JP4090186B2 - 研磨方法及び研磨装置 - Google Patents
研磨方法及び研磨装置 Download PDFInfo
- Publication number
- JP4090186B2 JP4090186B2 JP2000248145A JP2000248145A JP4090186B2 JP 4090186 B2 JP4090186 B2 JP 4090186B2 JP 2000248145 A JP2000248145 A JP 2000248145A JP 2000248145 A JP2000248145 A JP 2000248145A JP 4090186 B2 JP4090186 B2 JP 4090186B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- wafer
- grindstone
- dressing
- surfactant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005498 polishing Methods 0.000 title claims description 377
- 238000000034 method Methods 0.000 title claims description 29
- 239000004094 surface-active agent Substances 0.000 claims description 49
- 239000006061 abrasive grain Substances 0.000 claims description 44
- 239000004744 fabric Substances 0.000 claims description 19
- 239000002002 slurry Substances 0.000 claims description 17
- 238000003825 pressing Methods 0.000 claims description 10
- 239000006172 buffering agent Substances 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 133
- 239000004065 semiconductor Substances 0.000 description 34
- 238000000227 grinding Methods 0.000 description 29
- 238000004140 cleaning Methods 0.000 description 22
- 239000000126 substance Substances 0.000 description 17
- 238000012546 transfer Methods 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 238000010586 diagram Methods 0.000 description 13
- 239000007788 liquid Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 8
- 238000011065 in-situ storage Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000004575 stone Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000007853 buffer solution Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000872 buffer Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Landscapes
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000248145A JP4090186B2 (ja) | 1999-08-18 | 2000-08-18 | 研磨方法及び研磨装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23192499 | 1999-08-18 | ||
| JP11-231924 | 1999-08-18 | ||
| JP2000248145A JP4090186B2 (ja) | 1999-08-18 | 2000-08-18 | 研磨方法及び研磨装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001127022A JP2001127022A (ja) | 2001-05-11 |
| JP2001127022A5 JP2001127022A5 (enExample) | 2005-07-21 |
| JP4090186B2 true JP4090186B2 (ja) | 2008-05-28 |
Family
ID=26530182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000248145A Expired - Fee Related JP4090186B2 (ja) | 1999-08-18 | 2000-08-18 | 研磨方法及び研磨装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4090186B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040248415A1 (en) | 2002-02-20 | 2004-12-09 | Yutaka Wada | Polishing method and polishing liquid |
| JP2003318140A (ja) * | 2002-04-26 | 2003-11-07 | Applied Materials Inc | 研磨方法及び装置 |
| US6910951B2 (en) * | 2003-02-24 | 2005-06-28 | Dow Global Technologies, Inc. | Materials and methods for chemical-mechanical planarization |
| JP5671510B2 (ja) * | 2012-06-27 | 2015-02-18 | 株式会社岡本工作機械製作所 | 半導体デバイス基板の研削方法 |
| JP2024085517A (ja) * | 2022-12-15 | 2024-06-27 | 株式会社荏原製作所 | 研磨装置 |
-
2000
- 2000-08-18 JP JP2000248145A patent/JP4090186B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001127022A (ja) | 2001-05-11 |
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