JP4118602B2 - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
- Publication number
- JP4118602B2 JP4118602B2 JP2002148441A JP2002148441A JP4118602B2 JP 4118602 B2 JP4118602 B2 JP 4118602B2 JP 2002148441 A JP2002148441 A JP 2002148441A JP 2002148441 A JP2002148441 A JP 2002148441A JP 4118602 B2 JP4118602 B2 JP 4118602B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- tft
- interlayer insulating
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 106
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000011229 interlayer Substances 0.000 claims description 157
- 239000010410 layer Substances 0.000 claims description 119
- 239000000758 substrate Substances 0.000 claims description 83
- 239000003990 capacitor Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 42
- 238000003860 storage Methods 0.000 claims description 38
- 238000009751 slip forming Methods 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims 4
- 239000010408 film Substances 0.000 description 599
- 239000004973 liquid crystal related substance Substances 0.000 description 33
- 229910021419 crystalline silicon Inorganic materials 0.000 description 30
- 238000010438 heat treatment Methods 0.000 description 27
- 238000005247 gettering Methods 0.000 description 21
- 230000003197 catalytic effect Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 15
- 239000012535 impurity Substances 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- 150000002894 organic compounds Chemical class 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000733 Li alloy Inorganic materials 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910020751 SixGe1-x Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
Landscapes
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002148441A JP4118602B2 (ja) | 2001-05-23 | 2002-05-22 | 半導体装置およびその作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-154673 | 2001-05-23 | ||
| JP2001154673 | 2001-05-23 | ||
| JP2002148441A JP4118602B2 (ja) | 2001-05-23 | 2002-05-22 | 半導体装置およびその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005116162A Division JP4105173B2 (ja) | 2001-05-23 | 2005-04-13 | 発光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003084687A JP2003084687A (ja) | 2003-03-19 |
| JP2003084687A5 JP2003084687A5 (enExample) | 2005-09-22 |
| JP4118602B2 true JP4118602B2 (ja) | 2008-07-16 |
Family
ID=26615603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002148441A Expired - Fee Related JP4118602B2 (ja) | 2001-05-23 | 2002-05-22 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4118602B2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004296303A (ja) | 2003-03-27 | 2004-10-21 | Seiko Epson Corp | 電気光学装置、その製造方法および電子機器 |
| KR100542997B1 (ko) | 2003-08-07 | 2006-01-20 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
| JP4736013B2 (ja) * | 2003-12-16 | 2011-07-27 | 日本電気株式会社 | 発光表示装置の製造方法 |
| JP2005209583A (ja) * | 2004-01-26 | 2005-08-04 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US7274044B2 (en) * | 2004-01-26 | 2007-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7315047B2 (en) | 2004-01-26 | 2008-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| JP2005242339A (ja) * | 2004-01-26 | 2005-09-08 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US7692378B2 (en) * | 2004-04-28 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device including an insulating layer with an opening |
| JP4785415B2 (ja) * | 2004-05-14 | 2011-10-05 | 株式会社半導体エネルギー研究所 | エレクトロルミネッセンス表示装置の作製方法 |
| EP1793266B1 (en) | 2005-12-05 | 2017-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Transflective Liquid Crystal Display with a Horizontal Electric Field Configuration |
| KR101230307B1 (ko) | 2006-02-17 | 2013-02-06 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
| JP4930501B2 (ja) | 2008-12-22 | 2012-05-16 | ソニー株式会社 | 表示装置および電子機器 |
| KR101232988B1 (ko) | 2009-10-08 | 2013-02-13 | 샤프 가부시키가이샤 | 액정 표시 장치 및 그 제조 방법 |
| TWI665778B (zh) * | 2014-02-05 | 2019-07-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置、模組及電子裝置 |
| KR102573853B1 (ko) * | 2016-09-20 | 2023-09-01 | 삼성디스플레이 주식회사 | 발광 표시 장치 |
| CN107170762B (zh) * | 2017-06-16 | 2019-04-30 | 武汉华星光电半导体显示技术有限公司 | Oled显示面板及其制作方法 |
| JP6597768B2 (ja) * | 2017-12-27 | 2019-10-30 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
| JP7551375B2 (ja) * | 2020-07-20 | 2024-09-17 | 株式会社ジャパンディスプレイ | 表示装置 |
-
2002
- 2002-05-22 JP JP2002148441A patent/JP4118602B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003084687A (ja) | 2003-03-19 |
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