JP4079992B2 - 導電性被処理体を載置部材に締め付けるための装置及び静電クランピング方法 - Google Patents

導電性被処理体を載置部材に締め付けるための装置及び静電クランピング方法 Download PDF

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Publication number
JP4079992B2
JP4079992B2 JP51399296A JP51399296A JP4079992B2 JP 4079992 B2 JP4079992 B2 JP 4079992B2 JP 51399296 A JP51399296 A JP 51399296A JP 51399296 A JP51399296 A JP 51399296A JP 4079992 B2 JP4079992 B2 JP 4079992B2
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Japan
Prior art keywords
wafer
gas
platen
mounting member
electrode
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Expired - Lifetime
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JP51399296A
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Japanese (ja)
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JPH11504760A (ja
Inventor
ホワイト，ニコラス・アール
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バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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Publication of JPH11504760A publication Critical patent/JPH11504760A/ja
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    • H10P72/0434—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H10P72/0432—
    • H10P72/72—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP51399296A 1994-10-17 1995-10-17 導電性被処理体を載置部材に締め付けるための装置及び静電クランピング方法 Expired - Lifetime JP4079992B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32376494A 1994-10-17 1994-10-17
US08/323,764 1994-10-17
PCT/US1995/013158 WO1996013058A2 (en) 1994-10-17 1995-10-17 Apparatus and method for temperature control of workpieces in vacuum

Publications (2)

Publication Number Publication Date
JPH11504760A JPH11504760A (ja) 1999-04-27
JP4079992B2 true JP4079992B2 (ja) 2008-04-23

Family

ID=23260617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51399296A Expired - Lifetime JP4079992B2 (ja) 1994-10-17 1995-10-17 導電性被処理体を載置部材に締め付けるための装置及び静電クランピング方法

Country Status (5)

Country Link
US (1) US5822172A (index.php)
EP (1) EP0871843B1 (index.php)
JP (1) JP4079992B2 (index.php)
DE (1) DE69530801T2 (index.php)
WO (1) WO1996013058A2 (index.php)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5679404A (en) * 1995-06-07 1997-10-21 Saint-Gobain/Norton Industrial Ceramics Corporation Method for depositing a substance with temperature control
US6166897A (en) * 1997-01-22 2000-12-26 Tomoegawa Paper Co., Ltd. Static chuck apparatus and its manufacture
JPH10240356A (ja) * 1997-02-21 1998-09-11 Anelva Corp 基板処理装置の基板温度制御法と基板温度制御性判定法
US6207005B1 (en) 1997-07-29 2001-03-27 Silicon Genesis Corporation Cluster tool apparatus using plasma immersion ion implantation
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US6113735A (en) * 1998-03-02 2000-09-05 Silicon Genesis Corporation Distributed system and code for control and automation of plasma immersion ion implanter
JP2000021964A (ja) 1998-07-06 2000-01-21 Ngk Insulators Ltd 静電チャックのパーティクル発生低減方法および半導体製造装置
FR2785737B1 (fr) * 1998-11-10 2001-01-05 Semco Engineering Sa Dispositif de maintien electrostatique
US6303411B1 (en) 1999-05-03 2001-10-16 Vortek Industries Ltd. Spatially resolved temperature measurement and irradiance control
EP1194954B1 (en) * 1999-07-08 2011-05-18 Lam Research Corporation Electrostatic chuck and its manufacturing method
WO2001026141A2 (en) * 1999-10-01 2001-04-12 Varian Semiconductor Equipment Associates, Inc. Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure
US6538873B1 (en) 1999-11-02 2003-03-25 Varian Semiconductor Equipment Associates, Inc. Active electrostatic seal and electrostatic vacuum pump
US6362946B1 (en) * 1999-11-02 2002-03-26 Varian Semiconductor Equipment Associates, Inc. Electrostatic wafer clamp having electrostatic seal for retaining gas
JP2001284440A (ja) * 2000-03-16 2001-10-12 Asm Lithography Bv リソグラフ装置の基板ホルダ
US6736952B2 (en) * 2001-02-12 2004-05-18 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece
TWI272689B (en) * 2001-02-16 2007-02-01 Tokyo Electron Ltd Method and apparatus for transferring heat from a substrate to a chuck
US6998353B2 (en) * 2001-11-05 2006-02-14 Ibis Technology Corporation Active wafer cooling during damage engineering implant to enhance buried oxide formation in SIMOX wafers
KR101067902B1 (ko) 2001-12-26 2011-09-27 맷슨 테크날러지 캐나다 인코퍼레이티드 온도 측정 및 열처리 방법과 시스템
US6734117B2 (en) * 2002-03-12 2004-05-11 Nikon Corporation Periodic clamping method and apparatus to reduce thermal stress in a wafer
US20040066601A1 (en) * 2002-10-04 2004-04-08 Varian Semiconductor Equipment Associates, Inc. Electrode configuration for retaining cooling gas on electrostatic wafer clamp
JP4988202B2 (ja) 2002-12-20 2012-08-01 マトソン テクノロジー カナダ インコーポレイテッド 工作物の支持及び熱処理の方法とシステム
KR100573351B1 (ko) * 2002-12-26 2006-04-25 미츠비시 쥬고교 가부시키가이샤 정전 척
US6934595B1 (en) * 2003-02-26 2005-08-23 National Semiconductor Corp. Method and system for reducing semiconductor wafer breakage
US7357115B2 (en) * 2003-03-31 2008-04-15 Lam Research Corporation Wafer clamping apparatus and method for operating the same
US7151658B2 (en) * 2003-04-22 2006-12-19 Axcelis Technologies, Inc. High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer
JP5630935B2 (ja) 2003-12-19 2014-11-26 マトソン テクノロジー、インコーポレイテッド 工作物の熱誘起運動を抑制する機器及び装置
US7352554B2 (en) * 2004-06-30 2008-04-01 Axcelis Technologies, Inc. Method for fabricating a Johnsen-Rahbek electrostatic wafer clamp
US20060060145A1 (en) * 2004-09-17 2006-03-23 Van Den Berg Jannes R Susceptor with surface roughness for high temperature substrate processing
US7126091B1 (en) 2005-03-23 2006-10-24 Eclipse Energy Systems, Inc. Workpiece holder for vacuum processing
WO2008058397A1 (en) 2006-11-15 2008-05-22 Mattson Technology Canada, Inc. Systems and methods for supporting a workpiece during heat-treating
TWI459851B (zh) * 2007-09-10 2014-11-01 日本碍子股份有限公司 heating equipment
EP2095946A1 (en) * 2008-02-27 2009-09-02 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO A system for patterning flexible foils
US9558980B2 (en) 2008-04-30 2017-01-31 Axcelis Technologies, Inc. Vapor compression refrigeration chuck for ion implanters
US9036326B2 (en) * 2008-04-30 2015-05-19 Axcelis Technologies, Inc. Gas bearing electrostatic chuck
US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus
JP2010123810A (ja) * 2008-11-20 2010-06-03 Ulvac Japan Ltd 基板保持装置及び基板温度制御方法
US8004817B2 (en) * 2009-06-18 2011-08-23 Varian Semiconductor Equipment Associates, Inc. Method of platen fabrication to allow electrode pattern and gas cooling optimization
FR2974251B1 (fr) * 2011-04-18 2013-11-01 Ecole Polytech Dispositif pour la gestion thermique d'un élément optique et procédé de gestion thermique associe.
JP5550602B2 (ja) * 2011-04-28 2014-07-16 パナソニック株式会社 静電チャックおよびこれを備えるドライエッチング装置
SG2014012371A (en) * 2011-08-19 2014-04-28 Ulvac Inc Vacuum processing device and vacuum processing method
JP5505667B2 (ja) * 2011-09-30 2014-05-28 Ｔｏｔｏ株式会社 交流駆動静電チャック
US10032601B2 (en) * 2014-02-21 2018-07-24 Varian Semiconductor Equipment Associates, Inc. Platen support structure
KR101877452B1 (ko) * 2016-05-19 2018-08-09 한국기계연구원 도전 물질의 패터닝 장치 및 방법
JP7020951B2 (ja) * 2018-02-09 2022-02-16 東京エレクトロン株式会社 プラズマ処理システムおよびプラズマ処理方法
KR20210089375A (ko) * 2020-01-08 2021-07-16 주식회사 미코세라믹스 정전척
JP7183223B2 (ja) * 2020-08-28 2022-12-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US11417557B2 (en) * 2020-12-15 2022-08-16 Entegris, Inc. Spiraling polyphase electrodes for electrostatic chuck

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261762A (en) 1979-09-14 1981-04-14 Eaton Corporation Method for conducting heat to or from an article being treated under vacuum
US4457359A (en) * 1982-05-25 1984-07-03 Varian Associates, Inc. Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
US4603466A (en) * 1984-02-17 1986-08-05 Gca Corporation Wafer chuck
JP2678381B2 (ja) * 1987-05-06 1997-11-17 ユニサーチ・リミテッド 交流電界励振を利用した静電チャック
US4949783A (en) * 1988-05-18 1990-08-21 Veeco Instruments, Inc. Substrate transport and cooling apparatus and method for same
JPH03227554A (ja) * 1990-02-01 1991-10-08 Tokyo Electron Ltd 静電チャック
US5179498A (en) * 1990-05-17 1993-01-12 Tokyo Electron Limited Electrostatic chuck device
EP0460955A1 (en) * 1990-06-08 1991-12-11 Varian Associates, Inc. Clamping a workpiece utilizing polyphase clamping voltage
US5452177A (en) * 1990-06-08 1995-09-19 Varian Associates, Inc. Electrostatic wafer clamp
US5184398A (en) * 1991-08-30 1993-02-09 Texas Instruments Incorporated In-situ real-time sheet resistance measurement method
US5315473A (en) * 1992-01-21 1994-05-24 Applied Materials, Inc. Isolated electrostatic chuck and excitation method
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5436790A (en) * 1993-01-15 1995-07-25 Eaton Corporation Wafer sensing and clamping monitor
US5444597A (en) * 1993-01-15 1995-08-22 Blake; Julian G. Wafer release method and apparatus
US5345999A (en) * 1993-03-17 1994-09-13 Applied Materials, Inc. Method and apparatus for cooling semiconductor wafers
EP0635870A1 (en) * 1993-07-20 1995-01-25 Applied Materials, Inc. An electrostatic chuck having a grooved surface
US5474614A (en) * 1994-06-10 1995-12-12 Texas Instruments Incorporated Method and apparatus for releasing a semiconductor wafer from an electrostatic clamp

Also Published As

Publication number Publication date
WO1996013058A2 (en) 1996-05-02
EP0871843A4 (index.php) 1998-10-21
EP0871843B1 (en) 2003-05-14
DE69530801D1 (de) 2003-06-18
DE69530801T2 (de) 2004-03-11
US5822172A (en) 1998-10-13
EP0871843A2 (en) 1998-10-21
JPH11504760A (ja) 1999-04-27
WO1996013058A3 (en) 1996-06-27

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