Similar Documents

Publication Publication Date Title
JP4239520B2 (ja) 成膜装置およびその製造方法、並びにインジェクタ
CN101506561B (zh) 组合式气体分配盘装置
CN100336165C (zh) 用于半导体处理系统的注气装置
US20120222616A1 (en) Shower head assembly and thin film deposition apparatus comprising same
US9922805B2 (en) Plasma source for a plasma CVD apparatus and a manufacturing method of an article using the plasma source
TW200914148A (en) Diffuser plate with slit valve compensation
TW200837207A (en) Deposition apparatus, control apparatus of deposition apparatus, control method of deposition apparatus, an using method of deposition apparatus and outlet manufacturing method
KR100943560B1 (ko) 코팅 장치 및 가스 주입 시스템
CN104975271B (zh) 进气装置以及半导体加工设备
TW201732926A (zh) 晶圓處理設備中的化學物質控制特徵
CN106399973A (zh) 气体分配系统和处理腔室
JP2010541241A (ja) 蒸着のための供給装置
CN116334590A (zh) 反应腔室的进气机构、反应腔室及外延生长设备
JP2004079904A5 (https=)
CN117448954A (zh) 一种进气装置及半导体处理设备
TW201903848A (zh) 用來在半導體基材上形成膜層的方法與裝置及半導體基材
TW202045768A (zh) 循環式磊晶沉積系統及其氣體分流模組
CN114959650A (zh) 一种半导体装置
WO2025031141A1 (zh) 一种喷淋板、喷淋方法及处理装置
CN100336253C (zh) 用于燃料电池的级联式燃料进口歧管
TW201137941A (en) Epitaxial growth device, and method of manufacturing the same
KR101467195B1 (ko) 가스 분사기 및 이를 포함하는 박막 증착 장치
CN100423194C (zh) 等离子体表面加工设备的电极结构
JP4683334B2 (ja) 表面波励起プラズマ処理装置
JP2009533843A (ja) エピタキシャル膜形成中に使用するためのガスマニホールド

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20040317

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20040604

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050629

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050629

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20051117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061002

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061130

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080918

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081110

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081202

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081215

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120109

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120109

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees