JP4213907B2 - リソグラフィーシステムのフォーカス精度を向上させるための方法およびシステム - Google Patents

リソグラフィーシステムのフォーカス精度を向上させるための方法およびシステム Download PDF

Info

Publication number
JP4213907B2
JP4213907B2 JP2002125047A JP2002125047A JP4213907B2 JP 4213907 B2 JP4213907 B2 JP 4213907B2 JP 2002125047 A JP2002125047 A JP 2002125047A JP 2002125047 A JP2002125047 A JP 2002125047A JP 4213907 B2 JP4213907 B2 JP 4213907B2
Authority
JP
Japan
Prior art keywords
control sensor
sensor
area
specific area
focus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002125047A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003031493A5 (enExample
JP2003031493A (ja
Inventor
エル. ネルソン マイケル
エル. クレウザー ジャスティン
エル. フィロシ ピーター
ジェイ. メイソン クリストファー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Publication of JP2003031493A publication Critical patent/JP2003031493A/ja
Publication of JP2003031493A5 publication Critical patent/JP2003031493A5/ja
Application granted granted Critical
Publication of JP4213907B2 publication Critical patent/JP4213907B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019Calibration
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • DTEXTILES; PAPER
    • D21PAPER-MAKING; PRODUCTION OF CELLULOSE
    • D21HPULP COMPOSITIONS; PREPARATION THEREOF NOT COVERED BY SUBCLASSES D21C OR D21D; IMPREGNATING OR COATING OF PAPER; TREATMENT OF FINISHED PAPER NOT COVERED BY CLASS B31 OR SUBCLASS D21G; PAPER NOT OTHERWISE PROVIDED FOR
    • D21H23/00Processes or apparatus for adding material to the pulp or to the paper
    • D21H23/02Processes or apparatus for adding material to the pulp or to the paper characterised by the manner in which substances are added
    • D21H23/22Addition to the formed paper
    • D21H23/32Addition to the formed paper by contacting paper with an excess of material, e.g. from a reservoir or in a manner necessitating removal of applied excess material from the paper
    • D21H23/34Knife or blade type coaters
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007Alignment other than original with workpiece
    • G03F9/7011Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026Focusing
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N21/00Selective content distribution, e.g. interactive television or video on demand [VOD]
    • H04N21/40Client devices specifically adapted for the reception of or interaction with content, e.g. set-top-box [STB]; Operations thereof
    • H04N21/41Structure of client; Structure of client peripherals
    • H04N21/414Specialised client platforms, e.g. receiver in car or embedded in a mobile appliance
    • H04N21/41415Specialised client platforms, e.g. receiver in car or embedded in a mobile appliance involving a public display, viewable by several users in a public space outside their home, e.g. movie theatre, information kiosk

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
JP2002125047A 2001-04-25 2002-04-25 リソグラフィーシステムのフォーカス精度を向上させるための方法およびシステム Expired - Fee Related JP4213907B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/841,187 US6859260B2 (en) 2001-04-25 2001-04-25 Method and system for improving focus accuracy in a lithography system
US09/841,187 2001-04-25

Publications (3)

Publication Number Publication Date
JP2003031493A JP2003031493A (ja) 2003-01-31
JP2003031493A5 JP2003031493A5 (enExample) 2005-09-29
JP4213907B2 true JP4213907B2 (ja) 2009-01-28

Family

ID=25284253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002125047A Expired - Fee Related JP4213907B2 (ja) 2001-04-25 2002-04-25 リソグラフィーシステムのフォーカス精度を向上させるための方法およびシステム

Country Status (5)

