JP4077523B2 - 電子装置用温度制御システム - Google Patents

電子装置用温度制御システム Download PDF

Info

Publication number
JP4077523B2
JP4077523B2 JP54295898A JP54295898A JP4077523B2 JP 4077523 B2 JP4077523 B2 JP 4077523B2 JP 54295898 A JP54295898 A JP 54295898A JP 54295898 A JP54295898 A JP 54295898A JP 4077523 B2 JP4077523 B2 JP 4077523B2
Authority
JP
Japan
Prior art keywords
heater
temperature
electronic device
control system
heat sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP54295898A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001526837A5 (enExample
JP2001526837A (ja
Inventor
バブコック，ジェイムズ・ウィトマン
タスタニウスキ，ジェリー・イホー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisys Corp
Original Assignee
Unisys Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/833,273 external-priority patent/US5864176A/en
Priority claimed from US08/833,368 external-priority patent/US5844208A/en
Priority claimed from US08/833,369 external-priority patent/US5821505A/en
Application filed by Unisys Corp filed Critical Unisys Corp
Publication of JP2001526837A publication Critical patent/JP2001526837A/ja
Publication of JP2001526837A5 publication Critical patent/JP2001526837A5/ja
Application granted granted Critical
Publication of JP4077523B2 publication Critical patent/JP4077523B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1919—Control of temperature characterised by the use of electric means characterised by the type of controller
    • G05D23/192—Control of temperature characterised by the use of electric means characterised by the type of controller using a modification of the thermal impedance between a source and the load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/345—Arrangements for heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01065—Terbium [Tb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01076—Osmium [Os]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10156—Shape being other than a cuboid at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15192—Resurf arrangement of the internal vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Automation & Control Theory (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Control Of Temperature (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP54295898A 1997-04-04 1998-04-03 電子装置用温度制御システム Expired - Lifetime JP4077523B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US08/833,368 1997-04-04
US08/833,273 1997-04-04
US08/833,273 US5864176A (en) 1997-04-04 1997-04-04 Electro-mechnical subassembly having a greatly reduced thermal resistance between two mating faces by including a film of liquid, that evaporates without leaving any residue, between the faces
US08/833,369 1997-04-04
US08/833,368 US5844208A (en) 1997-04-04 1997-04-04 Temperature control system for an electronic device in which device temperature is estimated from heater temperature and heat sink temperature
US08/833,369 US5821505A (en) 1997-04-04 1997-04-04 Temperature control system for an electronic device which achieves a quick response by interposing a heater between the device and a heat sink
PCT/US1998/006701 WO1998046059A1 (en) 1997-04-04 1998-04-03 Temperature control system for an electronic device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2005066502A Division JP4122009B2 (ja) 1997-04-04 2005-03-10 電子機械的サブアセンブリ、および電子装置を熱交換部材に熱結合する方法
JP2007301819A Division JP2008118149A (ja) 1997-04-04 2007-11-21 電子機械的アセンブリ、および電子装置を熱交換部材に熱結合する方法

Publications (3)

Publication Number Publication Date
JP2001526837A JP2001526837A (ja) 2001-12-18
JP2001526837A5 JP2001526837A5 (enExample) 2005-11-10
JP4077523B2 true JP4077523B2 (ja) 2008-04-16

Family

ID=27420238

Family Applications (3)

Application Number Title Priority Date Filing Date
JP54295898A Expired - Lifetime JP4077523B2 (ja) 1997-04-04 1998-04-03 電子装置用温度制御システム
JP2005066502A Expired - Fee Related JP4122009B2 (ja) 1997-04-04 2005-03-10 電子機械的サブアセンブリ、および電子装置を熱交換部材に熱結合する方法
JP2007301819A Pending JP2008118149A (ja) 1997-04-04 2007-11-21 電子機械的アセンブリ、および電子装置を熱交換部材に熱結合する方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2005066502A Expired - Fee Related JP4122009B2 (ja) 1997-04-04 2005-03-10 電子機械的サブアセンブリ、および電子装置を熱交換部材に熱結合する方法
JP2007301819A Pending JP2008118149A (ja) 1997-04-04 2007-11-21 電子機械的アセンブリ、および電子装置を熱交換部材に熱結合する方法

Country Status (4)

