JP4233314B2 - レジスト組成物および溶解制御剤 - Google Patents

レジスト組成物および溶解制御剤 Download PDF

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Publication number
JP4233314B2
JP4233314B2 JP2002349167A JP2002349167A JP4233314B2 JP 4233314 B2 JP4233314 B2 JP 4233314B2 JP 2002349167 A JP2002349167 A JP 2002349167A JP 2002349167 A JP2002349167 A JP 2002349167A JP 4233314 B2 JP4233314 B2 JP 4233314B2
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JP
Japan
Prior art keywords
group
resist composition
polymer compound
composition according
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002349167A
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English (en)
Japanese (ja)
Other versions
JP2004182796A (ja
Inventor
寿幸 緒方
浩太郎 遠藤
裕光 辻
正昭 吉田
英夫 羽田
亮一 高須
充 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP2002349167A priority Critical patent/JP4233314B2/ja
Priority to TW092130281A priority patent/TW200419309A/zh
Priority to PCT/JP2003/015247 priority patent/WO2004050725A1/en
Priority to KR1020047017510A priority patent/KR100629124B1/ko
Priority to US10/501,459 priority patent/US7326512B2/en
Priority to AU2003302653A priority patent/AU2003302653A1/en
Publication of JP2004182796A publication Critical patent/JP2004182796A/ja
Application granted granted Critical
Publication of JP4233314B2 publication Critical patent/JP4233314B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/22—Esters containing halogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002349167A 2002-11-29 2002-11-29 レジスト組成物および溶解制御剤 Expired - Fee Related JP4233314B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002349167A JP4233314B2 (ja) 2002-11-29 2002-11-29 レジスト組成物および溶解制御剤
TW092130281A TW200419309A (en) 2002-11-29 2003-10-30 Polymer compound, resist composition and dissolution inhibitor agent containing the polymer compound
PCT/JP2003/015247 WO2004050725A1 (en) 2002-11-29 2003-11-28 Polymer compound, resist composition and dissolution inhibitor agent containing the polymer compound
KR1020047017510A KR100629124B1 (ko) 2002-11-29 2003-11-28 고분자 화합물, 이러한 고분자 화합물을 함유하는레지스트 조성물 및 용해 제어제
US10/501,459 US7326512B2 (en) 2002-11-29 2003-11-28 Polymer compound, resist composition and dissolution inhibitor agent containing the polymer compound
AU2003302653A AU2003302653A1 (en) 2002-11-29 2003-11-28 Polymer compound, resist composition and dissolution inhibitor agent containing the polymer compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002349167A JP4233314B2 (ja) 2002-11-29 2002-11-29 レジスト組成物および溶解制御剤

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008291180A Division JP4987837B2 (ja) 2008-11-13 2008-11-13 高分子化合物

Publications (2)

Publication Number Publication Date
JP2004182796A JP2004182796A (ja) 2004-07-02
JP4233314B2 true JP4233314B2 (ja) 2009-03-04

Family

ID=32463017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002349167A Expired - Fee Related JP4233314B2 (ja) 2002-11-29 2002-11-29 レジスト組成物および溶解制御剤

Country Status (6)

Country Link
US (1) US7326512B2 (https=)
JP (1) JP4233314B2 (https=)
KR (1) KR100629124B1 (https=)
AU (1) AU2003302653A1 (https=)
TW (1) TW200419309A (https=)
WO (1) WO2004050725A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009041039A (ja) * 2008-11-13 2009-02-26 Tokyo Ohka Kogyo Co Ltd 高分子化合物