Country Link
US (3) US6859260B2 (enExample)
EP (1) EP1253471A3 (enExample)
JP (1) JP4213907B2 (enExample)
KR (1) KR100719975B1 (enExample)
TW (1) TW541593B (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6859260B2 (en) * 2001-04-25 2005-02-22 Asml Holding N.V. Method and system for improving focus accuracy in a lithography system
JP2003031474A (ja) * 2001-07-16 2003-01-31 Oki Electric Ind Co Ltd 露光装置および露光方法
US7289230B2 (en) 2002-02-06 2007-10-30 Cyberoptics Semiconductors, Inc. Wireless substrate-like sensor
AU2003266613A1 (en) * 2002-10-10 2004-05-04 Sony Corporation Method of producing optical disk-use original and method of producing optical disk
US6781103B1 (en) * 2003-04-02 2004-08-24 Candela Instruments Method of automatically focusing an optical beam on transparent or reflective thin film wafers or disks
US7068349B2 (en) * 2003-04-24 2006-06-27 Asml Netherlands B.V. Method of and preventing focal plane anomalies in the focal plane of a projection system
US20050134816A1 (en) * 2003-12-22 2005-06-23 Asml Netherlands B.V. Lithographic apparatus, method of exposing a substrate, method of measurement, device manufacturing method, and device manufactured thereby
US7126668B2 (en) * 2004-04-28 2006-10-24 Litel Instruments Apparatus and process for determination of dynamic scan field curvature
US7265364B2 (en) * 2004-06-10 2007-09-04 Asml Netherlands B.V. Level sensor for lithographic apparatus
US7835017B2 (en) * 2004-12-22 2010-11-16 Asml Netherlands B.V. Lithographic apparatus, method of exposing a substrate, method of measurement, device manufacturing method, and device manufactured thereby
US7504833B1 (en) * 2005-04-01 2009-03-17 Cypress Semiconductor Corporation Automatically balanced sensing device and method for multiple capacitive sensors
US7369214B2 (en) * 2005-08-11 2008-05-06 Asml Holding N.V. Lithographic apparatus and device manufacturing method utilizing a metrology system with sensors
US7502096B2 (en) * 2006-02-07 2009-03-10 Asml Netherlands B.V. Lithographic apparatus, calibration method, device manufacturing method and computer program product
US7893697B2 (en) 2006-02-21 2011-02-22 Cyberoptics Semiconductor, Inc. Capacitive distance sensing in semiconductor processing tools
CN101410690B (zh) * 2006-02-21 2011-11-23 赛博光学半导体公司 半导体加工工具中的电容性距离感测
JP5092298B2 (ja) * 2006-07-21 2012-12-05 富士通セミコンダクター株式会社 フォトマスク、焦点計測装置及び方法
KR101388304B1 (ko) 2006-09-29 2014-04-22 싸이버옵틱스 쎄미콘덕터 인코퍼레이티드 기판형 입자 센서
US8237919B2 (en) 2007-08-24 2012-08-07 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads
JPWO2009028157A1 (ja) * 2007-08-24 2010-11-25 株式会社ニコン 移動体駆動方法及び移動体駆動システム、並びにパターン形成方法及びパターン形成装置
US7940374B2 (en) * 2008-06-30 2011-05-10 Asml Holding N.V. Parallel process focus compensation
US20110261344A1 (en) * 2009-12-31 2011-10-27 Mapper Lithography Ip B.V. Exposure method
US10274838B2 (en) 2013-03-14 2019-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for performing lithography process in semiconductor device fabrication
US10576603B2 (en) 2014-04-22 2020-03-03 Kla-Tencor Corporation Patterned wafer geometry measurements for semiconductor process controls
WO2015199801A1 (en) * 2014-06-24 2015-12-30 Kla-Tencor Corporation Patterned wafer geometry measurements for semiconductor process controls
JP2018138990A (ja) 2016-12-08 2018-09-06 ウルトラテック インク 再構成ウェハーのリソグラフィ処理のための焦点制御のための走査方法
CN111183501B (zh) 2017-10-04 2022-11-25 Asml荷兰有限公司 干涉测量台定位装置
KR102693518B1 (ko) 2018-09-06 2024-08-08 삼성전자주식회사 Opc 방법, 및 그 opc 방법을 이용한 마스크 제조방법
TW202211074A (zh) * 2020-04-24 2022-03-16 美商科文特股份有限公司 用於在虛擬工廠環境中執行局部cdu建模和控制的系統及方法
KR102526522B1 (ko) * 2022-11-02 2023-04-27 (주)오로스테크놀로지 포커스를 제어하는 오버레이 계측 장치 및 방법과 이를 위한 프로그램

