JP4208789B2 - Radiation detection apparatus, manufacturing method thereof, scintillator panel, and radiation detection system - Google Patents

Description

  The present invention relates to a scintillator panel, a radiation detection apparatus, a manufacturing method thereof, and a radiation detection system used for medical diagnostic equipment, non-destructive inspection equipment, and the like, and in particular, a scintillator panel, radiation detection equipment used for X-ray imaging, and the like The present invention relates to a radiation detection system. In the present specification, description will be made on the assumption that the category of radiation includes electromagnetic waves such as X-rays and γ-rays.

  Conventionally, an X-ray film system having a fluorescent screen having an X-ray phosphor layer provided therein and a double-side coating agent has been generally used for X-ray photography. However, recently, the image characteristics of a digital radiation detection apparatus having an X-ray phosphor layer and a two-dimensional photodetector are good, and since the data is digital data, the data is obtained by taking it into a networked computer system. Since there is an advantage that sharing of the digital radiation detection device has been achieved, research and development has been actively conducted on digital radiation detection devices, and various patent applications have been filed.

  Among these digital radiation detection apparatuses, as disclosed in Patent Document 1, as a highly sensitive and sharp apparatus, a plurality of photosensors and electric elements such as TFTs (Thin Film Transistors) are two-dimensionally arranged. A support plate (also referred to as a “scintillator panel”) having a phosphor layer formed on a support substrate for converting radiation into light that can be detected by the photoelectric conversion element on a photodetector comprising a photoelectric conversion element. A radiation detection apparatus (also referred to as “bonding type” or “indirect type”) is known.

  In addition, as disclosed in Patent Document 2 or 3, etc., radiation is photoelectrically converted on a photodetector including a photoelectric conversion element portion in which a plurality of photosensors and electrical elements such as TFTs are two-dimensionally arranged. There is also known a radiation detection apparatus (also referred to as “direct vapor deposition type” or “direct type”) in which a phosphor layer for direct conversion to light detectable by an element is formed.

FIG. 6 is a cross-sectional view showing a conventional direct vapor deposition type radiation detection apparatus. In FIG. 6, 101 is a glass substrate, 102 is a photoelectric conversion element portion comprising a photosensor and TFT using amorphous silicon, 103 is a wiring portion, 104 is an electrode extraction portion (electrode pad portion), 105 is silicon nitride or the like. A protective layer is shown, and the sensor panel 100 is configured by these elements 101 to 105. A phosphor layer 120 is formed on the sensor panel 100 so as to correspond to the photoelectric conversion element portion 102, and the phosphor layer 120 is covered with a phosphor protective layer 121.
JP 2000-9845 A JP-A-9-145845 JP-A-5-180945

  In these conventional examples, in the case of the direct vapor deposition type, as the phosphor underlayer formed between the phosphor layer 120 and the sensor panel 100, the rigidity of the sensor panel is formed on a protective layer such as silicon nitride that is an inorganic film. It is known to provide an organic film such as polyimide resin for the purpose of protection. Similarly, in the case of the bonded type, it is known to provide an organic film such as polyimide resin as the phosphor base layer formed between the phosphor layer and the support substrate. It is known that an organic film such as the polyimide resin is formed by a condensation polymerization reaction.

  However, an organic film made of a polyimide resin formed by a condensation polymerization reaction may have pinhole defects or protrusion defects due to adhesion of polymer molecules generated during the film formation process. This is because when polymerized polycondensation is started in the air during film formation, the polymerized molecules become nuclei and then accumulate on the substrate. It is to become. When such a pinhole defect or protrusion defect occurs in the protective film, there is a problem in that the phosphor layer formed thereon has a large number of defects. In particular, when the phosphor layer is made of an alkali halide phosphor having a columnar crystal structure formed by vapor deposition, such as cesium iodide doped with Tl, it is caused by pinhole defects or protrusion defects in the phosphor underlayer. As a result, abnormal growth portions called splash defects are formed, which may lead to a decrease in resolution due to non-uniformity of light emission luminance and a decrease in moisture resistance of the phosphor layer.

  The present invention has been made in consideration of such conventional circumstances, and suppresses pinhole defects and protrusion defects in the phosphor underlayer, thereby reducing the defects in the phosphor layer and providing high quality without image defects. A radiation detection apparatus is provided.

A radiation detection apparatus according to the present invention includes a base material, a light receiving unit that is disposed on the base material and includes a plurality of photoelectric conversion elements that convert light into an electrical signal, and a protective layer that is disposed on the light receiving unit. A sensor panel comprising: a phosphor underlayer disposed on the sensor panel; a phosphor layer disposed on the phosphor underlayer that converts radiation into light that can be sensed by a photoelectric conversion element; a radiation detecting device having the phosphor underlayer Ri Do an organic film formed by polyaddition reaction, the organic layer is characterized by comprising a polyurea or polyurethane.

In the radiation detection apparatus according to the present invention, the organic film may be formed from two kinds of reactive groups . Before SL phosphor underlayer, said formed by vacuum deposition on the sensor panel, the phosphor layer may be formed by vapor deposition on the phosphor underlayer. You may have the fluorescent substance protective layer which consists of hot-melt resin on the said fluorescent substance layer. The phosphor layer may have a columnar crystal structure.

  A radiation detection system according to the present invention includes any one of the above-described radiation detection apparatuses, a radiation source that generates the radiation, a signal processing unit that processes a signal from the radiation detection apparatus as an image, and a signal processing unit. A storage means for storing the signal and a display means for displaying the signal from the signal processing means are provided.

The scintillator panel according to the present invention includes a support member, a phosphor underlayer formed on the support member, a phosphor layer formed on the phosphor underlayer for converting radiation into light, and the phosphor in the scintillator panel and a protective layer covering the body layer, the phosphor underlayer Ri Do an organic film formed by polyaddition reaction, the organic layer is characterized by comprising a polyurea or polyurethane .

In the scintillator panel according to the present invention, the organic film may be formed from two kinds of reactive groups . Before Symbol supporting member includes a supporting substrate may have a reflective layer that reflects the converted light by the phosphor layer. The phosphor layer may have a columnar crystal structure.

  A radiation detection apparatus according to the present invention includes any one of the above scintillator panels, and a sensor panel having a plurality of photoelectric conversion elements that photoelectrically convert light converted by the scintillator panel.

  A radiation detection system according to the present invention includes the radiation detection device, a radiation source that generates the radiation, a signal processing unit that processes a signal from the radiation detection device as an image, and a signal from the signal processing unit. A storage means for storing and a display means for displaying a signal from the signal processing means are provided.

The method for manufacturing a radiation detection apparatus according to the present invention includes a sensor panel, a phosphor base layer formed on the sensor panel, and a photoelectric conversion element capable of sensing radiation formed on the phosphor base layer. a manufacturing method of a radiation detecting device having a phosphor layer which converts the light, and have a step of forming the phosphor underlying layer made of an organic film by polyaddition reaction to the sensor panel, the organic layer Is made of polyurea or polyurethane .

  In the method for manufacturing a radiation detection apparatus according to the present invention, the step of forming the phosphor base layer is performed by a vapor deposition polymerization method using monomers of two kinds of polymer materials.

  According to the present invention, by forming the phosphor underlayer with an organic film formed by a polyaddition reaction, it is possible to obtain an underlayer free from protrusion defects due to pinhole defects, impurities, etc., and formed on this underlayer. The number of defects in the phosphor layer can be reduced, and a high-quality radiation detection apparatus free from image defects can be obtained.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
(First embodiment)
The present embodiment is applied to a direct vapor deposition type radiation detection apparatus.

  FIG. 1 is a cross-sectional view showing a main part of the radiation detection apparatus of the present embodiment. FIG. 2 is a cross-sectional view including the entire sensor panel of the radiation detection apparatus of the present embodiment.

  In the radiation detection apparatus shown in FIGS. 1 and 2, reference numeral 101 denotes a glass substrate (base material), and 102 corresponds to a pixel formed on the glass substrate 101 in a two-dimensional shape and composed of a photosensor and TFT using amorphous silicon. A photoelectric conversion element unit 103 is formed on the glass substrate 101 and connected to the photoelectric conversion element unit 102, 104 is an electrode extraction unit (electrode pad unit) connected to the wiring unit 103, and 105 is a photoelectric conversion element A sensor protective layer made of silicon nitride or the like that covers the portion 102 and the wiring portion 103 is shown. A sensor panel (also referred to as “two-dimensional photodetector”, “photoelectric conversion panel”, etc.) 100 is formed by these elements 101 to 105. Composed. A phosphor underlayer (addition polymerization film) 1 formed by a polyaddition reaction is further formed on the sensor protective layer 105, and a phosphor layer 2 made of columnar crystal CsI: Tl is formed on the phosphor underlayer 1. The phosphor layer 2 is covered with the phosphor protective layer 3.

