JP4230160B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4230160B2
JP4230160B2 JP2002093645A JP2002093645A JP4230160B2 JP 4230160 B2 JP4230160 B2 JP 4230160B2 JP 2002093645 A JP2002093645 A JP 2002093645A JP 2002093645 A JP2002093645 A JP 2002093645A JP 4230160 B2 JP4230160 B2 JP 4230160B2
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Japan
Prior art keywords
film
silicon film
crystal structure
laser light
laser beam
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Expired - Fee Related
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JP2002093645A
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English (en)
Japanese (ja)
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JP2003173968A (ja
JP2003173968A5 (https=
Inventor
舜平 山崎
節男 中嶋
秀和 宮入
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002093645A priority Critical patent/JP4230160B2/ja
Publication of JP2003173968A publication Critical patent/JP2003173968A/ja
Publication of JP2003173968A5 publication Critical patent/JP2003173968A5/ja
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Publication of JP4230160B2 publication Critical patent/JP4230160B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2002093645A 2001-03-29 2002-03-29 半導体装置の作製方法 Expired - Fee Related JP4230160B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002093645A JP4230160B2 (ja) 2001-03-29 2002-03-29 半導体装置の作製方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2001097226 2001-03-29
JP2001-97226 2001-03-29
JP2001-133220 2001-04-27
JP2001133220 2001-04-27
JP2001-296087 2001-09-27
JP2001296087 2001-09-27
JP2002093645A JP4230160B2 (ja) 2001-03-29 2002-03-29 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008024149A Division JP4850858B2 (ja) 2001-03-29 2008-02-04 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003173968A JP2003173968A (ja) 2003-06-20
JP2003173968A5 JP2003173968A5 (https=) 2005-09-02
JP4230160B2 true JP4230160B2 (ja) 2009-02-25

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Family Applications (1)

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JP2002093645A Expired - Fee Related JP4230160B2 (ja) 2001-03-29 2002-03-29 半導体装置の作製方法

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JP (1) JP4230160B2 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4024508B2 (ja) * 2001-10-09 2007-12-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7348222B2 (en) * 2003-06-30 2008-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device
JP4817655B2 (ja) * 2003-12-25 2011-11-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7524713B2 (en) * 2005-11-09 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2007158311A (ja) * 2005-11-09 2007-06-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP5490393B2 (ja) 2007-10-10 2014-05-14 株式会社半導体エネルギー研究所 半導体基板の製造方法
JP5527956B2 (ja) 2007-10-10 2014-06-25 株式会社半導体エネルギー研究所 半導体基板の製造方法
US8003483B2 (en) 2008-03-18 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP5713603B2 (ja) * 2009-09-02 2015-05-07 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
KR20110114089A (ko) * 2010-04-12 2011-10-19 삼성모바일디스플레이주식회사 박막 트랜지스터, 이의 제조 방법 및 이를 포함하는 표시 장치
KR102462742B1 (ko) 2013-12-02 2022-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제조방법
JP6416140B2 (ja) * 2016-02-12 2018-10-31 信越化学工業株式会社 多結晶シリコン棒および多結晶シリコン棒の選別方法
JP7119350B2 (ja) * 2017-11-22 2022-08-17 富士電機株式会社 縦型ＧａＮ系半導体装置の製造方法および縦型ＧａＮ系半導体装置
JP7184703B2 (ja) * 2019-04-16 2022-12-06 Ｊｓｗアクティナシステム株式会社 レーザ処理装置

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Publication number Publication date
JP2003173968A (ja) 2003-06-20

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