JP4171362B2 - Transparent substrate with antireflection film - Google Patents
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【０００１】
【発明の属する技術分野】
本発明は、可視光の表面反射を防止する機能を有する反射防止膜を備えた透明基板に関する。
【０００２】
【従来の技術】
反射防止膜は、古くから、眼鏡、カメラ、望遠鏡などのレンズ、プリズム、光学計測機器のフィルタ類に広く用いられている。
【０００３】
一般的な反射防止膜としては、低屈折率誘電体をＬ、中屈折率誘電体をＭ，高屈折率誘電体をＨとし設計波長をλとすると、基板／(1/4)λ（Ｌ）厚の単層タイプ、基板／(1/2)
λ（Ｈ）／(1/4)λ（Ｌ）の２層タイプ、基板／(1/4)λ（Ｍ）／(1/2)λ（Ｈ）／(1/4)λ（Ｌ）の３層タイプなどが多用されて、更に多層膜の広帯域タイプなどの膜構成が使われている。
【０００４】
従来、これらの反射防止膜は、一般的には、光学部品に入射する特定波長及び特定波長範囲の光の反射防止、及びそれに伴う透過率向上の目的に限られて用いられていた。これに対して、反射防止膜に他の機能を持たせたものも知られている。その１つには、可視光線以外に紫外光線にも反射防止効果を持たせたものもある（特許文献１参照）。
【０００５】
一方、液晶プロジェクタのような装置では内部の光路中に短波長の紫外線を遮断するフィルタを備えたものも知られている（特許文献２参照）。そのほか紫外線ランプ、エキシマレーザを使用したステッパなどの光学部品に用いられる紫外線反射防止膜も知られている。
【０００６】
これらの紫外線カットフィルタは、通常、石英、パイレックス（登録商標）、白板ガラスなどの透明基板に、屈折率の異なる層を交互に設けた誘電体多層膜を真空蒸着法やスパッタリング法で成膜したものが用いられあるいは偏光分離フィルタなど他の光学部品の一面又は両面に誘電体多層膜から成る紫外線反射膜を真空蒸着法やスパッタリング法で成膜したものが用いられる。しかし、これらの誘電体多層膜を用いた紫外線カットフィルタは非常に高価で装置本体の価格を上げる要因になっていた。
【０００７】
【特許文献１】
特開２００１−７４９０５号公報
【０００８】
【特許文献２】
特開２００１−２６４７２９号公報
【０００９】
【発明が解決しようとする課題】
本発明は、上述のような従来の、種々の装置に用いられる反射防止膜付透明基板の問題点にかんがみてなされたもので、紫外線を充分反射でき、しかも廉価な反射防止膜付透明基板を提供することを目的とする。
【００１０】
【課題を解決するための手段】
上記目的を達成するために、本発明の請求項１によれば、光を通す透明基板の上に反射防止膜を設けた反射防止膜付き透明基板であって、前記反射防止膜は、前記透明基板側から高屈折率層を第１層とする高屈折率層と低屈折率層の８層の交互多層膜から成り、これらの８層の厚さを前記透明基板側から、ｄ１、ｄ２、ｄ３，ｄ４，ｄ５，ｄ６，ｄ７，ｄ８とし、前記透明基板の屈折率をｎｓ、前記高屈折率層の屈折率をｎｈ、前記低屈折率層の屈折率をｎｌとするとき、
上記屈折率の範囲を、１．３５≦ｎｌ≦１．５０、１．９０≦ｎｈ≦２．４５、ｎｌ−０．１≦ｎｓ≦ｎｈとし、
第１乃至第８の各層の光学的膜厚を、０．０１λ ０ ≦ｄ１≦０．０４λ ０ 、（０．５／ｎｓ ３ ）λ ０ ≦ｄ２≦（０．８／ｎｓ ３ ）λ ０ 、０．０７λ ０ ≦ｄ３≦０．１２λ ０ 、０．０８λ ０ ≦ｄ４≦０．１４λ ０ 、０．１８λ ０ ≦ｄ５≦０．２８λ ０ 、０．０２λ ０ ≦ｄ６≦０．０７λ ０ 、０．１６λ ０ ≦ｄ７≦０．２２λ ０ 、０．２２λ ０ ≦ｄ８≦０．３０λ ０ を満す膜構成とし、この交互多層膜は、４５０ｎｍ〜６５０ｎｍの波長範囲における反射率が０．５％以下、かつ、波長３５０ｎｍ以下の紫外線を最大限に反射するように最適設計され、しかも前記高屈折率誘電体層として３８０ｎｍ以下の紫外線を吸収する特性を有する誘電体物質を用いることにより、３５０ｎｍ以下に紫外線の遮蔽機能を増した反射防止膜を設けたことを特徴とする反射防止膜付き透明基板を提供する。
【００１１】
