TW588467B - Image pickup device with high contrast detection capability - Google Patents
Image pickup device with high contrast detection capability Download PDFInfo
- Publication number
- TW588467B TW588467B TW091120565A TW91120565A TW588467B TW 588467 B TW588467 B TW 588467B TW 091120565 A TW091120565 A TW 091120565A TW 91120565 A TW91120565 A TW 91120565A TW 588467 B TW588467 B TW 588467B
- Authority
- TW
- Taiwan
- Prior art keywords
- pixel
- node
- semiconductor
- light
- pixels
- Prior art date
Links
- 238000001514 detection method Methods 0.000 title claims description 24
- 230000003321 amplification Effects 0.000 claims abstract description 12
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims description 54
- 238000003384 imaging method Methods 0.000 claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 230000005685 electric field effect Effects 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims 2
- 206010011469 Crying Diseases 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 206010034960 Photophobia Diseases 0.000 abstract description 3
- 208000013469 light sensitivity Diseases 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 24
- 230000035945 sensitivity Effects 0.000 description 15
- 230000006870 function Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 210000004508 polar body Anatomy 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 230000016776 visual perception Effects 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000004438 eyesight Effects 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 241000282412 Homo Species 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 210000000936 intestine Anatomy 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001288255 | 2001-09-21 | ||
| JP2002215040A JP4195802B2 (ja) | 2001-09-21 | 2002-07-24 | 半導体撮像素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW588467B true TW588467B (en) | 2004-05-21 |
Family
ID=26622654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091120565A TW588467B (en) | 2001-09-21 | 2002-09-10 | Image pickup device with high contrast detection capability |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7098951B2 (enExample) |
| JP (1) | JP4195802B2 (enExample) |
| CN (1) | CN100353557C (enExample) |
| TW (1) | TW588467B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3691050B2 (ja) * | 2003-10-30 | 2005-08-31 | 総吉 廣津 | 半導体撮像素子 |
| JP3723563B2 (ja) | 2004-04-07 | 2005-12-07 | 廣津 総吉 | 半導体撮像素子 |
| US8119965B2 (en) | 2006-01-25 | 2012-02-21 | Kyocera Corporation | Image sensor having two light receiving elements and camera module having the image sensor |
| FR2921756B1 (fr) * | 2007-09-27 | 2009-12-25 | Commissariat Energie Atomique | Matrice de pixels dotes de regulateurs de tension. |
| US8558940B2 (en) | 2008-11-27 | 2013-10-15 | Nikon Corporation | Image sensor and image-capturing device |
| JP4858529B2 (ja) * | 2008-11-27 | 2012-01-18 | 株式会社ニコン | 撮像素子および撮像装置 |
| FR2980660A1 (fr) * | 2011-09-22 | 2013-03-29 | Centre Nat Rech Scient | Capteur a photosites, perfectionne |
| TWI482054B (zh) * | 2012-03-15 | 2015-04-21 | Wen Chieh Geoffrey Lee | 具有多數個彩色光源的高解析度與高敏感度移動偵測器 |
| US20140267000A1 (en) * | 2013-03-12 | 2014-09-18 | Jenny Yuen | Systems and Methods for Automatically Entering Symbols into a String of Symbols Based on an Image of an Object |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5625210A (en) * | 1995-04-13 | 1997-04-29 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
| US6674470B1 (en) * | 1996-09-19 | 2004-01-06 | Kabushiki Kaisha Toshiba | MOS-type solid state imaging device with high sensitivity |
| US5945722A (en) * | 1997-05-02 | 1999-08-31 | National Semiconductor Corporation | Color active pixel sensor cell with oxide color filter |
| JP3918248B2 (ja) * | 1997-09-26 | 2007-05-23 | ソニー株式会社 | 固体撮像素子およびその駆動方法 |
| JP3466886B2 (ja) * | 1997-10-06 | 2003-11-17 | キヤノン株式会社 | 固体撮像装置 |
| US6097022A (en) * | 1998-06-17 | 2000-08-01 | Foveon, Inc. | Active pixel sensor with bootstrap amplification |
| US6757018B1 (en) * | 1998-12-18 | 2004-06-29 | Agilent Technologies, Inc. | CMOS image sensor with pixel level gain control |
| JP3514663B2 (ja) | 1999-06-01 | 2004-03-31 | 三菱電機株式会社 | 半導体撮像素子 |
| JP3685445B2 (ja) * | 2000-02-18 | 2005-08-17 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
| US6756576B1 (en) * | 2000-08-30 | 2004-06-29 | Micron Technology, Inc. | Imaging system having redundant pixel groupings |
-
2002
- 2002-07-24 JP JP2002215040A patent/JP4195802B2/ja not_active Expired - Lifetime
- 2002-09-10 US US10/237,736 patent/US7098951B2/en not_active Expired - Fee Related
- 2002-09-10 TW TW091120565A patent/TW588467B/zh not_active IP Right Cessation
- 2002-09-20 CN CNB021432228A patent/CN100353557C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US7098951B2 (en) | 2006-08-29 |
| CN100353557C (zh) | 2007-12-05 |
| JP4195802B2 (ja) | 2008-12-17 |
| CN1409401A (zh) | 2003-04-09 |
| US20030058358A1 (en) | 2003-03-27 |
| JP2003169252A (ja) | 2003-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6512547B1 (en) | Solid-state imaging device and method of detecting optical signals using the same | |
| CN100499141C (zh) | 固体摄像装置 | |
| JP6157630B2 (ja) | Ｃｍｏｓ能動ピクセルの構造 | |
| TWI516123B (zh) | 具有複數個放大器電晶體之高動態範圍像素 | |
| TWI253184B (en) | Semiconductor image pickup device capable of sensing light over wider range | |
| US20060175538A1 (en) | CMOS active pixel sensor and active pixel sensor array using fingered type source follower transistor | |
| US7746383B2 (en) | Photodiode CMOS imager with column-feedback soft-reset for imaging under ultra-low illumination and with high dynamic range | |
| JP2004309701A (ja) | 測距測光用センサ及びカメラ | |
| TW588467B (en) | Image pickup device with high contrast detection capability | |
| US6909126B1 (en) | Imager cell with pinned transfer gate | |
| US7679115B2 (en) | Image sensor and controlling method thereof | |
| JP6263914B2 (ja) | 撮像装置、撮像装置の駆動方法、および、カメラ | |
| CN205692832U (zh) | 图像传感器和像素 | |
| JPH1074926A (ja) | 固体撮像素子 | |
| US6891144B2 (en) | Photo-sensitive element for electro-optical sensors | |
| JP3514663B2 (ja) | 半導体撮像素子 | |
| JPH0964332A (ja) | Ｍｏｓ増幅型撮像装置 | |
| Marshall et al. | Avalanche photodiode-based active pixel imager | |
| US7119320B2 (en) | Photo-sensitive element for electro-optical sensors operating under various illumination conditions | |
| JPH11312799A (ja) | 固体撮像装置 | |
| JP2884195B2 (ja) | 固体撮像装置 | |
| US20050224699A1 (en) | Semiconductor pickup device | |
| JPH02106070A (ja) | 固体撮像装置 | |
| JP2006032538A (ja) | 固体撮像装置 | |
| JP2000350098A (ja) | 固体撮像装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |