JP4109736B2 - 位置ずれ検出方法 - Google Patents

位置ずれ検出方法 Download PDF

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Publication number
JP4109736B2
JP4109736B2 JP33126197A JP33126197A JP4109736B2 JP 4109736 B2 JP4109736 B2 JP 4109736B2 JP 33126197 A JP33126197 A JP 33126197A JP 33126197 A JP33126197 A JP 33126197A JP 4109736 B2 JP4109736 B2 JP 4109736B2
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JP
Japan
Prior art keywords
alignment
wafer
mask
grating
incident
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP33126197A
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English (en)
Japanese (ja)
Other versions
JPH11150063A (ja
JPH11150063A5 (enExample
Inventor
隆宏 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP33126197A priority Critical patent/JP4109736B2/ja
Priority to US09/192,193 priority patent/US6285033B1/en
Publication of JPH11150063A publication Critical patent/JPH11150063A/ja
Priority to US09/879,059 priority patent/US6649923B2/en
Publication of JPH11150063A5 publication Critical patent/JPH11150063A5/ja
Application granted granted Critical
Publication of JP4109736B2 publication Critical patent/JP4109736B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7038—Alignment for proximity or contact printer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP33126197A 1997-11-14 1997-11-14 位置ずれ検出方法 Expired - Fee Related JP4109736B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP33126197A JP4109736B2 (ja) 1997-11-14 1997-11-14 位置ずれ検出方法
US09/192,193 US6285033B1 (en) 1997-11-14 1998-11-16 Positional deviation detecting method and device manufacturing method using the same
US09/879,059 US6649923B2 (en) 1997-11-14 2001-06-13 Positional deviation detecting method and device manufacturing method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33126197A JP4109736B2 (ja) 1997-11-14 1997-11-14 位置ずれ検出方法

Publications (3)

Publication Number Publication Date
JPH11150063A JPH11150063A (ja) 1999-06-02
JPH11150063A5 JPH11150063A5 (enExample) 2005-07-07
JP4109736B2 true JP4109736B2 (ja) 2008-07-02

Family

ID=18241719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33126197A Expired - Fee Related JP4109736B2 (ja) 1997-11-14 1997-11-14 位置ずれ検出方法

Country Status (2)

Country Link
US (2) US6285033B1 (enExample)
JP (1) JP4109736B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7978832B2 (en) 2003-09-01 2011-07-12 Canon Kabushiki Kaisha Communicating apparatus, control method of communicating apparatus, and control program of communicating apparatus

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3376961B2 (ja) * 1999-06-08 2003-02-17 ウシオ電機株式会社 マスクを移動させて位置合わせを行う露光装置
IT1313154B1 (it) * 1999-08-05 2002-06-17 St Microelectronics Srl Maschera litografica per dispositivi a semiconduttore con finestra discavo a sezione poligonale,in particolare avente una sezione di almeno
JP2003532306A (ja) * 2000-05-04 2003-10-28 ケーエルエー・テンコール・テクノロジーズ・コーポレーション リソグラフィ・プロセス制御のための方法およびシステム
US6708131B1 (en) * 2000-08-30 2004-03-16 Micron Technology, Inc. Wafer alignment system
IL138552A (en) * 2000-09-19 2006-08-01 Nova Measuring Instr Ltd Lateral shift measurement using an optical technique
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US7349090B2 (en) 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US7196782B2 (en) 2000-09-20 2007-03-27 Kla-Tencor Technologies Corp. Methods and systems for determining a thin film characteristic and an electrical property of a specimen
US6943429B1 (en) * 2001-03-08 2005-09-13 Amkor Technology, Inc. Wafer having alignment marks extending from a first to a second surface of the wafer
JP3605043B2 (ja) * 2001-04-18 2004-12-22 キヤノン株式会社 位置計測装置、露光装置、デバイス製造方法および位置計測方法
JP3806044B2 (ja) * 2002-02-08 2006-08-09 日本電信電話株式会社 表面形状認識用センサおよびその製造方法
TW200303978A (en) * 2002-03-05 2003-09-16 Nikon Corp Position detection device, exposure device and exposure method
JP3953355B2 (ja) * 2002-04-12 2007-08-08 Ｎｅｃエレクトロニクス株式会社 画像処理アライメント方法及び半導体装置の製造方法
JP4095391B2 (ja) * 2002-09-24 2008-06-04 キヤノン株式会社 位置検出方法
KR100520305B1 (ko) * 2003-04-04 2005-10-13 한국전자통신연구원 레이저 변위 센서를 이용하여 마스크와 기판 사이의간격을 측정하는 간격 측정 장치 및 그 방법
US7253885B2 (en) * 2003-12-05 2007-08-07 Canon Kabushiki Kaisha Wavelength selecting method, position detecting method and apparatus, exposure method and apparatus, and device manufacturing method
US7113255B2 (en) * 2003-12-19 2006-09-26 Asml Holding N.V. Grating patch arrangement, lithographic apparatus, method of testing, device manufacturing method, and device manufactured thereby
US7337552B2 (en) * 2004-08-24 2008-03-04 Litel Instruments Method and apparatus for registration with integral alignment optics
JP2006165371A (ja) 2004-12-09 2006-06-22 Canon Inc 転写装置およびデバイス製造方法
JP5350012B2 (ja) * 2009-02-27 2013-11-27 株式会社日立製作所 基板表面のパターン検査装置およびパターン検査方法
JP5809409B2 (ja) * 2009-12-17 2015-11-10 キヤノン株式会社 インプリント装置及びパターン転写方法
WO2011104372A1 (en) * 2010-02-26 2011-09-01 Micronic Mydata AB Method and apparatus for performing pattern alignment
JP5597031B2 (ja) * 2010-05-31 2014-10-01 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
US8605294B2 (en) * 2012-03-09 2013-12-10 Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense Actuating apparatus, actuating system and method for actuating a working stage to move relative to a platform with high-precision positioning capability
US9132623B2 (en) 2013-03-27 2015-09-15 Unipixel Displays, Inc. Method of marking a transparent substrate for visual alignment
US9021952B2 (en) 2013-03-27 2015-05-05 Uni-Pixel Displays, Inc. Laser-assisted alignment of multi-station flexographic printing system
CN104369052A (zh) * 2013-08-14 2015-02-25 鸿富锦精密工业（深圳）有限公司 加工治具、双轮廓加工系统及方法
JP6116456B2 (ja) * 2013-09-25 2017-04-19 株式会社Ｓｃｒｅｅｎホールディングス 描画方法および描画装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2698446B2 (ja) 1988-09-09 1998-01-19 キヤノン株式会社 間隔測定装置
JPH0540013A (ja) * 1991-08-05 1993-02-19 Canon Inc ずれ測定方法及びこの方法を用いた露光装置
US5495336A (en) * 1992-02-04 1996-02-27 Canon Kabushiki Kaisha Position detecting method for detecting a positional relationship between a first object and a second object
US5432603A (en) 1992-11-20 1995-07-11 Canon Kabushiki Kaisha Optical heterodyne interference measuring apparatus and method, and exposing apparatus and device manufacturing method using the same, in which a phase difference between beat signals is detected
US5414514A (en) * 1993-06-01 1995-05-09 Massachusetts Institute Of Technology On-axis interferometric alignment of plates using the spatial phase of interference patterns
US5625453A (en) 1993-10-26 1997-04-29 Canon Kabushiki Kaisha System and method for detecting the relative positional deviation between diffraction gratings and for measuring the width of a line constituting a diffraction grating
JPH0886612A (ja) 1994-09-19 1996-04-02 Canon Inc 光ヘテロダイン干渉を利用した位置ずれ検出装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7978832B2 (en) 2003-09-01 2011-07-12 Canon Kabushiki Kaisha Communicating apparatus, control method of communicating apparatus, and control program of communicating apparatus

Also Published As

Publication number Publication date
US6285033B1 (en) 2001-09-04
JPH11150063A (ja) 1999-06-02
US20010040224A1 (en) 2001-11-15
US6649923B2 (en) 2003-11-18

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