JP4195802B2 - 半導体撮像素子 - Google Patents

半導体撮像素子 Download PDF

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Publication number
JP4195802B2
JP4195802B2 JP2002215040A JP2002215040A JP4195802B2 JP 4195802 B2 JP4195802 B2 JP 4195802B2 JP 2002215040 A JP2002215040 A JP 2002215040A JP 2002215040 A JP2002215040 A JP 2002215040A JP 4195802 B2 JP4195802 B2 JP 4195802B2
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JP
Japan
Prior art keywords
pixel
node
light
pixels
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2002215040A
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English (en)
Japanese (ja)
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JP2003169252A5 (enExample
JP2003169252A (ja
Inventor
裕 有馬
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イーエヌジー株式会社
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Application filed by イーエヌジー株式会社 filed Critical イーエヌジー株式会社
Priority to JP2002215040A priority Critical patent/JP4195802B2/ja
Priority to US10/237,736 priority patent/US7098951B2/en
Priority to TW091120565A priority patent/TW588467B/zh
Priority to CNB021432228A priority patent/CN100353557C/zh
Publication of JP2003169252A publication Critical patent/JP2003169252A/ja
Publication of JP2003169252A5 publication Critical patent/JP2003169252A5/ja
Application granted granted Critical
Publication of JP4195802B2 publication Critical patent/JP4195802B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2002215040A 2001-09-21 2002-07-24 半導体撮像素子 Expired - Lifetime JP4195802B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002215040A JP4195802B2 (ja) 2001-09-21 2002-07-24 半導体撮像素子
US10/237,736 US7098951B2 (en) 2001-09-21 2002-09-10 Image pickup device with high contrast detection capability
TW091120565A TW588467B (en) 2001-09-21 2002-09-10 Image pickup device with high contrast detection capability
CNB021432228A CN100353557C (zh) 2001-09-21 2002-09-20 对比度检测能力强的半导体摄像元件

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-288255 2001-09-21
JP2001288255 2001-09-21
JP2002215040A JP4195802B2 (ja) 2001-09-21 2002-07-24 半導体撮像素子

Publications (3)

Publication Number Publication Date
JP2003169252A JP2003169252A (ja) 2003-06-13
JP2003169252A5 JP2003169252A5 (enExample) 2005-10-13
JP4195802B2 true JP4195802B2 (ja) 2008-12-17

Family

ID=26622654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002215040A Expired - Lifetime JP4195802B2 (ja) 2001-09-21 2002-07-24 半導体撮像素子

Country Status (4)

Country Link
US (1) US7098951B2 (enExample)
JP (1) JP4195802B2 (enExample)
CN (1) CN100353557C (enExample)
TW (1) TW588467B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3691050B2 (ja) * 2003-10-30 2005-08-31 総吉 廣津 半導体撮像素子
JP3723563B2 (ja) 2004-04-07 2005-12-07 廣津 総吉 半導体撮像素子
US8119965B2 (en) 2006-01-25 2012-02-21 Kyocera Corporation Image sensor having two light receiving elements and camera module having the image sensor
FR2921756B1 (fr) * 2007-09-27 2009-12-25 Commissariat Energie Atomique Matrice de pixels dotes de regulateurs de tension.
US8558940B2 (en) 2008-11-27 2013-10-15 Nikon Corporation Image sensor and image-capturing device
JP4858529B2 (ja) * 2008-11-27 2012-01-18 株式会社ニコン 撮像素子および撮像装置
FR2980660A1 (fr) * 2011-09-22 2013-03-29 Centre Nat Rech Scient Capteur a photosites, perfectionne
TWI482054B (zh) * 2012-03-15 2015-04-21 Wen Chieh Geoffrey Lee 具有多數個彩色光源的高解析度與高敏感度移動偵測器
US20140267000A1 (en) * 2013-03-12 2014-09-18 Jenny Yuen Systems and Methods for Automatically Entering Symbols into a String of Symbols Based on an Image of an Object

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5625210A (en) * 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US6674470B1 (en) * 1996-09-19 2004-01-06 Kabushiki Kaisha Toshiba MOS-type solid state imaging device with high sensitivity
US5945722A (en) * 1997-05-02 1999-08-31 National Semiconductor Corporation Color active pixel sensor cell with oxide color filter
JP3918248B2 (ja) * 1997-09-26 2007-05-23 ソニー株式会社 固体撮像素子およびその駆動方法
JP3466886B2 (ja) * 1997-10-06 2003-11-17 キヤノン株式会社 固体撮像装置
US6097022A (en) * 1998-06-17 2000-08-01 Foveon, Inc. Active pixel sensor with bootstrap amplification
US6757018B1 (en) * 1998-12-18 2004-06-29 Agilent Technologies, Inc. CMOS image sensor with pixel level gain control
JP3514663B2 (ja) 1999-06-01 2004-03-31 三菱電機株式会社 半導体撮像素子
JP3685445B2 (ja) * 2000-02-18 2005-08-17 キヤノン株式会社 固体撮像装置及び撮像システム
US6756576B1 (en) * 2000-08-30 2004-06-29 Micron Technology, Inc. Imaging system having redundant pixel groupings

Also Published As

Publication number Publication date
US7098951B2 (en) 2006-08-29
TW588467B (en) 2004-05-21
CN100353557C (zh) 2007-12-05
CN1409401A (zh) 2003-04-09
US20030058358A1 (en) 2003-03-27
JP2003169252A (ja) 2003-06-13

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