JP4181647B2 - 露光方法 - Google Patents

露光方法 Download PDF

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Publication number
JP4181647B2
JP4181647B2 JP09722797A JP9722797A JP4181647B2 JP 4181647 B2 JP4181647 B2 JP 4181647B2 JP 09722797 A JP09722797 A JP 09722797A JP 9722797 A JP9722797 A JP 9722797A JP 4181647 B2 JP4181647 B2 JP 4181647B2
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Japan
Prior art keywords
exposure
lens
gas
optical system
excimer laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP09722797A
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English (en)
Japanese (ja)
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JPH10289853A5 (enExample
JPH10289853A (ja
Inventor
康之 鈴木
謙二 安藤
実 大谷
竜二 枇榔
秀宏 金沢
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP09722797A priority Critical patent/JP4181647B2/ja
Publication of JPH10289853A publication Critical patent/JPH10289853A/ja
Publication of JPH10289853A5 publication Critical patent/JPH10289853A5/ja
Application granted granted Critical
Publication of JP4181647B2 publication Critical patent/JP4181647B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP09722797A 1997-04-15 1997-04-15 露光方法 Expired - Fee Related JP4181647B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP09722797A JP4181647B2 (ja) 1997-04-15 1997-04-15 露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09722797A JP4181647B2 (ja) 1997-04-15 1997-04-15 露光方法

Publications (3)

Publication Number Publication Date
JPH10289853A JPH10289853A (ja) 1998-10-27
JPH10289853A5 JPH10289853A5 (enExample) 2005-03-17
JP4181647B2 true JP4181647B2 (ja) 2008-11-19

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ID=14186753

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Application Number Title Priority Date Filing Date
JP09722797A Expired - Fee Related JP4181647B2 (ja) 1997-04-15 1997-04-15 露光方法

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JP (1) JP4181647B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148340A (ja) * 1999-11-19 2001-05-29 Advantest Corp 荷電粒子ビーム露光方法及び装置
JP4585702B2 (ja) * 2001-02-14 2010-11-24 キヤノン株式会社 露光装置
CN1288504C (zh) * 2002-02-01 2006-12-06 Asml荷兰有限公司 光刻装置和器件制造方法
AU2003246243A1 (en) * 2002-07-03 2004-01-23 Nikon Corporation Method of exposure and aligner
JP2004186614A (ja) * 2002-12-06 2004-07-02 Nikon Corp 露光装置
US8317929B2 (en) * 2005-09-16 2012-11-27 Asml Netherlands B.V. Lithographic apparatus comprising an electrical discharge generator and method for cleaning an element of a lithographic apparatus
US9341951B2 (en) 2012-12-21 2016-05-17 Ultratech, Inc. Wynn-dyson imaging system with reduced thermal distortion

Also Published As

Publication number Publication date
JPH10289853A (ja) 1998-10-27

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