  In the radiation detection apparatus, a terminal portion (not shown) of the flexible circuit board on which the detection integrated circuit IC is mounted is connected to the electrode extraction portion 104 of the sensor panel 100 via an anisotropic conductive adhesive (connection portion). Pasted together.

  The phosphor underlayer 1 is an organic film formed by addition polymerization, and an organic film formed by vacuum film formation is particularly desirable because the film quality is stable and there are few defects.

  For example, a polyurea film formed by a vapor deposition polymerization method in which a film is formed by a polyaddition reaction of monomer A and monomer B is particularly suitable. In this case, the monomer A is 4,4′-diaminodiphenyl ether, 4,4′-diamino-3,3′-dimethyldiphenylmethane, 4,4′-diaminodiphenylmethane, and the monomer B is 4,4′-diphenylmethane. Examples thereof include diisocyanate and 3,3′-diaminodiphenyl-4,4′-diisocyanate. By heating and evaporating these two monomers A and B, respectively, in a vacuum, a polyurea film can be formed by a polyaddition reaction on the substrate. Examples of the material obtained by such a polyaddition reaction include polyurethane produced by a polyaddition reaction of a hydroquinone component and diphenylmethane diisocyanate.

  According to this embodiment, since an organic film formed by a polyaddition reaction, particularly polyurea, is used as a phosphor underlayer, pinhole defects and polymer molecules generated during the film formation process are caused by the polyaddition reaction. It is possible to obtain a film free from protrusion defects due to the adhesion of. Thereby, there are few image defects and it is possible to improve reliability.

  The phosphor layer 2 used in the present invention converts radiation into light having a wavelength that can be sensed by the photoelectric conversion element 2, and is preferably a phosphor having a columnar crystal structure. In the phosphor having a columnar crystal structure, generated light propagates in the columnar crystal, so that light scattering is small and the resolution can be improved. As the material, for example, CsI: Tl, CsI: Na, CsBr: Tl is used. For example, CsI: Tl can be formed by simultaneously depositing CsI and TlI.

  As the phosphor protective layer 3 used in the present invention, it is preferable to use an organic film made of polyparaxylylene. In addition, it is more preferable to use a hot melt resin that is an adhesive resin that does not contain water or a solvent and is solid at room temperature and made of a 100% nonvolatile thermoplastic material. As the hot-melt resin material, polyolefin-based, polyester-based, polyamide-based resins, and the like can be used.

  The hot melt resin used as the phosphor protective layer 3 is defined as an adhesive resin that does not contain water or a solvent, is solid at room temperature, and is made of a 100% non-volatile thermoplastic material (Thomas.p. Flaganan, Adhesive Age, 9, No. 3, 28 (1996)). The hot melt resin melts when the resin temperature rises and solidifies when the resin temperature falls. The hot melt resin has adhesiveness to other organic materials and inorganic materials in a heated and melted state, and is in a solid state at room temperature and has no adhesiveness. In addition, since the hot melt resin does not contain a polar solvent, a solvent, and water, the phosphor layer 2 can be formed even when it is in contact with the phosphor layer 2 (for example, a phosphor layer having a columnar crystal structure made of an alkali halide). Since it does not dissolve, it can be used as the phosphor protective layer 3. The hot melt resin is different from a solvent volatile curable adhesive resin formed by dissolving a thermoplastic resin in a solvent and using a solvent coating method. It is also different from a chemically reactive adhesive resin formed by a chemical reaction typified by epoxy.

Hot-melt resin materials are classified according to the type of base polymer (base material) that is the main component, and polyolefin-based, polyester-based, polyamide-based, and the like can be used. It is important for the phosphor protective layer 3 to have high moisture resistance and high light transmittance to transmit visible light generated from the phosphor. Polyolefin resins and polyester resins are preferred as hot melt resins that satisfy the moisture resistance required for the phosphor protective layer 3. It is particularly preferable to use a polyolefin resin having a low moisture absorption rate. A polyolefin resin is preferable as the resin having high light transmittance. Therefore, a hot melt resin based on a polyolefin resin is more preferable as the phosphor protective layer 3. The polyolefin resin is composed of ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, ethylene-methacrylic acid copolymer, ethylene-methacrylic acid ester copolymer, and ionomer resin. It is preferable to contain at least one selected as a main component. Hirodine 7544 (manufactured by Hirodine Industries) as a hot melt resin mainly composed of an ethylene vinyl acetate copolymer, O-4121 (manufactured by Kurashiki Boseki) as a hot melt resin mainly composed of an ethylene-acrylic acid ester copolymer, ethylene -W-4110 (manufactured by Kurashiki Boseki) as a hot melt resin mainly composed of a methacrylic acid ester copolymer, and H-2500 (manufactured by Kurashiki Boseki) as a hot melt resin mainly composed of an ethylene-acrylic acid ester copolymer. P-2200 (manufactured by Kurashiki Boseki) as a hot melt resin mainly composed of an ethylene-acrylic acid copolymer, and Z-2 (manufactured by Kurashiki Boseki) as a hot melt resin mainly composed of an ethylene-acrylic acid ester copolymer ) Etc. can be used.
(Second Embodiment)
The present embodiment is applied to a bonding type radiation detection apparatus.

  FIG. 3 is a cross-sectional view showing a main part of the radiation detection apparatus of the present embodiment. FIG. 4 is a cross-sectional view including the entire sensor panel of the radiation detection apparatus of the present embodiment.

  In the radiation detection apparatus shown in FIG. 4, 101 is a glass substrate, 102 is a photoelectric conversion element unit corresponding to a pixel formed by two-dimensionally on a glass substrate 101 and using a photosensor and TFT using amorphous silicon, and 103 A wiring portion formed on the glass substrate 101 and connected to the photoelectric conversion element portion 102, 104 an electrode extraction portion (electrode pad portion) connected to the wiring portion 103, and 105 a photoelectric conversion element portion 102 and the wiring portion 103. A sensor protective layer made of silicon nitride or the like is shown, and a sensor panel 100 is constituted by these elements 101 to 105.

  In addition to the sensor panel 100, as shown in FIG. 3, a phosphor protective layer 5 and a reflection layer 6 are formed on a phosphor support substrate 4, and a phosphor underlayer (by a polyaddition reaction) ( After the addition polymerization film 1 is formed, a phosphor layer 2 made of CsI: Tl of columnar crystals is formed. The reflective layer protective layer 5 may be formed according to the necessity, and the reflective layer 6 is directly formed on the phosphor support substrate 4 or the support substrate 4 also serves as the reflective layer 6. Also good. A scintillator panel 110 is formed by forming the phosphor protective layer 3 on the phosphor layer 2.

As shown in FIG. 4, in the scintillator panel 110, the phosphor layer is bonded to the photoelectric conversion element portion 102 of the sensor panel 100 with the adhesive layer 7 through the phosphor protective layer 3. A sealing layer 7 for moisture proofing and rigid support is provided at the end of the bonded scintillator panel as necessary.

  In the radiation detection apparatus, the terminal portion (not shown) of the flexible circuit board on which the detection integrated circuit IC is mounted has an anisotropic conductive adhesive (connection portion) on the electrode extraction portion 104 of the sensor panel 100. Are pasted together.

  The phosphor underlayer 1 is an organic film formed by addition polymerization, and an organic film formed by vacuum film formation is particularly desirable because the film quality is stable and there are few defects.

  For example, a polyurea film in which a film is formed by a vapor deposition polymerization method in which a film is formed by a polyaddition reaction of monomer A and monomer B is particularly suitable. In this case, the monomer A is 4,4′-diaminodiphenyl ether, 4,4′-diamino-3,3′-dimethyldiphenylmethane, 4,4′-diaminodiphenylmethane, and the monomer B is 4,4′-diphenylmethane. Examples thereof include diisocyanate and 3,3′-diaminodiphenyl-4,4′-diisocyanate. By heating and evaporating these two monomers A and B in a vacuum, a polyurea film can be formed by a polyaddition reaction on the substrate. Examples of the material obtained by such a polyaddition reaction include polyurethane produced by a polyaddition reaction of a hydroquinone component and diphenylmethane diisocyanate.

  According to this embodiment, since an organic film formed by a polyaddition reaction, particularly polyurea, is used as a phosphor underlayer, pinhole defects and polymer molecules generated during the film formation process are caused by the polyaddition reaction. It is possible to obtain a film free from protrusion defects due to the adhesion of. Thereby, there are few image defects and it is possible to improve reliability.

  Next, examples of the radiation detection apparatuses of the first and second embodiments and comparative examples thereof will be described.

  This example corresponds to the first embodiment.

  As shown in FIGS. 1 and 2, the sensor panel 100 was formed, and the phosphor base layer 1 was formed on the sensor panel 100. Specifically, a photoelectric conversion element portion (photodetection element (pixel)) 102 including a photosensor and a TFT and a wiring portion 103 are formed on a semiconductor thin film made of amorphous silicon on a glass substrate 101, and a wiring portion 103 is formed thereon. A sensor protective layer 105 made of SiNX and an electrode extraction portion 104 were formed. Furthermore, as the phosphor underlayer 1 formed by the polyaddition reaction, a polyurea film having a thickness of 4 μm was formed by vapor deposition polymerization using two monomers of diphenylmethane diisocyanate and diaminodiphenylmethane.

  Next, the phosphor layer 2 made of CsI: Tl was obtained by vapor deposition at a position corresponding to the pixel region of the phosphor base layer 1 of the sensor panel 100. On the entire surface of the sensor panel 100 on which the phosphor layer 2 is formed, a 50 μm thick polyparaxylylene organic film formed by thermal CVD, a 20 μm thick Al reflective layer, and a 50 μm thick PET ( The phosphor protective layer 3 including the reflective layer protective layer made of polyethylene terephthalate) was formed to obtain a sensor panel 100 in which the phosphor layer 2 was directly formed.

  Furthermore, the terminal part of the flexible circuit board was thermocompression bonded to the electrode extraction part 104 on the sensor panel 100 via an anisotropic conductive adhesive to obtain a radiation detection apparatus.

  When the occurrence of defects in the phosphor layer was examined for the obtained radiation detection apparatus, none occurred due to the defects in the phosphor underlayer. Further, in order to investigate the durability, it was left for 1000 hours in an environment of a temperature of 60 degrees and a humidity of 90%. After leaving, the radiation detection apparatus was irradiated with X-rays to acquire an image, and the presence or absence of an image defect due to peeling or breakage of the phosphor layer was observed from the obtained image. No occurrence of the image defect was detected.

  This example corresponds to the second embodiment.

  As shown in FIGS. 3 and 4, the scintillator panel 110 and the sensor panel 100 were individually formed, and then the scintillator panel 110 was bonded onto the sensor panel 100.

  Specifically, as the sensor panel 100, a photoelectric conversion element portion (photodetection element (pixel)) 102 and a wiring portion 103 made of a photosensor and a TFT are formed on a semiconductor thin film made of amorphous silicon on a glass substrate 101. Then, a sensor protective film 105 made of SiNX and an electrode extraction portion 104 were formed thereon.

  In addition, as the scintillator panel 110, the reflective layer protective layer 5, the reflective layer 6, and the phosphor base layer 1 were sequentially laminated on an amorphous carbon substrate having a thickness of 1 mm to be the phosphor support substrate 4. A polyurea film having a thickness of 4 μm was formed on the reflective layer protective layer 5 and the phosphor base layer 1 by vapor deposition polymerization using two monomers of diaminodiphenyl diisocyanate and diaminodiphenyl ether. The reflective layer 6 was vapor-deposited with a thickness of 3000 mm (300 nm). Next, cesium iodide (CsI) was deposited on the phosphor base layer 1 of the scintillator panel 110 to obtain a phosphor layer 2. Further, as the phosphor protective layer 3, an organic film made of polyparaxylylene was formed to have a thickness of 15 μm by a thermal CVD method to obtain a scintillator panel 110.

  Next, the scintillator panel 110 is bonded to the pixel region of the sensor panel 110 via an acrylic pressure-sensitive adhesive serving as the adhesive layer 6, and the anisotropic conductive adhesive 3 is attached to the electrode extraction portion 104 on the sensor panel 100. The terminal part (not shown) of the flexible circuit board was thermocompression bonded via a wire to obtain a radiation detection apparatus.

