JP4112821B2 - プラズマ処理方法およびプラズマ処理装置 - Google Patents

プラズマ処理方法およびプラズマ処理装置 Download PDF

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Publication number
JP4112821B2
JP4112821B2 JP2001167162A JP2001167162A JP4112821B2 JP 4112821 B2 JP4112821 B2 JP 4112821B2 JP 2001167162 A JP2001167162 A JP 2001167162A JP 2001167162 A JP2001167162 A JP 2001167162A JP 4112821 B2 JP4112821 B2 JP 4112821B2
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Japan
Prior art keywords
electrode
frequency power
glass substrate
plasma processing
gas
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Expired - Fee Related
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JP2001167162A
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Japanese (ja)
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JP2002367962A (ja
JP2002367962A5 (enExample
Inventor
義弘 柳
雅史 森田
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2001167162A priority Critical patent/JP4112821B2/ja
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Publication of JP2002367962A5 publication Critical patent/JP2002367962A5/ja
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  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2001167162A 2001-06-01 2001-06-01 プラズマ処理方法およびプラズマ処理装置 Expired - Fee Related JP4112821B2 (ja)

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JP2001167162A JP4112821B2 (ja) 2001-06-01 2001-06-01 プラズマ処理方法およびプラズマ処理装置

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JP2001167162A JP4112821B2 (ja) 2001-06-01 2001-06-01 プラズマ処理方法およびプラズマ処理装置

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JP2002367962A JP2002367962A (ja) 2002-12-20
JP2002367962A5 JP2002367962A5 (enExample) 2005-10-06
JP4112821B2 true JP4112821B2 (ja) 2008-07-02

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9559022B1 (en) 2016-03-30 2017-01-31 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004301721A (ja) * 2003-03-31 2004-10-28 Sharp Corp 判断装置、判断方法、その判断方法を実現させるための判断プログラム、およびそのプログラムを記録したコンピュータ読取り可能な記録媒体
US8361340B2 (en) 2003-04-28 2013-01-29 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
CA2465195C (en) * 2003-04-28 2012-06-19 Air Products And Chemicals, Inc. Electrode assembly for the removal of surface oxides by electron attachment
US7387738B2 (en) 2003-04-28 2008-06-17 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment for wafer bumping applications
US7897029B2 (en) 2008-03-04 2011-03-01 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
KR100757347B1 (ko) * 2006-08-30 2007-09-10 삼성전자주식회사 이온 주입 장치
JP4660498B2 (ja) 2007-03-27 2011-03-30 株式会社東芝 基板のプラズマ処理装置
JP5514413B2 (ja) * 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
JP6088780B2 (ja) * 2012-10-02 2017-03-01 株式会社アルバック プラズマ処理方法及びプラズマ処理装置
US10821542B2 (en) 2013-03-15 2020-11-03 Mks Instruments, Inc. Pulse synchronization by monitoring power in another frequency band
WO2014174650A1 (ja) * 2013-04-26 2014-10-30 株式会社 日立ハイテクノロジーズ プラズマ処理方法
JP6987021B2 (ja) * 2018-05-28 2021-12-22 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN120048713B (zh) * 2025-02-20 2025-10-24 盛吉盛(宁波)半导体科技有限公司 除电装置、电源连接装置以及半导体加工腔室

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9559022B1 (en) 2016-03-30 2017-01-31 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device

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JP2002367962A (ja) 2002-12-20

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