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US7488847B2 (en) 2002-12-11 2009-02-10 Asahi Glass Company, Limited Fluorinated adamantane and its derivatives
JP4534765B2 (ja) 2002-12-11 2010-09-01 旭硝子株式会社 フッ素化されたアダマンタン誘導体およびその製造方法
EP1597627A4 (en) * 2003-02-20 2008-01-09 Promerus Llc RESOLUTION SPEED MODULATORS FOR PHOTORESISTAL COMPOSITIONS
US7232641B2 (en) * 2003-10-08 2007-06-19 Shin-Etsu Chemical Co., Ltd. Polymerizable compound, polymer, positive-resist composition, and patterning process using the same
EP1757575A4 (en) * 2004-06-16 2008-05-07 Asahi Glass Co Ltd FLUORADAMANTANDERIVAT
WO2005123650A1 (ja) 2004-06-16 2005-12-29 Asahi Glass Company, Limited 新規なフッ素化されたアダマンタン誘導体
JP4191103B2 (ja) * 2004-07-02 2008-12-03 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP2006085081A (ja) * 2004-09-17 2006-03-30 Daikin Ind Ltd 微細パターン形成方法およびそれに用いるレジスト組成物
KR20080063351A (ko) * 2005-10-28 2008-07-03 아사히 가라스 가부시키가이샤 신규 플루오로아다만탄 유도체, 함불소 중합체, 및 제조방법
WO2007119803A1 (ja) * 2006-04-13 2007-10-25 Asahi Glass Company, Limited イマージョンリソグラフィー用レジスト材料
EP2009499A4 (en) * 2006-04-20 2010-11-17 Asahi Glass Co Ltd MATERIAL OF A RESISTANCE MEMBRANE FOR IMMERSION SLITHOGRAPHY
WO2007125829A1 (ja) * 2006-04-28 2007-11-08 Idemitsu Kosan Co., Ltd. 含フッ素アダマンタン誘導体、重合性基含有含フッ素アダマンタン誘導体、それを含有する樹脂組成物及び反射防止膜
JPWO2008007594A1 (ja) * 2006-07-11 2009-12-10 旭硝子株式会社 高度にフッ素化されたノルボルナン構造を有する含フッ素化合物、含フッ素重合体、および製造方法
JP4666190B2 (ja) * 2008-10-30 2011-04-06 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP5193121B2 (ja) 2009-04-17 2013-05-08 東京エレクトロン株式会社 レジスト塗布現像方法
JP5386236B2 (ja) 2009-06-01 2014-01-15 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP6065862B2 (ja) * 2013-04-10 2017-01-25 信越化学工業株式会社 パターン形成方法、レジスト組成物、高分子化合物及び単量体
US10274847B2 (en) 2017-09-19 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Humidity control in EUV lithography
CN112154162B (zh) * 2018-05-18 2022-07-26 Ａｇｃ株式会社 含氟聚合物的制造方法及含氟离子交换聚合物的制造方法
KR102810176B1 (ko) * 2023-05-23 2025-05-23 인하대학교 산학협력단 주쇄 절단형 고불소화 고분자 포토레지스트, 이의 제조방법 및 이의 용도

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US3776729A (en) * 1971-02-22 1973-12-04 Ibm Photosensitive dielectric composition and process of using the same
US5283148A (en) * 1992-09-18 1994-02-01 Minnesota Mining And Manufacturing Company Liquid toners for use with perfluorinated solvents
GB9400016D0 (en) * 1994-01-04 1994-03-02 Minnesota Mining & Mfg 2-Fluoroacrylate ester polymers and use thereof as optical materials
JP3766245B2 (ja) 1999-12-16 2006-04-12 株式会社ルネサステクノロジ パタン形成方法および半導体装置の製造方法
JP2001328964A (ja) 2000-05-19 2001-11-27 Tokyo Ohka Kogyo Co Ltd 新規多環式不飽和炭化水素誘導体及びその製造方法
JP2002040648A (ja) * 2000-07-28 2002-02-06 Sony Corp 露光方法
KR100582631B1 (ko) * 2000-12-04 2006-05-23 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 레지스트 재료 및 패턴 형성 방법
JP2002196495A (ja) * 2000-12-22 2002-07-12 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
US6730452B2 (en) * 2001-01-26 2004-05-04 International Business Machines Corporation Lithographic photoresist composition and process for its use
TWI300790B (en) * 2001-02-28 2008-09-11 Shinetsu Chemical Co Polymers, Resist Compositions and Patterning Process
JP3904064B2 (ja) * 2001-02-28 2007-04-11 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4524940B2 (ja) 2001-03-15 2010-08-18 住友化学株式会社 化学増幅型ポジ型レジスト組成物
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JP3912482B2 (ja) * 2001-03-30 2007-05-09 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
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JP4186051B2 (ja) * 2002-03-25 2008-11-26 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料及びパターン形成方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009041039A (ja) * 2008-11-13 2009-02-26 Tokyo Ohka Kogyo Co Ltd 高分子化合物

Also Published As

Publication number Publication date
US7326512B2 (en) 2008-02-05
TWI311235B (https=) 2009-06-21
KR100629124B1 (ko) 2006-09-27
JP2004182796A (ja) 2004-07-02
KR20040106428A (ko) 2004-12-17
TW200419309A (en) 2004-10-01
WO2004050725A1 (en) 2004-06-17
AU2003302653A1 (en) 2004-06-23
US20050130056A1 (en) 2005-06-16

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