  When the occurrence of defects in the phosphor layer was examined for the obtained radiation detection apparatus, none was generated due to defects in the phosphor base layer 1. Further, in order to investigate the durability, it was left for 1000 hours in an environment of a temperature of 60 degrees and a humidity of 90%. After leaving, the radiation detection apparatus was irradiated with X-rays to acquire an image, and the presence or absence of an image defect due to peeling or breakage of the phosphor layer was observed from the obtained image. No occurrence of the image defect was detected.

[Comparative Example 1]
A sensor panel 100 is formed under the same conditions as in Example 1 (see FIGS. 1 and 2), and two monomers of pyromellitic anhydride and oxydianiline are formed on the sensor panel 100 as the phosphor underlayer 1. A polyimide film by a condensation polymerization reaction having a thickness of 4 μm was formed by the vapor deposition polymerization method used.

  Next, cesium iodide (CsI) was deposited on the sensor panel 100 at a position corresponding to the pixel region of the phosphor base layer 1 to obtain a phosphor layer 2. Next, a phosphor protective layer 3 made of 50 μm thick acrylic adhesive, 20 μm thick Al, and 50 μm thick PET is formed on the entire surface of the sensor panel 100 on which the phosphor layer 2 is formed. 2 was obtained. Furthermore, the terminal part (not shown) of a flexible circuit board was thermocompression bonded to the electrode extraction part 104 on the sensor panel 100 via the anisotropic conductive adhesive 3 to obtain a radiation detection apparatus.

  When the occurrence of defects in the phosphor layer was examined with respect to the obtained radiation detection apparatus, defects in the phosphor layer occurred due to the presence of protrusion-like defects in the phosphor underlayer 1. It was confirmed that

[Comparative Example 2]
The scintillator panel 110 was formed under the same conditions as in Example 2 (see FIGS. 3 and 4). Among them, as the phosphor underlayer 1, a polyimide film by a condensation polymerization reaction having a thickness of 4 μm was formed by vapor deposition polymerization using two monomers of pyromellitic anhydride and oxydianiline.

  Next, the sensor panel 100 and the scintillator panel 110 were bonded together under the same conditions as in Example 2 to obtain a radiation detection apparatus.

  When the occurrence of defects in the phosphor layer was examined with respect to the obtained radiation detection apparatus, defects in the phosphor layer occurred due to the presence of protrusion-like defects in the phosphor underlayer 1. It was confirmed that In order to investigate the durability, it was left for 1000 hours in an environment of a temperature of 60 degrees and a humidity of 90%. An image is obtained by irradiating the radiation detection apparatus with the X-ray after being left, and the presence or absence of an image defect due to peeling or breakage of the phosphor layer is observed from the obtained image. From the pinhole defect of the phosphor underlayer 1 It was confirmed that image defects occurred due to corrosion of the reflective layer 6 below.

  FIG. 5 is a conceptual diagram showing a preferred embodiment of the radiation detection system according to the present invention. The radiation detection system shown in FIG. 5 uses the radiation detection apparatus of the present invention.

  In the radiation detection system shown in FIG. 5, X-rays 6060 generated by an X-ray tube (radiation source) 6050 pass through the chest 6062 of the patient or subject 6061 and enter the radiation detection device 6040. This incident X-ray includes information inside the body of the patient 6061. Corresponding to the incidence of X-rays, the phosphor of the radiation detection apparatus 6040 emits light and photoelectrically converts it to obtain electrical information. This information is converted into digital data, subjected to image processing by an image processor 6070, and can be observed on a display (display means) 6080 in the control room.

  In addition, this information can be transferred to a remote place by transmission means such as a telephone line 6090, and can be displayed on a display 6081 such as a doctor room in another place or stored in a recording medium such as an optical disc, and can be diagnosed by a remote doctor. It is also possible to do. It can also be recorded on the film 6110 by the film processor 6100.

  As described above, the present invention can be applied to medical X-ray sensors and the like, but is also effective when applied to other uses such as nondestructive inspection.

It is sectional drawing which shows the principal part structure of the radiation detection apparatus which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows the whole structure of the radiation detection apparatus which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows the principal part structure of the radiation detection apparatus which concerns on the 2nd Embodiment of this invention. It is sectional drawing which shows the whole structure of the radiation detection apparatus which concerns on the 2nd Embodiment of this invention. It is a conceptual diagram which shows the structure of one Example of the radiation detection system using the radiation detection apparatus which concerns on this invention. It is sectional drawing which shows the radiation detection apparatus of a prior art example.