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61196532A (ja) * 1985-02-26 1986-08-30 Canon Inc 露光装置
US5883703A (en) 1996-02-08 1999-03-16 Megapanel Corporation Methods and apparatus for detecting and compensating for focus errors in a photolithography tool
AU5067898A (en) * 1996-11-28 1998-06-22 Nikon Corporation Aligner and method for exposure
US6208407B1 (en) * 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
EP1037117A3 (en) * 1999-03-08 2003-11-12 ASML Netherlands B.V. Off-axis levelling in lithographic projection apparatus
JP2001160530A (ja) * 1999-12-01 2001-06-12 Nikon Corp ステージ装置及び露光装置
US6859260B2 (en) * 2001-04-25 2005-02-22 Asml Holding N.V. Method and system for improving focus accuracy in a lithography system

Also Published As

Publication number Publication date
EP1253471A2 (en) 2002-10-30
KR100719975B1 (ko) 2007-05-21
US6859260B2 (en) 2005-02-22
US7053984B2 (en) 2006-05-30
US20020158185A1 (en) 2002-10-31
US20060187436A1 (en) 2006-08-24
US20050128456A1 (en) 2005-06-16
US7248336B2 (en) 2007-07-24
TW541593B (en) 2003-07-11
EP1253471A3 (en) 2005-11-02
KR20020092175A (ko) 2002-12-11
JP2003031493A (ja) 2003-01-31

Similar Documents

Publication Publication Date Title
JP4213907B2 (ja) リソグラフィーシステムのフォーカス精度を向上させるための方法およびシステム
US9709905B2 (en) System and method for dark field inspection
KR102269301B1 (ko) 리소그래피 방법 및 리소그래피 장치
JP5634864B2 (ja) リソグラフィック・プロセスに於ける、プロセス制御方法およびプロセス制御装置
US8440376B2 (en) Exposure determining method, method of manufacturing semiconductor device, and computer program product
KR102219780B1 (ko) 데이터 처리 장치를 갖는 리소그래피 장치
JP6812450B2 (ja) パターン形成プロセスを制御する方法、リソグラフィ装置、メトロロジ装置リソグラフィックセル、および関連するコンピュータプログラム
US7126668B2 (en) Apparatus and process for determination of dynamic scan field curvature
JP2018523152A (ja) リソグラフィ装置及び方法
WO2022199958A1 (en) Alignment method and associated alignment and lithographic apparatuses
CN114207527A (zh) 用于控制半导体制造过程的方法
JPH10223528A (ja) 投影露光装置及び位置合わせ方法
KR20230088255A (ko) 계측 장치, 리소그래피 장치, 및 물품 제조 방법
JP6245838B2 (ja) リソグラフィ装置、リソグラフィ方法、および物品の製造方法
TWI792538B (zh) 微影方法、微影製程與微影系統
CN108292111B (zh) 用于在光刻设备中处理衬底的方法和设备
TW202318098A (zh) 監測微影程序之方法及其相關設備
TWI788678B (zh) 度量衡中不可校正之誤差
JP2005322930A (ja) リソグラフィプロジェクタにおけるダイナミック用量適合を行う方法およびリソグラフィプロジェクタ
CN115516382A (zh) 用于产生衬底的表面的水平数据的系统和方法
KR102755839B1 (ko) 개선된 오버레이 오차 계측을 위한 유도 변위
JP2010114164A (ja) 露光方法及び露光装置、並びにリソグラフィシステム
JP2008112160A (ja) リソグラフィレチクル検査用のシステムおよび方法
TW202238247A (zh) 快速均匀性漂移修正
CN116762042A (zh) 快速均匀性漂移校正

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050422

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050422

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061124

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20061124

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20070803

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20070815

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070907

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080609

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080829

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081002

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081031

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111107

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

S802 Written request for registration of partial abandonment of right

Free format text: JAPANESE INTERMEDIATE CODE: R311802

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111107

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111107

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121107

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121107

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131107

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees