JP4083035B2 - 電子線、ｅｕｖ又はｘ線用レジスト組成物 - Google Patents

電子線、ｅｕｖ又はｘ線用レジスト組成物 Download PDF

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Publication number
JP4083035B2
JP4083035B2 JP2003035456A JP2003035456A JP4083035B2 JP 4083035 B2 JP4083035 B2 JP 4083035B2 JP 2003035456 A JP2003035456 A JP 2003035456A JP 2003035456 A JP2003035456 A JP 2003035456A JP 4083035 B2 JP4083035 B2 JP 4083035B2
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group
substituted
acid
substituent
fluorine atom
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JP2004004557A (ja
JP2004004557A5 (enExample
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一良 水谷
表 高橋
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Fujifilm Corp
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Fujifilm Corp
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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Electron Beam Exposure (AREA)
JP2003035456A 2002-02-13 2003-02-13 電子線、ｅｕｖ又はｘ線用レジスト組成物 Expired - Lifetime JP4083035B2 (ja)

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JP2003035456A JP4083035B2 (ja) 2002-02-13 2003-02-13 電子線、ｅｕｖ又はｘ線用レジスト組成物

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002035685 2002-02-13
JP2002038494 2002-02-15
JP2003035456A JP4083035B2 (ja) 2002-02-13 2003-02-13 電子線、ｅｕｖ又はｘ線用レジスト組成物

Related Child Applications (1)

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JP2007334532A Division JP4701231B2 (ja) 2002-02-13 2007-12-26 電子線、ｅｕｖ又はｘ線用ネガ型レジスト組成物及びそれを用いたパターン形成方法

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JP2004004557A JP2004004557A (ja) 2004-01-08
JP2004004557A5 JP2004004557A5 (enExample) 2005-09-22
JP4083035B2 true JP4083035B2 (ja) 2008-04-30

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Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4347110B2 (ja) 2003-10-22 2009-10-21 東京応化工業株式会社 電子線又はｅｕｖ用ポジ型レジスト組成物
JP4491335B2 (ja) * 2004-02-16 2010-06-30 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
US7449573B2 (en) 2004-02-16 2008-11-11 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition
JP2005275072A (ja) * 2004-03-25 2005-10-06 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4439409B2 (ja) * 2005-02-02 2010-03-24 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
US7541131B2 (en) 2005-02-18 2009-06-02 Fujifilm Corporation Resist composition, compound for use in the resist composition and pattern forming method using the resist composition
JP4505357B2 (ja) * 2005-03-16 2010-07-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP4568667B2 (ja) * 2005-09-22 2010-10-27 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4617252B2 (ja) * 2005-12-22 2011-01-19 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4958584B2 (ja) * 2006-02-28 2012-06-20 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2008037857A (ja) * 2006-07-14 2008-02-21 Tokyo Ohka Kogyo Co Ltd 化合物、酸発生剤、レジスト組成物及びレジストパターン形成方法
JP4840076B2 (ja) * 2006-10-20 2011-12-21 Ｊｓｒ株式会社 パターン形成方法
JP2008127300A (ja) * 2006-11-17 2008-06-05 Tokyo Ohka Kogyo Co Ltd 化合物、酸発生剤、レジスト組成物及びレジストパターン形成方法
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP5186532B2 (ja) * 2006-12-25 2013-04-17 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP2009053665A (ja) * 2007-08-02 2009-03-12 Fujifilm Corp 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP2010134126A (ja) * 2008-12-03 2010-06-17 Jsr Corp 感放射線性組樹脂組成物
JP5439124B2 (ja) * 2009-11-11 2014-03-12 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
JP5611652B2 (ja) * 2010-05-06 2014-10-22 信越化学工業株式会社 ネガ型レジスト材料、パターン形成方法及びフォトマスクブランク
JP5856991B2 (ja) * 2012-05-21 2016-02-10 富士フイルム株式会社 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスクの製造方法及びパターン形成方法、並びに、電子デバイスの製造方法
US10168616B2 (en) * 2014-04-02 2019-01-01 Sumitomo Chemical Company, Limited Photoresist composition and process of producing photoresist pattern

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