JP4223218B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP4223218B2
JP4223218B2 JP2002038053A JP2002038053A JP4223218B2 JP 4223218 B2 JP4223218 B2 JP 4223218B2 JP 2002038053 A JP2002038053 A JP 2002038053A JP 2002038053 A JP2002038053 A JP 2002038053A JP 4223218 B2 JP4223218 B2 JP 4223218B2
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JP
Japan
Prior art keywords
film
anode
insulating film
bank
organic compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002038053A
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English (en)
Japanese (ja)
Other versions
JP2002334790A (ja
JP2002334790A5 (https=
Inventor
裕和 山形
舜平 山崎
徹 高山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002038053A priority Critical patent/JP4223218B2/ja
Publication of JP2002334790A publication Critical patent/JP2002334790A/ja
Publication of JP2002334790A5 publication Critical patent/JP2002334790A5/ja
Application granted granted Critical
Publication of JP4223218B2 publication Critical patent/JP4223218B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP2002038053A 2001-02-19 2002-02-15 発光装置 Expired - Fee Related JP4223218B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002038053A JP4223218B2 (ja) 2001-02-19 2002-02-15 発光装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-41195 2001-02-19
JP2001041195 2001-02-19
JP2002038053A JP4223218B2 (ja) 2001-02-19 2002-02-15 発光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005037682A Division JP2005135929A (ja) 2001-02-19 2005-02-15 発光装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002334790A JP2002334790A (ja) 2002-11-22
JP2002334790A5 JP2002334790A5 (https=) 2005-08-25
JP4223218B2 true JP4223218B2 (ja) 2009-02-12

Family

ID=26609595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002038053A Expired - Fee Related JP4223218B2 (ja) 2001-02-19 2002-02-15 発光装置

Country Status (1)

Country Link
JP (1) JP4223218B2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003332058A (ja) 2002-03-05 2003-11-21 Sanyo Electric Co Ltd エレクトロルミネッセンスパネルおよびその製造方法
US7291970B2 (en) 2002-09-11 2007-11-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting apparatus with improved bank structure
US7452257B2 (en) * 2002-12-27 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a display device
JP4265230B2 (ja) * 2003-01-30 2009-05-20 セイコーエプソン株式会社 電気光学表示装置及びその製造方法並びに電子機器
CA2419704A1 (en) * 2003-02-24 2004-08-24 Ignis Innovation Inc. Method of manufacturing a pixel with organic light-emitting diode
US7314785B2 (en) 2003-10-24 2008-01-01 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP4785339B2 (ja) * 2003-10-24 2011-10-05 株式会社半導体エネルギー研究所 表示装置の作製方法
JP4704006B2 (ja) * 2003-10-24 2011-06-15 株式会社半導体エネルギー研究所 表示装置及びその作製方法、並びに電子機器
US7619258B2 (en) * 2004-03-16 2009-11-17 Semiconductor Energy Laboratory Co., Ltd. Display device
JP4776949B2 (ja) * 2004-03-16 2011-09-21 株式会社半導体エネルギー研究所 発光装置
JP4809627B2 (ja) * 2004-05-21 2011-11-09 株式会社半導体エネルギー研究所 発光装置及びその作製方法
US7785947B2 (en) * 2005-04-28 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma
EP2544250B1 (en) * 2010-03-01 2020-01-08 Sharp Kabushiki Kaisha Process for production of nitride semiconductor element, nitride semiconductor light-emitting element, and light-emitting device
US9142598B2 (en) * 2011-06-24 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting panel, light-emitting device using the light-emitting panel, and method for manufacturing the light-emitting panel
CN120129416A (zh) * 2023-12-08 2025-06-10 合肥维信诺科技有限公司 显示面板及其制备方法和显示装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2682188B2 (ja) * 1990-03-09 1997-11-26 富士電機株式会社 電子写真用感光体の製造方法
JPH0487187A (ja) * 1990-07-27 1992-03-19 Toshiba Corp 有機エレクトロルミネッセンス素子
JPH04257826A (ja) * 1991-02-13 1992-09-14 Sharp Corp アクティブマトリクス基板の製造方法
JP3201029B2 (ja) * 1992-12-04 2001-08-20 富士ゼロックス株式会社 薄膜トランジスタ
JP3138098B2 (ja) * 1993-01-14 2001-02-26 日立化成工業株式会社 液晶基板の帯電防止方法
JP3067949B2 (ja) * 1994-06-15 2000-07-24 シャープ株式会社 電子装置および液晶表示装置
JP3594659B2 (ja) * 1994-09-08 2004-12-02 アルバック成膜株式会社 位相シフトフォトマスクブランクス製造方法、位相シフトフォトマスクブランクス、及び位相シフトフォトマスク
JPH08120105A (ja) * 1994-10-26 1996-05-14 Kanebo Ltd ポリビニルアルコール系多孔質シートの製造方法
JPH08288090A (ja) * 1995-04-12 1996-11-01 Hitachi Chem Co Ltd 液晶基板の帯電防止方法
JP3497283B2 (ja) * 1995-06-19 2004-02-16 松下電器産業株式会社 有機薄膜ｅｌ素子
JPH09199278A (ja) * 1996-01-18 1997-07-31 Toray Ind Inc 発光素子
US6569544B1 (en) * 1997-07-31 2003-05-27 Ecole Polytechnique Federale De Lausanne Electroluminescent device
KR100660384B1 (ko) * 1998-03-17 2006-12-21 세이코 엡슨 가부시키가이샤 표시장치의 제조방법
JPH11337973A (ja) * 1998-05-28 1999-12-10 Sharp Corp アクティブマトリクス基板の製造方法
JP2000077191A (ja) * 1998-08-31 2000-03-14 Sanyo Electric Co Ltd 表示装置
JP2000106279A (ja) * 1998-09-28 2000-04-11 Matsushita Electric Ind Co Ltd 有機薄膜ｅｌ素子
JP3850005B2 (ja) * 1999-03-03 2006-11-29 パイオニア株式会社 スイッチング素子及び有機エレクトロルミネッセンス素子表示装置
JP4423701B2 (ja) * 1999-06-07 2010-03-03 Ｔｄｋ株式会社 有機ｅｌ表示装置
JP4627822B2 (ja) * 1999-06-23 2011-02-09 株式会社半導体エネルギー研究所 表示装置

Also Published As

Publication number Publication date
JP2002334790A (ja) 2002-11-22

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