JP4230160B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP4230160B2 JP4230160B2 JP2002093645A JP2002093645A JP4230160B2 JP 4230160 B2 JP4230160 B2 JP 4230160B2 JP 2002093645 A JP2002093645 A JP 2002093645A JP 2002093645 A JP2002093645 A JP 2002093645A JP 4230160 B2 JP4230160 B2 JP 4230160B2
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- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002093645A JP4230160B2 (ja) | 2001-03-29 | 2002-03-29 | 半導体装置の作製方法 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001097226 | 2001-03-29 | ||
| JP2001-97226 | 2001-03-29 | ||
| JP2001133220 | 2001-04-27 | ||
| JP2001-133220 | 2001-04-27 | ||
| JP2001-296087 | 2001-09-27 | ||
| JP2001296087 | 2001-09-27 | ||
| JP2002093645A JP4230160B2 (ja) | 2001-03-29 | 2002-03-29 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008024149A Division JP4850858B2 (ja) | 2001-03-29 | 2008-02-04 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003173968A JP2003173968A (ja) | 2003-06-20 |
| JP2003173968A5 JP2003173968A5 (enExample) | 2005-09-02 |
| JP4230160B2 true JP4230160B2 (ja) | 2009-02-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002093645A Expired - Fee Related JP4230160B2 (ja) | 2001-03-29 | 2002-03-29 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4230160B2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4024508B2 (ja) * | 2001-10-09 | 2007-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7348222B2 (en) * | 2003-06-30 | 2008-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device |
| JP4817655B2 (ja) * | 2003-12-25 | 2011-11-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2007158311A (ja) * | 2005-11-09 | 2007-06-21 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US7524713B2 (en) * | 2005-11-09 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP5490393B2 (ja) | 2007-10-10 | 2014-05-14 | 株式会社半導体エネルギー研究所 | 半導体基板の製造方法 |
| JP5527956B2 (ja) | 2007-10-10 | 2014-06-25 | 株式会社半導体エネルギー研究所 | 半導体基板の製造方法 |
| US8003483B2 (en) | 2008-03-18 | 2011-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
| JP5713603B2 (ja) * | 2009-09-02 | 2015-05-07 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| KR20110114089A (ko) * | 2010-04-12 | 2011-10-19 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 이의 제조 방법 및 이를 포함하는 표시 장치 |
| CN106663391B (zh) * | 2013-12-02 | 2019-09-03 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
| JP6416140B2 (ja) * | 2016-02-12 | 2018-10-31 | 信越化学工業株式会社 | 多結晶シリコン棒および多結晶シリコン棒の選別方法 |
| JP7119350B2 (ja) * | 2017-11-22 | 2022-08-17 | 富士電機株式会社 | 縦型ＧａＮ系半導体装置の製造方法および縦型ＧａＮ系半導体装置 |
| JP7184703B2 (ja) * | 2019-04-16 | 2022-12-06 | Ｊｓｗアクティナシステム株式会社 | レーザ処理装置 |
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