CN1595959A - 图象传感器 - Google Patents
图象传感器 Download PDFInfo
- Publication number
- CN1595959A CN1595959A CN200410083287.5A CN200410083287A CN1595959A CN 1595959 A CN1595959 A CN 1595959A CN 200410083287 A CN200410083287 A CN 200410083287A CN 1595959 A CN1595959 A CN 1595959A
- Authority
- CN
- China
- Prior art keywords
- reference voltage
- image sensor
- output
- picture intelligence
- sensor according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/701—Line sensors
- H04N25/7013—Line sensors using abutted sensors forming a long line
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Facsimile Heads (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP322001/03 | 2003-09-12 | ||
JP2003322001A JP4219777B2 (ja) | 2003-09-12 | 2003-09-12 | リニアイメージセンサー |
JP322001/2003 | 2003-09-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1595959A true CN1595959A (zh) | 2005-03-16 |
CN1595959B CN1595959B (zh) | 2011-07-27 |
Family
ID=34269975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200410083287.5A Expired - Fee Related CN1595959B (zh) | 2003-09-12 | 2004-09-10 | 图象传感器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7091467B2 (zh) |
JP (1) | JP4219777B2 (zh) |
CN (1) | CN1595959B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1988605B (zh) * | 2005-12-19 | 2011-07-13 | 精工电子有限公司 | 图像传感器 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4054839B1 (ja) * | 2007-03-02 | 2008-03-05 | キヤノン株式会社 | 光電変換装置およびそれを用いた撮像システム |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5784178A (en) * | 1996-03-06 | 1998-07-21 | Dyna Image Corporation | High performance contact image sensor |
JP3181874B2 (ja) * | 1998-02-02 | 2001-07-03 | セイコーインスツルメンツ株式会社 | イメージセンサー |
JP4047028B2 (ja) * | 2002-02-21 | 2008-02-13 | セイコーインスツル株式会社 | イメージセンサー |
-
2003
- 2003-09-12 JP JP2003322001A patent/JP4219777B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-07 US US10/935,612 patent/US7091467B2/en not_active Expired - Lifetime
- 2004-09-10 CN CN200410083287.5A patent/CN1595959B/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1988605B (zh) * | 2005-12-19 | 2011-07-13 | 精工电子有限公司 | 图像传感器 |
Also Published As
Publication number | Publication date |
---|---|
US7091467B2 (en) | 2006-08-15 |
US20050056770A1 (en) | 2005-03-17 |
JP4219777B2 (ja) | 2009-02-04 |
JP2005094148A (ja) | 2005-04-07 |
CN1595959B (zh) | 2011-07-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160309 Address after: Chiba County, Japan Patentee after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba, Chiba, Japan Patentee before: Seiko Instruments Inc. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: DynaFine Semiconductor Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110727 Termination date: 20210910 |
|
CF01 | Termination of patent right due to non-payment of annual fee |