JP4219777B2 - リニアイメージセンサー - Google Patents
リニアイメージセンサー Download PDFInfo
- Publication number
- JP4219777B2 JP4219777B2 JP2003322001A JP2003322001A JP4219777B2 JP 4219777 B2 JP4219777 B2 JP 4219777B2 JP 2003322001 A JP2003322001 A JP 2003322001A JP 2003322001 A JP2003322001 A JP 2003322001A JP 4219777 B2 JP4219777 B2 JP 4219777B2
- Authority
- JP
- Japan
- Prior art keywords
- reference voltage
- image sensor
- terminal
- output
- signal line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000006243 chemical reaction Methods 0.000 claims description 14
- 238000010586 diagram Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- FDRHXXQUUFPDKT-IPWDFOCMSA-N (2s)-2-[(e)-3-(4-chlorophenyl)prop-2-enoyl]oxypropanoic acid Chemical compound OC(=O)[C@H](C)OC(=O)\C=C\C1=CC=C(Cl)C=C1 FDRHXXQUUFPDKT-IPWDFOCMSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/701—Line sensors
- H04N25/7013—Line sensors using abutted sensors forming a long line
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Facsimile Heads (AREA)
Description
電圧が異なるという出力電圧の段差をなくすことが出来る。
EFの電圧が与えられている。抵抗17の第2の端子はオペアンプ15の出力端子OUTに接続されている。
S1〜Sn 読み出しスイッチング素子
1 走査回路列
2、4 共通信号線
3 リセット及び制御回路
5 チップセレクトスイッチ素子
6 画像信号出力端子
7 クランプスイッチ素子
8 抵抗
9 基準電圧発生回路
10 基準電圧出力端子
11 第2のクランプスイッチ素子
12 コンデンサ
13 外部電源
15 オペアンプ
16 抵抗値R1の抵抗
17 抵抗値R2の抵抗
18 オペアンプ用基準電圧源
20 CLK共通線
21 オペアンプ
22、23 抵抗
24 容量
25 単位ブロック
Claims (9)
- 複数の光電変換素子の出力信号を直接共通信号線に出力するリニアイメージセンサーであって、
前記複数の光電変換素子を備えた光電変換素子回路列と、
前記出力信号を読み出す複数のスイッチ素子を備えたスイッチ素子回路列と、
前記スイッチ素子を駆動して前記出力信号を読み出すとともに前記複数の光電変換素子を初期状態に戻す制御回路と、
前記読み出された出力信号を画像信号出力端子に伝達する共通信号線と、
前記共通信号線に供給する基準電圧を発生する基準電圧発生手段と、
前記共通信号線と前記基準電圧発生手段との間に設けられた第1のリセットスイッチと、
前記共通信号線に接続された単一電源で動作する増幅回路と、を備え
前記基準電圧は、前記出力信号に前記増幅回路の単一電源の正の電圧方向にオフセットを持たせるような電圧であり、
前記制御回路は、前記スイッチ素子を動作させて前記光電変換素子から出力信号を前記共通信号線に読み出し、次に、前記第1のリセットスイッチを導通させて前記共通信号線に前記基準電圧を供給することを特徴とするリニアイメージセンサー。 - 前記共通信号線と前記画像信号出力端子との間にチップセレクトスイッチを設け、前記出力信号を前記画像信号出力端子に出力することを特徴とする請求項1記載のリニアイメージセンサー。
- 前記画像信号出力端子と前記基準電圧発生手段との間に第2のリセットスイッチを設けたことを特徴とする請求項1記載のリニアイメージセンサー。
- 単位ブロックは少なくとも前記光電変換素子回路列、前記スイッチ素子回路列、前記制御回路、前記共通信号線、前記第1のリセットスイッチ、前記画像信号出力端子及び基準電圧端子を含み、
前記単位ブロックを複数備え、各単位ブロックの前記基準電圧端子を共通に接続することを特徴とする請求項1記載のリニアイメージセンサー。 - 前記単位ブロックは、さらに前記基準電圧発生手段として基準電圧発生回路を備え、抵抗を介して前記基準電圧端子と接続したことを特徴とする請求項4記載のリニアイメージセンサー。
- 前記単位ブロックによりICを構成し、前記ICを直列状に配置したことを特長とする請求項5記載のリニアイメージセンサー。
- 前記基準電圧端子と接地電位との間に容量を形成したことを特徴とする請求項4記載のリニアイメージセンサー。
- 前記基準電圧端子と電源電位との間に容量を形成したことを特徴とする請求項4記載のリニアイメージセンサー。
- 前記基準電圧端子には前記ICの外部から基準電圧を供給することを特徴とする請求項6記載のリニアイメージセンサー。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003322001A JP4219777B2 (ja) | 2003-09-12 | 2003-09-12 | リニアイメージセンサー |
US10/935,612 US7091467B2 (en) | 2003-09-12 | 2004-09-07 | Image sensor |
CN200410083287.5A CN1595959B (zh) | 2003-09-12 | 2004-09-10 | 图象传感器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003322001A JP4219777B2 (ja) | 2003-09-12 | 2003-09-12 | リニアイメージセンサー |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005094148A JP2005094148A (ja) | 2005-04-07 |
JP4219777B2 true JP4219777B2 (ja) | 2009-02-04 |
Family
ID=34269975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003322001A Expired - Fee Related JP4219777B2 (ja) | 2003-09-12 | 2003-09-12 | リニアイメージセンサー |
Country Status (3)
Country | Link |
---|---|
US (1) | US7091467B2 (ja) |
JP (1) | JP4219777B2 (ja) |
CN (1) | CN1595959B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007173926A (ja) * | 2005-12-19 | 2007-07-05 | Seiko Instruments Inc | イメージセンサ |
JP4054839B1 (ja) * | 2007-03-02 | 2008-03-05 | キヤノン株式会社 | 光電変換装置およびそれを用いた撮像システム |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5784178A (en) * | 1996-03-06 | 1998-07-21 | Dyna Image Corporation | High performance contact image sensor |
JP3181874B2 (ja) * | 1998-02-02 | 2001-07-03 | セイコーインスツルメンツ株式会社 | イメージセンサー |
JP4047028B2 (ja) * | 2002-02-21 | 2008-02-13 | セイコーインスツル株式会社 | イメージセンサー |
-
2003
- 2003-09-12 JP JP2003322001A patent/JP4219777B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-07 US US10/935,612 patent/US7091467B2/en active Active
- 2004-09-10 CN CN200410083287.5A patent/CN1595959B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2005094148A (ja) | 2005-04-07 |
CN1595959A (zh) | 2005-03-16 |
US20050056770A1 (en) | 2005-03-17 |
CN1595959B (zh) | 2011-07-27 |
US7091467B2 (en) | 2006-08-15 |
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