Country Link
EP (4) EP0994645B1 (enExample)
JP (3) JP4077523B2 (enExample)
DE (3) DE69822158T2 (enExample)
WO (1) WO1998046059A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007503127A (ja) * 2003-08-21 2007-02-15 ユニシス　コーポレイシヨン Ｉｃモジュールに液体冷媒液滴を噴霧し、放射（輻射）を向ける温度制御システム

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6668570B2 (en) 2001-05-31 2003-12-30 Kryotech, Inc. Apparatus and method for controlling the temperature of an electronic device under test
US6658736B1 (en) * 2002-08-09 2003-12-09 Unisys Corporation Method of fabricating a heat exchanger, for regulating the temperature of multiple integrated circuit modules, having a face of a solid malleable metal coated with a release agent
US6975028B1 (en) 2003-03-19 2005-12-13 Delta Design, Inc. Thermal apparatus for engaging electronic device
US7199597B2 (en) * 2004-02-16 2007-04-03 Delta Design, Inc. Dual feedback control system for maintaining the temperature of an IC-chip near a set-point
DE102004042075A1 (de) * 2004-08-31 2005-10-20 Infineon Technologies Ag Schaltungsanordnung mit temperaturgesteuerter Schaltungseinheit und Verfahren zur Temperatursteuerung
DE102005001163B3 (de) * 2005-01-10 2006-05-18 Erich Reitinger Verfahren und Vorrichtung zum Testen von Halbleiterwafern mittels einer temperierbaren Aufspanneinrichtung
JP4418772B2 (ja) 2005-04-28 2010-02-24 富士通マイクロエレクトロニクス株式会社 温度制御装置
JP4315141B2 (ja) 2005-09-09 2009-08-19 セイコーエプソン株式会社 電子部品の温度制御装置並びにハンドラ装置
JP5552452B2 (ja) * 2011-03-04 2014-07-16 パナソニック株式会社 加熱冷却試験方法および加熱冷却試験装置
WO2013076006A1 (de) 2011-11-24 2013-05-30 Wintershall Holding GmbH Derivate von tris(2-hydroxyphenyl)methanen, deren herstellung und verwendung für die erdölförderung
GB2507732A (en) * 2012-11-07 2014-05-14 Oclaro Technology Ltd Laser temperature control
DE102013010088A1 (de) 2013-06-18 2014-12-18 VENSYS Elektrotechnik GmbH Kühlvorrichtung für ein Stromumrichtermodul
EP3326043A1 (en) * 2015-07-21 2018-05-30 Delta Design, Inc. Continuous fluidic thermal interface material dispensing
KR200494784Y1 (ko) * 2018-11-06 2021-12-28 김진국 세정기
CN113412031A (zh) * 2021-06-21 2021-09-17 合肥联宝信息技术有限公司 一种升温模组及电子设备
AU2022204614A1 (en) * 2021-08-27 2023-03-16 Ametek, Inc. Temperature dependent electronic component heating system

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979671A (en) * 1975-03-06 1976-09-07 International Business Machines Corporation Test fixture for use in a high speed electronic semiconductor chip test system
JPS5961027A (ja) * 1982-09-29 1984-04-07 Toshiba Corp 半導体基板加熱装置
JPS5986235A (ja) * 1982-11-09 1984-05-18 Shimada Phys & Chem Ind Co Ltd 半導体基板の電気的特性測定方法
US4567505A (en) * 1983-10-27 1986-01-28 The Board Of Trustees Of The Leland Stanford Junior University Heat sink and method of attaching heat sink to a semiconductor integrated circuit and the like
US4854726A (en) * 1986-05-29 1989-08-08 Hughes Aircraft Company Thermal stress screening system
JPH07105422B2 (ja) * 1987-03-16 1995-11-13 東京エレクトロン株式会社 半導体ウエハ載置台
BE1000697A6 (fr) * 1987-10-28 1989-03-14 Irish Transformers Ltd Appareil pour tester des circuits electriques integres.
JPH01152639A (ja) * 1987-12-10 1989-06-15 Canon Inc 吸着保持装置
US4848090A (en) * 1988-01-27 1989-07-18 Texas Instruments Incorporated Apparatus for controlling the temperature of an integrated circuit package
US4962416A (en) * 1988-04-18 1990-10-09 International Business Machines Corporation Electronic package with a device positioned above a substrate by suction force between the device and heat sink
US4975766A (en) * 1988-08-26 1990-12-04 Nec Corporation Structure for temperature detection in a package
US4975803A (en) * 1988-12-07 1990-12-04 Sundstrand Corporation Cold plane system for cooling electronic circuit components
JP3201868B2 (ja) * 1992-03-20 2001-08-27 アジレント・テクノロジーズ・インク 導電性熱インターフェース及びその方法
JPH05267200A (ja) * 1992-03-24 1993-10-15 Hitachi Ltd 半導体熱処理装置
US5448147A (en) * 1992-05-08 1995-09-05 Tel-Varian Limited Selectable feedback control system
US5420521A (en) 1992-10-27 1995-05-30 Ej Systems, Inc. Burn-in module
JP3067480B2 (ja) * 1993-08-26 2000-07-17 三菱自動車工業株式会社 レーザ焼入れ用レーザ吸収剤
JPH08286551A (ja) * 1995-04-12 1996-11-01 Ricoh Co Ltd 温度制御装置
GB9610663D0 (en) * 1996-05-22 1996-07-31 Univ Paisley Temperature control apparatus and methods

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007503127A (ja) * 2003-08-21 2007-02-15 ユニシス　コーポレイシヨン Ｉｃモジュールに液体冷媒液滴を噴霧し、放射（輻射）を向ける温度制御システム

Also Published As

Publication number Publication date
JP4122009B2 (ja) 2008-07-23
EP0994645B1 (en) 2003-09-24
DE69818468T2 (de) 2004-07-22
EP2086306A1 (en) 2009-08-05
EP0993243A2 (en) 2000-04-12
WO1998046059A1 (en) 1998-10-15
DE69822158T2 (de) 2005-02-17
JP2005249798A (ja) 2005-09-15
EP0994645A2 (en) 2000-04-19
DE69818468D1 (de) 2003-10-30
EP1016337A1 (en) 2000-07-05
JP2008118149A (ja) 2008-05-22
DE69839520D1 (de) 2008-07-03
EP0993243B1 (en) 2004-03-03
EP2086306B1 (en) 2013-06-05
JP2001526837A (ja) 2001-12-18
DE69822158D1 (de) 2004-04-08
EP0994645A3 (en) 2000-07-12
EP1016337B1 (en) 2008-05-21
EP0993243A3 (en) 2000-07-12

Similar Documents

Publication Publication Date Title
JP2008118149A (ja) 電子機械的アセンブリ、および電子装置を熱交換部材に熱結合する方法
US5844208A (en) Temperature control system for an electronic device in which device temperature is estimated from heater temperature and heat sink temperature
US5864176A (en) Electro-mechnical subassembly having a greatly reduced thermal resistance between two mating faces by including a film of liquid, that evaporates without leaving any residue, between the faces
US5821505A (en) Temperature control system for an electronic device which achieves a quick response by interposing a heater between the device and a heat sink
US7394271B2 (en) Temperature sensing and prediction in IC sockets
US6476627B1 (en) Method and apparatus for temperature control of a device during testing
EP3799111B1 (en) Inspection device and temperature control method
US5260668A (en) Semiconductor surface resistivity probe with semiconductor temperature control
US7271604B2 (en) Method and apparatus for testing semiconductor wafers by means of a temperature-regulated chuck device
US6786639B2 (en) Device for sensing temperature of an electronic chip
EP3550313A1 (en) Placement stand and electronic device inspecting apparatus
JP2019153717A (ja) 検査装置
US11221358B2 (en) Placement stand and electronic device inspecting apparatus
KR20070114310A (ko) Ｉｃ 소켓의 온도 감지 및 예측
CN103869233A (zh) 一种半导体器件内部薄层热阻的测量方法
US6466038B1 (en) Non-isothermal electromigration testing of microelectronic packaging interconnects
EP3937216A1 (en) Method for controlling temperature of substrate support and inspection apparatus
JPH1144727A (ja) 回路基板検査装置
Siegal An introduction to diode thermal measurements
WO2023047999A1 (ja) 基板載置機構、検査装置、および検査方法
JP2004361197A (ja) 電子部品発熱量測定方法
Hamilton Thermal aspects of burn-in of high power semiconductor devices
JP2001004718A (ja) 半導体試験装置の冷却装置
JPH04144248A (ja) 半導体集積回路の試験方法
CN120530481A (zh) 检查系统和温度控制方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050310

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050310

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061212

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20070309

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20070423

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070530

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070724

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071121

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20071220

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080108

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080201

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110208

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110208

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120208

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120208

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130208

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130208

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140208

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term