Explanation of symbols

1 Phosphor base layer (addition polymerization film protective layer)
2 phosphor layer 3 phosphor protective layer 4 phosphor support substrate 5 reflective layer protective layer 6 reflective layer 7 adhesive layer 8 sealing layer 100 sensor panel 101 glass substrate (base material)
102 Wiring part 103 Photoelectric conversion element part 104 Electrode extraction part (electrode pad part)
105 Sensor protective layer 110 Scintillator panel

Claims (16)

A sensor panel having a base material, a light receiving portion that is disposed on the base material and includes a plurality of photoelectric conversion elements that convert light into an electrical signal, and a protective layer that is disposed on the light receiving portion;
A phosphor underlayer disposed on the sensor panel;
In the radiation detection apparatus having the phosphor layer disposed on the phosphor base layer and converting the radiation into light that can be sensed by the photoelectric conversion element,
The phosphor underlayer Ri Do an organic film formed by polyaddition reaction,
The said organic film consists of polyurea or a polyurethane, The radiation detection apparatus characterized by the above-mentioned .   The radiation detection apparatus according to claim 1, wherein the organic film is formed from two kinds of reactive groups. The radiation according to claim 1 or 2 , wherein the phosphor underlayer is formed by vacuum film formation on the sensor panel, and the phosphor layer is formed by vapor deposition on the phosphor underlayer. Detection device.   The radiation detection apparatus according to claim 1, further comprising a phosphor protective layer made of a hot-melt resin on the phosphor layer. The phosphor layer is a radiation detecting apparatus according to any one of claims 1 to 4, characterized in that it has a columnar crystal structure. The radiation detection apparatus according to any one of claims 1 to 5 ,
A radiation source for generating the radiation;
Signal processing means for processing a signal from the radiation detection apparatus as an image;
Storage means for storing a signal from the signal processing means;
Display means for displaying a signal from the signal processing means;
A radiation detection system comprising: A support member, a phosphor base layer formed on the support member, a phosphor layer formed on the phosphor base layer for converting radiation into light, and a protective layer covering the phosphor layer; In a scintillator panel having
The phosphor underlayer Ri Do an organic film formed by polyaddition reaction,
The scintillator panel , wherein the organic film is made of polyurea or polyurethane . 8. The scintillator panel according to claim 7 , wherein the organic film is formed from two kinds of reactive groups. The scintillator panel according to claim 7 or 8 , wherein the support member includes a support substrate and a reflective layer that reflects the light converted by the phosphor layer. The scintillator panel according to any one of claims 7 to 9 , wherein the phosphor layer has a columnar crystal structure. A scintillator panel according to any one of claims 7 to 10 ,
A radiation detection apparatus comprising: a sensor panel having a plurality of photoelectric conversion elements that photoelectrically convert light converted by the scintillator panel. A radiation detection apparatus according to claim 11 ;
A radiation source for generating the radiation;
Signal processing means for processing a signal from the radiation detection apparatus as an image;
Storage means for storing a signal from the signal processing means;
Display means for displaying a signal from the signal processing means;
A radiation detection system comprising: Radiation having a sensor panel, a phosphor underlayer formed on the sensor panel, and a phosphor layer formed on the phosphor underlayer for converting radiation into light that can be sensed by a photoelectric conversion element. A method for manufacturing a detection device, comprising:
Have a step of forming the phosphor underlying layer made of an organic film by polyaddition reaction to the sensor panel,
The method of manufacturing a radiation detection apparatus, wherein the organic film is made of polyurea or polyurethane . 14. The method of manufacturing a radiation detecting apparatus according to claim 13, wherein the step of forming the phosphor underlayer is performed by a vapor deposition polymerization method using monomers of two kinds of polymer materials.   A scintillator panel manufacturing method comprising: a support member; a phosphor base layer formed on the support member; and a phosphor layer formed on the phosphor base layer for converting radiation into light. ,
  Forming the phosphor base layer made of an organic film by polyaddition reaction on the support member;
  The method of manufacturing a scintillator panel, wherein the organic film is made of polyurea or polyurethane.   The method of manufacturing a scintillator panel according to claim 15, wherein the step of forming the phosphor base layer is performed by a vapor deposition polymerization method using monomers of two kinds of polymer materials.