本発明の請求項２によれば、前記透明基板は、石英ガラス、サファイア、水晶、硼珪酸ガラス、又はソーダガラスにより構成されることを特徴とする請求項１記載の反射防止膜付き透明基板を提供する。
【００１３】
本発明の請求項３によれば、前記高屈折率層を構成する誘電体物質は、ＴｉＯ２、Ｎｂ２Ｏ５のいずれか１種あるいは両者の混合物を主成分とするものであり、前記低屈折率層を構成する誘電体物質は、ＳｉＯ２、ＭｇＦ２のいずれかを主成分とするものであることを特徴とする請求項１記載の反射防止膜付き透明基板を提供する。
【００１４】
【発明の実施の形態】
以下、本発明の実施形態について説明する。以下に述べる実施例では真空蒸着法やスパッタリング法で膜を製作する場合について述べるが、他の方法によって成膜してもよいことは勿論である。
【００１５】
図１に示すようにこの透明基板４の上に、膜体６として、高屈折率誘電体層と低屈折率誘電体層を交互に合計8層、設けた。この膜体６は、図示するように、透明基板４上に、高屈折率の誘電体物質層と低屈折率の誘電体物質層が交互に例えば８層、積層された構造とする。
【００１６】
透明基板４から順に、第１層１１、第２層１２、第３層１３、第４層１４、第５層１５、第６層１６、第７層１７、第８層１８が設けられる。第１層１１、第３層１３、第５層１５、第７層１７が高屈折率誘電体層であり、第２層１２、第４層１４、第６層１６、第８層１８が低屈折率誘電体層である。
【００１７】
高屈折率誘電体物質層の屈折率をｎｈ、低屈折率誘電体物質層の屈折率をｎｌ、透明基板の屈折率をｎｓとし、基板側から空気側へ重ねる、第１、第２、第３、第４、第５、第６、第７、第８の各層の光学的膜厚を、ｄ１、ｄ２、ｄ３、ｄ４、ｄ５、ｄ６、ｄ７、ｄ８とする。
【００１８】
（実施例１）
実施例１では、透明基板の材料として石英ガラスを用いた。成膜法としては、五酸化チタン（Ｔｉ２Ｏ５）と二酸化珪素（ＳｉＯ２）を蒸着剤として、使用し、酸素ガスを反応ガスとする反応性真空蒸着法を用いた。石英ガラス基板上に、高屈折率誘電体物質層として屈折率ｎｄ＝２．３０の酸化チタン（ＴｉＯ２）を用い、低屈折率誘電体物質層として屈折率ｎｄ＝１．４６の二酸化珪素（ＳｉＯ２）を用い、表１に示すような膜圧の交互多層膜を製作した。なお、設計波長λ０は５２０ｎｍとした。
【００１９】
【表１】
この膜体６の反射特性の測定結果を図２に示した。図２において、横軸は波長（ｎｍ）を示し、縦軸は反射率（％）を表す。また、上記膜体６の透過率特性の測定結果を図３に示す。図３において横軸は波長（ｎｍ）を示し、縦軸は透過率（％）を示す。
【００２１】
図２によれば、この膜体では４３０ｎｍ以上の領域において反射率が低くなっており、可視域４５０ｎｍから６５０ｎｍの領域で反射率が０．５％以下であることがわかる。また、図３によれば、この膜体では、波長３５０ｎｍより短波長の紫外線の透過率を大幅に減らすことができた。
【００２２】
石英ガラス基板の透過率は図４に示すように、９０％以上の一様に高い透過率の特性を有しており、このような特性を有する石英ガラス基板に上記膜体を設けることによって所望の特性の光を得ることができる。
【００２３】
（実施例２）
実施例２では、透明基板として、サファイアを用いた。成膜法として金属ニオブとポリシリコンをターゲットとして用い、アルゴン（Ａｒ）ガスをスパッタリングガスとし、酸素ガスを反応ガスとする反応マグネトロンスパッタリング法を用いた。サファイア基板上に高屈折率誘電体物質層として五酸化ニオブ（Ｎｂ２Ｏ５）（屈折率ｎｄ＝２．３４）低屈折率誘電体物質層として二酸化珪素（ＳｉＯ２）（屈折率ｎｄ＝１．４７）を用い、設計中心波長λ０＝５２０ｎｍで各層の厚さが表２に示す交互多層膜の膜体を製作した。
【００２４】
【表２】
このようにして製作された膜体の反射特性の測定結果を図５に示した。同図において、横軸は波長（ｎｍ）を示し、縦軸は反射率（％）を表す。また、上記膜体の透過率特性の測定結果を図６に示す。図６において横軸は波長（ｎｍ）を示し、縦軸は透過率（％）を示す。
【００２６】
図５によれば、この膜体では４２５ｎｍ程度以上の領域において反射率が低くなっており、可視域４５０ｎｍから６５０ｎｍの領域で反射率が０．５％以下となっていることがわかる。また、図６によれば、この膜体では、波長３５０ｎｍより短波長の紫外線の透過率を大幅に減らすことができた。
【００２７】
透明基板として、サファイア基板を用いるとき、波長４５０ｎｍから６５０ｎｍの範囲の反射防止性能を、反射率０．５％以下にし、波長３５０ｎｍ以下の紫外線カット特性を最大にするようにし、設計中心波長λ０を波長５００ｎｍから５５０ｎｍの範囲にあって、８層構造の膜体とする。この膜体は、基板側から空気側へ高屈折率誘電体物質層と低屈折率の誘電体物質層を交互に重ねる。
【００２８】
本発明のこの実施例によれば、透明基板であるサファイア基板を用いているので熱伝導性が良好であり、たとえ熱が生じても放熱することができ、温度上昇をある程度抑えることができる効果がある。また、サファイア基板に本発明による反射防止膜を施すことにより３５０ｎｍより短波長の紫外線透過率を大幅に減ずることが可能となる。本発明の反射防止膜により可視域の反射防止特性を有し、かつ紫外線カットフィルタ特性の２特性を併せ持つ反射防止膜を安価に製造することができる。
【００２９】
上記のように、高屈折率誘電体物質層の屈折率をｎｈ、低屈折率誘電体物質層の屈折率をｎｌ、透明基板の屈折率をｎｓとし、基板側から空気側へ重ねる、第１、第２、第３、第４、第５、第６、第７、第８の各層の光学的膜厚を、ｄ１、ｄ２、ｄ３、ｄ４、ｄ５、ｄ６、ｄ７、ｄ８とするとき、上記屈折率の範囲を、１．３５≦ｎｌ≦１．５０、１．９０≦ｎｈ≦２．４５、ｎｌ−０．１≦ｎｓ≦ｎｈ、第１乃至第８の各層の光学的膜厚を、０．０１λ０≦ｄ１≦０．０４λ０、（０．５／ｎｓ３）λ０≦ｄ２≦（０．８／ｎｓ３）λ０、０．０７λ０≦ｄ３≦０．１２λ０、０．０８λ０≦ｄ４≦０．１４λ０、０．１８λ０≦ｄ５≦０．２８λ０、０．０２λ０≦ｄ６≦０．０７λ０、０．１６λ０≦ｄ７≦０．２２λ０、０．２２λ０≦ｄ８≦０．３０λ０を満す膜構成が好ましいことがわかった。
【００３０】
ここで基板と反射防止膜との密着性を向上させるために、基板側と第１層の高屈折率誘電体層の間にＳｉＯ２層を光学的特性に影響を与えない厚さで付加することは差し支えない。ここで、光学的膜厚とは、幾何学的膜厚と屈折率の積である。
【００３１】
第２層が、（０．５／ｎｓ３）λ０≦ｄ２≦（０．８／ｎｓ３）λ０の範囲で好ましい、即ち第２層が大きく基板の屈折率に依存し、基板の屈折率の３乗に反比例した、膜厚が所望の光学特性の付与に最適となる。
【００３２】
このことは、望ましい光学特性が得られる各層の光学膜厚を最適化するソフトウェアを用いて、各種基板に対する多層膜設計を行なった結果から、発明者が共通概念として抽出し数式化した。第２層以外は基板屈折率にかかわらず、所定の数値範囲で最適特性が得られるのに対して、第２層のみは基板屈折率により最適膜厚が大きく異なることを意味している。
【００３３】
なお、上記実施例１、実施例２の説明では、高屈折率誘電体物質層と低屈折率誘電体物質層の膜を８層に構成した場合について説明した。しかし本発明ではこれに限られず、一般的には６から１０層により交互多層膜を構成すればよい。交互多層膜が６層を下回ると３５０ｎｍ以下の近紫外域の紫外線をカットする機能が充分でなく、１０層を超えると生産性が悪くなるためである。
【００３４】
３８０ｎｍ以下の紫外線を吸収する特性を有する高屈折率の誘電体物質としては、ＴｉＯ２、Ｎｂ２Ｏ５のいずれか一種あるいは両者の混合物がもっとも望ましい。しかし、これらとＺｒＯ２、Ｌａ２Ｏ３、Ｐｒ２Ｏ３，Ｐｒ６Ｏ１１、Ｔａ２Ｏ５など他の物質との混合物であってもよい。これら他の物質との混合物では、紫外線吸収特性を維持するためにＴｉＯ２，Ｎｂ２Ｏ５の割合は５０％以上が必要である。またこれらＴｉＯ２，Ｎｂ２Ｏ５は、その成膜法によっては酸素不足の状態であるＴｉＯｘ（１．８＜ｘ＜２．０）やＮｂ２Ｏｘ（４．５＜ｘ＜５．０）となる場合がありこのような場合も本発明に含まれる。
【００３５】
低屈折率層を構成する誘電体物質としては二酸化珪素（ＳｉＯ２）、フッ化マグネシウム（ＭｇＦ２）のいずれかを主成分とするものを用いる。
【００３６】
上述の実施例では、透明基板として石英ガラスやサファイアを用いた場合について述べたが、本発明では、水晶、硼珪酸ガラス、又はソーダガラスにより透明基板を構成してもよい。
【００３７】
【発明の効果】
以上述べたように本発明によれば、紫外線を充分反射でき、しかも廉価な反射防止膜付透明基板を得られる効果がある。
【図面の簡単な説明】
【図１】本発明による反射防止膜の構造を示す図。
【図２】本発明の実施例１の反射特性の測定結果を示す図。
【図３】本発明の実施例１の透過特性の測定結果を示す図。
【図４】本発明に透明基板として用いる石英ガラスの透過特性を示す図。
【図５】本発明の実施例２の反射特性の測定結果を示す図。
【図６】本発明の実施例２の透過特性の測定結果を示す図。
【符号の説明】
４・・・透明基板、６・・・膜体、１１・・・第１層、１２・・・第２層、１３・・・第３層、１４・・・第４層、１５・・・第５層、１６・・・第６層、１７・・・第７層、１８・・・第８層。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a transparent substrate including an antireflection film having a function of preventing surface reflection of visible light.
[0002]
[Prior art]
Antireflection films have long been widely used for lenses such as glasses, cameras, and telescopes, prisms, and filters for optical measuring instruments.
[0003]
As a general antireflection film, a low refractive index dielectric is L, a medium refractive index dielectric is M, a high refractive index dielectric is H, and a design wavelength is λ, the substrate / (1/4) λ (L ) Thick single layer type, substrate / (1/2)
2 layer type of λ (H) / (1/4) λ (L), substrate / (1/4) λ (M) / (1/2) λ (H) / (1/4) λ (L) The three-layer type is widely used, and a multilayer film structure such as a broadband type is further used.
[0004]
Conventionally, these antireflection films have been generally used only for the purpose of preventing reflection of light having a specific wavelength and a specific wavelength range incident on an optical component and improving the transmittance associated therewith. On the other hand, what gave other functions to the antireflection film is also known. One of them is an anti-reflection effect on ultraviolet light as well as visible light (see Patent Document 1).
[0005]
On the other hand, an apparatus such as a liquid crystal projector is known that includes a filter that blocks ultraviolet rays having a short wavelength in an internal optical path (see Patent Document 2). In addition, ultraviolet antireflection films used for optical parts such as ultraviolet lamps and steppers using excimer lasers are also known.
[0006]
These UV-cut filters are usually formed by vacuum deposition or sputtering on a dielectric multilayer film in which layers having different refractive indexes are alternately provided on a transparent substrate such as quartz, Pyrex (registered trademark) or white glass. In other words, an ultraviolet reflecting film made of a dielectric multilayer film is formed on one or both surfaces of other optical components such as a polarization separation filter by a vacuum deposition method or a sputtering method. However, an ultraviolet cut filter using these dielectric multilayer films is very expensive and has been a factor in increasing the price of the apparatus body.
[0007]
[Patent Document 1]
Japanese Patent Laid-Open No. 2001-74905
[Patent Document 2]
Japanese Patent Laid-Open No. 2001-264729
[Problems to be solved by the invention]
The present invention has been made in view of the problems of the conventional transparent substrate with an antireflection film used in various devices as described above, and an inexpensive transparent substrate with an antireflection film that can sufficiently reflect ultraviolet rays. The purpose is to provide.
[0010]
[Means for Solving the Problems]
To achieve the above object, according to
The refractive index ranges are 1.35 ≦ nl ≦ 1.50, 1.90 ≦ nh ≦ 2.45, nl−0.1 ≦ ns ≦ nh,
The optical film thicknesses of the first to eighth layers are set to 0.01λ 0 ≦ d1 ≦ 0.04λ 0 , (0.5 / ns 3 ) λ 0 ≦ d2 ≦ (0.8 / ns 3 ) λ 0 , 0.07λ 0 ≦ d3 ≦ 0.12λ 0 , 0.08λ 0 ≦ d4 ≦ 0.14λ 0 , 0.18λ 0 ≦ d5 ≦ 0.28λ 0 , 0.02λ 0 ≦ d6 ≦ 0.07λ 0 , 0. 16λ 0 ≦ d7 ≦ 0.22λ 0 , 0.22λ 0 ≦ d8 ≦ 0.30λ 0 , and this alternate multilayer film has a reflectance in the wavelength range of 450 nm to 650 nm of 0.5% or less, In addition, by using a dielectric material that is optimally designed to reflect ultraviolet light having a wavelength of 350 nm or less and that absorbs ultraviolet light having a wavelength of 380 nm or less as the high refractive index dielectric layer, ultraviolet light is reduced to 350 nm or less. An anti-reflective coating with increased shielding function A transparent substrate with an antireflection film is provided.
[0011]
According to
[0013]
According to claim 3 of the present invention, the dielectric material constituting the high refractive index layer is mainly composed of any one of TiO 2 and Nb 2 O 5 or a mixture of both, and the low 2. The transparent substrate with an antireflection film according to
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described. In the embodiment described below, a case where a film is manufactured by a vacuum deposition method or a sputtering method will be described, but it is needless to say that the film may be formed by other methods.
[0015]
As shown in FIG. 1, a total of eight layers of high refractive index dielectric layers and low refractive index dielectric layers were alternately provided on the transparent substrate 4 as the
[0016]
In order from the transparent substrate 4, a
[0017]
The refractive index of the high refractive index dielectric material layer is nh, the refractive index of the low refractive index dielectric material layer is nl, and the refractive index of the transparent substrate is ns. The optical film thicknesses of the third, fourth, fifth, sixth, seventh, and eighth layers are d1, d2, d3, d4, d5, d6, d7, and d8.
[0018]
(Example 1)
In Example 1, quartz glass was used as the material for the transparent substrate. As a film forming method, a reactive vacuum vapor deposition method using titanium pentoxide (Ti 2 O 5 ) and silicon dioxide (SiO 2 ) as vapor deposition agents and using oxygen gas as a reaction gas was used. On a quartz glass substrate, titanium oxide (TiO 2 ) having a refractive index nd = 2.30 is used as a high refractive index dielectric material layer, and silicon dioxide (refractive index nd = 1.46 is used as a low refractive index dielectric material layer. Using SiO 2 ), an alternating multilayer film having a film pressure as shown in Table 1 was manufactured. The design wavelength λ 0 was 520 nm.
[0019]
[Table 1]
The measurement results of the reflection characteristics of the
[0021]
According to FIG. 2, it can be seen that in this film body, the reflectance is low in the region of 430 nm or more, and the reflectance is 0.5% or less in the region of the visible region from 450 nm to 650 nm. Moreover, according to FIG. 3, in this film body, the transmittance | permeability of the ultraviolet-ray with a wavelength shorter than 350 nm was able to be reduced significantly.
[0022]
As shown in FIG. 4, the transmittance of the quartz glass substrate has a characteristic of uniformly high transmittance of 90% or more. Desirable by providing the film body on the quartz glass substrate having such characteristics. The light of the characteristic can be obtained.
[0023]
(Example 2)
In Example 2, sapphire was used as the transparent substrate. As a film forming method, a reactive magnetron sputtering method using metallic niobium and polysilicon as a target, argon (Ar) gas as a sputtering gas, and oxygen gas as a reactive gas was used. Niobium pentoxide (Nb 2 O 5 ) (refractive index nd = 2.34) as a high refractive index dielectric material layer on a sapphire substrate, silicon dioxide (SiO 2 ) (refractive index nd = 1) as a low refractive index dielectric material layer .47), and a multilayered film body having a design center wavelength λ 0 = 520 nm and a thickness of each layer shown in Table 2 was manufactured.
[0024]
[Table 2]
FIG. 5 shows the measurement results of the reflection characteristics of the film body thus manufactured. In the figure, the horizontal axis indicates the wavelength (nm), and the vertical axis indicates the reflectance (%). Moreover, the measurement result of the transmittance | permeability characteristic of the said film body is shown in FIG. In FIG. 6, the horizontal axis indicates the wavelength (nm), and the vertical axis indicates the transmittance (%).
[0026]
As can be seen from FIG. 5, in this film body, the reflectance is low in the region of about 425 nm or more, and the reflectance is 0.5% or less in the region of the visible region from 450 nm to 650 nm. Moreover, according to FIG. 6, in this film body, the transmittance | permeability of the ultraviolet-ray with a wavelength shorter than 350 nm was able to be reduced significantly.
[0027]
When a sapphire substrate is used as the transparent substrate, the antireflection performance in the wavelength range of 450 nm to 650 nm is made to have a reflectance of 0.5% or less, and the ultraviolet cut characteristic at a wavelength of 350 nm or less is maximized, and the design center wavelength λ 0 Is a film body having an eight-layer structure in a wavelength range of 500 nm to 550 nm. In this film body, a high refractive index dielectric material layer and a low refractive index dielectric material layer are alternately stacked from the substrate side to the air side.
[0028]
According to this embodiment of the present invention, since the sapphire substrate which is a transparent substrate is used, the thermal conductivity is good, and even if heat is generated, the heat can be dissipated and the temperature rise can be suppressed to some extent. There is. Further, by applying the antireflection film according to the present invention to the sapphire substrate, it is possible to greatly reduce the ultraviolet transmittance of wavelengths shorter than 350 nm. With the antireflection film of the present invention, an antireflection film having an antireflection characteristic in the visible region and having two characteristics of an ultraviolet cut filter characteristic can be produced at low cost.
[0029]
As described above, the refractive index of the high refractive index dielectric material layer is nh, the refractive index of the low refractive index dielectric material layer is nl, and the refractive index of the transparent substrate is ns. When the optical film thicknesses of the second, third, fourth, fifth, sixth, seventh, and eighth layers are d1, d2, d3, d4, d5, d6, d7, and d8, The refractive index range is 1.35 ≦ nl ≦ 1.50, 1.90 ≦ nh ≦ 2.45, nl−0.1 ≦ ns ≦ nh, and the optical film thickness of each of the first to eighth layers, 0.01λ 0 ≦ d1 ≦ 0.04λ 0 , (0.5 / ns 3 ) λ 0 ≦ d2 ≦ (0.8 / ns 3 ) λ 0 , 0.07λ 0 ≦ d3 ≦ 0.12λ 0 , 0. 08λ 0 ≦ d4 ≦ 0.14λ 0, 0.18
[0030]
Here, in order to improve the adhesion between the substrate and the antireflection film, an SiO 2 layer is added between the substrate side and the first high refractive index dielectric layer with a thickness that does not affect the optical characteristics. There is no problem. Here, the optical film thickness is the product of the geometric film thickness and the refractive index.
[0031]
The second layer is preferable in the range of (0.5 / ns 3 ) λ 0 ≦ d2 ≦ (0.8 / ns 3 ) λ 0 , that is, the second layer largely depends on the refractive index of the substrate, and the refractive index of the substrate The film thickness, which is inversely proportional to the third power of the rate, is optimal for imparting desired optical characteristics.
[0032]
This was extracted by the inventor as a common concept and formulated from the results of designing multilayer films for various substrates using software that optimizes the optical film thickness of each layer that provides desirable optical characteristics. This means that the optimum characteristics can be obtained within a predetermined numerical range regardless of the substrate refractive index except for the second layer, whereas only the second layer means that the optimum film thickness greatly varies depending on the substrate refractive index.
[0033]
In the description of the first and second embodiments, the case where the high refractive index dielectric material layer and the low refractive index dielectric material layer are configured as eight layers has been described. However, the present invention is not limited to this. In general, an alternating multilayer film may be formed of 6 to 10 layers. This is because when the alternate multilayer film is less than 6 layers, the function of cutting near-ultraviolet rays of 350 nm or less is not sufficient, and when it exceeds 10 layers, productivity deteriorates.
[0034]
As a dielectric material having a high refractive index having a characteristic of absorbing ultraviolet rays of 380 nm or less, any one of TiO 2 and Nb 2 O 5 or a mixture of both is most desirable. However, it may be a mixture of these and other substances such as ZrO 2 , La 2 O 3 , Pr 2 O 3 , Pr 6 O 11 , Ta 2 O 5 . In a mixture with these other substances, the ratio of TiO 2 and Nb 2 O 5 needs to be 50% or more in order to maintain the ultraviolet absorption characteristics. These TiO 2 and Nb 2 O 5 are TiOx (1.8 <x <2.0) and Nb 2 Ox (4.5 <x <5.0), which are in an oxygen-deficient state depending on the film forming method. Such cases are also included in the present invention.
[0035]
As a dielectric material constituting the low refractive index layer, a material containing either silicon dioxide (SiO 2 ) or magnesium fluoride (MgF 2 ) as a main component is used.
[0036]
In the above-described embodiments, the case where quartz glass or sapphire is used as the transparent substrate has been described. However, in the present invention, the transparent substrate may be formed of quartz, borosilicate glass, or soda glass.
[0037]
【The invention's effect】
As described above, according to the present invention, there is an effect that an ultraviolet ray can be sufficiently reflected and an inexpensive transparent substrate with an antireflection film can be obtained.
[Brief description of the drawings]
FIG. 1 is a view showing the structure of an antireflection film according to the present invention.
FIG. 2 is a diagram showing a measurement result of reflection characteristics of Example 1 of the present invention.
FIG. 3 is a graph showing the measurement results of transmission characteristics of Example 1 of the present invention.
FIG. 4 is a graph showing transmission characteristics of quartz glass used as a transparent substrate in the present invention.
FIG. 5 is a diagram showing a measurement result of reflection characteristics of Example 2 of the present invention.
FIG. 6 is a graph showing the measurement results of transmission characteristics of Example 2 of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 4 ... Transparent substrate, 6 ... Film body, 11 ... 1st layer, 12 ... 2nd layer, 13 ... 3rd layer, 14 ... 4th layer, 15 ... 5th layer, 16 ... 6th layer, 17 ... 7th layer, 18 ... 8th layer.
Claims (3)
前記反射防止膜は、前記透明基板側から高屈折率層を第１層とする高屈折率層と低屈折率層の８層の交互多層膜から成り、これらの８層の厚さを前記透明基板側から、ｄ１、ｄ２、ｄ３，ｄ４，ｄ５，ｄ６，ｄ７，ｄ８とし、前記透明基板の屈折率をｎｓ、前記高屈折率層の屈折率をｎｈ、前記低屈折率層の屈折率をｎｌとするとき、
上記屈折率の範囲を、１．３５≦ｎｌ≦１．５０、１．９０≦ｎｈ≦２．４５、ｎｌ−０．１≦ｎｓ≦ｎｈとし、
第１乃至第８の各層の光学的膜厚を、０．０１λ ０ ≦ｄ１≦０．０４λ ０ 、（０．５／ｎｓ ３ ）λ ０ ≦ｄ２≦（０．８／ｎｓ ３ ）λ ０ 、０．０７λ ０ ≦ｄ３≦０．１２λ ０ 、０．０８λ ０ ≦ｄ４≦０．１４λ ０ 、０．１８λ ０ ≦ｄ５≦０．２８λ ０ 、０．０２λ ０ ≦ｄ６≦０．０７λ ０ 、０．１６λ ０ ≦ｄ７≦０．２２λ ０ 、０．２２λ ０ ≦ｄ８≦０．３０λ ０ を満す膜構成とし、この交互多層膜は、４５０ｎｍ〜６５０ｎｍの波長範囲における反射率が０．５％以下、かつ、波長３５０ｎｍ以下の紫外線を最大限に反射するように最適設計され、しかも前記高屈折率層として３８０ｎｍ以下の紫外線を吸収する特性を有する誘電体物質を用いることにより、３５０ｎｍ以下に紫外線の遮蔽機能を増した反射防止膜を設けたことを特徴とする反射防止膜付き透明基板。A transparent substrate with an antireflection film in which an antireflection film is provided on a transparent substrate through which light passes,
The antireflection film is composed of eight layers of alternating layers of a high refractive index layer and a low refractive index layer, the first layer being a high refractive index layer from the transparent substrate side, and the thickness of these eight layers is set to the transparent layer. From the substrate side, d1, d2, d3, d4, d5, d6, d7, d8, the refractive index of the transparent substrate is ns, the refractive index of the high refractive index layer is nh, and the refractive index of the low refractive index layer is When nl,
The refractive index ranges are 1.35 ≦ nl ≦ 1.50, 1.90 ≦ nh ≦ 2.45, nl−0.1 ≦ ns ≦ nh,
The optical film thicknesses of the first to eighth layers are set to 0.01λ 0 ≦ d1 ≦ 0.04λ 0 , (0.5 / ns 3 ) λ 0 ≦ d2 ≦ (0.8 / ns 3 ) λ 0 , 0.07λ 0 ≦ d3 ≦ 0.12λ 0 , 0.08λ 0 ≦ d4 ≦ 0.14λ 0 , 0.18λ 0 ≦ d5 ≦ 0.28λ 0 , 0.02λ 0 ≦ d6 ≦ 0.07λ 0 , 0. The film configuration satisfies 16λ 0 ≦ d7 ≦ 0.22λ 0 and 0.22λ 0 ≦ d8 ≦ 0.30λ 0 , and this alternate multilayer film has a reflectance of 0.5% or less in a wavelength range of 450 nm to 650 nm, In addition, by using a dielectric material that is optimally designed to reflect ultraviolet rays having a wavelength of 350 nm or less and that absorbs ultraviolet rays having a wavelength of 380 nm or less as the high refractive index layer , the ultraviolet rays are shielded to 350 nm or less. Provided anti-reflective coating with increased functions A transparent substrate with an antireflection film characterized by
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP3151041A1 (en) | 2015-10-02 | 2017-04-05 | Tokai Optical Co., Ltd. | An optical film and spectacle lens |
| KR20170040536A (en) | 2015-10-05 | 2017-04-13 | 토카이 옵티칼 주식회사 | Optical product and eyeglass lens |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2008152069A (en) * | 2006-12-19 | 2008-07-03 | Nippon Electric Glass Co Ltd | Antireflection film |
| EP2199835B1 (en) * | 2007-09-28 | 2018-09-19 | Nikon-Essilor Co., Ltd. | Optical component and manufacturing method of the optical component |
| JP5268436B2 (en) * | 2008-06-06 | 2013-08-21 | キヤノン株式会社 | Optical filter and imaging device |
| CN107390300A (en) | 2009-11-18 | 2017-11-24 | 3M创新有限公司 | Multi-layer optical film |
| JP2013041141A (en) * | 2011-08-17 | 2013-02-28 | Asahi Glass Co Ltd | Imaging device, solid-state imaging element, lens for imaging device, and near infrared light cut-off filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP3151041A1 (en) | 2015-10-02 | 2017-04-05 | Tokai Optical Co., Ltd. | An optical film and spectacle lens |
| KR20170040536A (en) | 2015-10-05 | 2017-04-13 | 토카이 옵티칼 주식회사 | Optical product and eyeglass lens |
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