JP4058234B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4058234B2
JP4058234B2 JP2000377279A JP2000377279A JP4058234B2 JP 4058234 B2 JP4058234 B2 JP 4058234B2 JP 2000377279 A JP2000377279 A JP 2000377279A JP 2000377279 A JP2000377279 A JP 2000377279A JP 4058234 B2 JP4058234 B2 JP 4058234B2
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JP
Japan
Prior art keywords
wiring layer
wiring
layer
semiconductor device
voltage amplitude
Prior art date
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Expired - Fee Related
Application number
JP2000377279A
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English (en)
Japanese (ja)
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JP2001244267A (ja
JP2001244267A5 (enExample
Inventor
充宏 野口
彰 西山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Publication date
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Priority to JP2000377279A priority Critical patent/JP4058234B2/ja
Publication of JP2001244267A publication Critical patent/JP2001244267A/ja
Publication of JP2001244267A5 publication Critical patent/JP2001244267A5/ja
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Publication of JP4058234B2 publication Critical patent/JP4058234B2/ja
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2000377279A 1999-12-22 2000-12-12 半導体装置 Expired - Fee Related JP4058234B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000377279A JP4058234B2 (ja) 1999-12-22 2000-12-12 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-364199 1999-12-22
JP36419999 1999-12-22
JP2000377279A JP4058234B2 (ja) 1999-12-22 2000-12-12 半導体装置

Publications (3)

Publication Number Publication Date
JP2001244267A JP2001244267A (ja) 2001-09-07
JP2001244267A5 JP2001244267A5 (enExample) 2004-11-25
JP4058234B2 true JP4058234B2 (ja) 2008-03-05

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ID=26581550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000377279A Expired - Fee Related JP4058234B2 (ja) 1999-12-22 2000-12-12 半導体装置

Country Status (1)

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JP (1) JP4058234B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243538A (ja) * 2002-02-12 2003-08-29 Hitachi Ltd 半導体集積回路装置
JP2005072573A (ja) * 2003-08-05 2005-03-17 Semiconductor Energy Lab Co Ltd 配線基板及びその作製方法、並びに半導体装置及びその作製方法
JP5089850B2 (ja) * 2003-11-25 2012-12-05 ルネサスエレクトロニクス株式会社 半導体装置
JP4535845B2 (ja) 2004-10-29 2010-09-01 富士通セミコンダクター株式会社 半導体装置
US7936072B2 (en) * 2007-11-12 2011-05-03 Renesas Electronics Corporation Semiconductor device having dual damascene structure
EP3155666B1 (en) * 2014-06-16 2021-05-12 Intel IP Corporation Metal on both sides with clock gated power and signal routing underneath
JP6741933B2 (ja) 2015-10-02 2020-08-19 ミツミ電機株式会社 光走査モジュール、光走査制御装置

Also Published As

Publication number Publication date
JP2001244267A (ja) 2001-09-07

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