JP4057762B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4057762B2
JP4057762B2 JP2000123839A JP2000123839A JP4057762B2 JP 4057762 B2 JP4057762 B2 JP 4057762B2 JP 2000123839 A JP2000123839 A JP 2000123839A JP 2000123839 A JP2000123839 A JP 2000123839A JP 4057762 B2 JP4057762 B2 JP 4057762B2
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JP
Japan
Prior art keywords
film
insulating film
hard mask
semiconductor device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000123839A
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English (en)
Japanese (ja)
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JP2001308178A (ja
JP2001308178A5 (https=
Inventor
和里 原
圭亮 船津
俊則 今井
純司 野口
直史 大橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
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Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000123839A priority Critical patent/JP4057762B2/ja
Priority to TW090108015A priority patent/TW508784B/zh
Priority to US09/823,975 priority patent/US6495466B2/en
Priority to KR1020010021109A priority patent/KR100783868B1/ko
Publication of JP2001308178A publication Critical patent/JP2001308178A/ja
Priority to US10/298,585 priority patent/US6734104B2/en
Publication of JP2001308178A5 publication Critical patent/JP2001308178A5/ja
Application granted granted Critical
Publication of JP4057762B2 publication Critical patent/JP4057762B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/044—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2000123839A 2000-04-25 2000-04-25 半導体装置の製造方法 Expired - Fee Related JP4057762B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000123839A JP4057762B2 (ja) 2000-04-25 2000-04-25 半導体装置の製造方法
TW090108015A TW508784B (en) 2000-04-25 2001-04-03 Method of manufacturing a semiconductor device and a semiconductor device
US09/823,975 US6495466B2 (en) 2000-04-25 2001-04-03 Method of manufacturing a semiconductor device and a semiconductor device
KR1020010021109A KR100783868B1 (ko) 2000-04-25 2001-04-19 반도체장치의 제조방법 및 반도체장치
US10/298,585 US6734104B2 (en) 2000-04-25 2002-11-19 Method of manufacturing a semiconductor device and a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000123839A JP4057762B2 (ja) 2000-04-25 2000-04-25 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001308178A JP2001308178A (ja) 2001-11-02
JP2001308178A5 JP2001308178A5 (https=) 2006-03-30
JP4057762B2 true JP4057762B2 (ja) 2008-03-05

Family

ID=18634066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000123839A Expired - Fee Related JP4057762B2 (ja) 2000-04-25 2000-04-25 半導体装置の製造方法

Country Status (4)

Country Link
US (2) US6495466B2 (https=)
JP (1) JP4057762B2 (https=)
KR (1) KR100783868B1 (https=)
TW (1) TW508784B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010030169A1 (en) * 2000-04-13 2001-10-18 Hideo Kitagawa Method of etching organic film and method of producing element
US6800918B2 (en) * 2001-04-18 2004-10-05 Intel Corporation EMI and noise shielding for multi-metal layer high frequency integrated circuit processes
JP2003142579A (ja) * 2001-11-07 2003-05-16 Hitachi Ltd 半導体装置の製造方法および半導体装置
US6949411B1 (en) * 2001-12-27 2005-09-27 Lam Research Corporation Method for post-etch and strip residue removal on coral films
US20030215570A1 (en) * 2002-05-16 2003-11-20 Applied Materials, Inc. Deposition of silicon nitride
US20050062164A1 (en) * 2003-09-23 2005-03-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for improving time dependent dielectric breakdown lifetimes
US7444867B2 (en) * 2005-01-04 2008-11-04 Bell Geospace, Inc. Accelerometer and rate sensor package for gravity gradiometer instruments
KR101674989B1 (ko) 2013-05-21 2016-11-22 제일모직 주식회사 레지스트 하층막용 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
CN103996618B (zh) * 2014-05-09 2017-01-18 上海大学 Tft电极引线制造方法
CN103996653B (zh) * 2014-05-09 2017-01-04 上海大学 Tft深接触孔制造方法
US12454752B2 (en) * 2022-01-14 2025-10-28 Asm Ip Holding B.V. Method and apparatus for forming a patterned structure on a substrate

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09139423A (ja) 1995-11-13 1997-05-27 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3660799B2 (ja) 1997-09-08 2005-06-15 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3300643B2 (ja) 1997-09-09 2002-07-08 株式会社東芝 半導体装置の製造方法
US6066569A (en) * 1997-09-30 2000-05-23 Siemens Aktiengesellschaft Dual damascene process for metal layers and organic intermetal layers
TW337608B (en) * 1997-10-29 1998-08-01 United Microelectronics Corp Process for producing unlanded via
DE19756988C1 (de) * 1997-12-20 1999-09-02 Daimler Benz Ag Elektrisch beheizbare Glühkerze oder Glühstab für Verbrennungsmotoren
JP3107047B2 (ja) * 1998-05-28 2000-11-06 日本電気株式会社 半導体装置の製造方法
JP3186040B2 (ja) * 1998-06-01 2001-07-11 日本電気株式会社 半導体装置の製造方法
KR20000019171A (ko) * 1998-09-09 2000-04-06 윤종용 감광성 폴리머를 사용하는 금속배선 형성방법
US6184142B1 (en) * 1999-04-26 2001-02-06 United Microelectronics Corp. Process for low k organic dielectric film etch
US6165891A (en) * 1999-11-22 2000-12-26 Chartered Semiconductor Manufacturing Ltd. Damascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layer
US6261963B1 (en) * 2000-07-07 2001-07-17 Advanced Micro Devices, Inc. Reverse electroplating of barrier metal layer to improve electromigration performance in copper interconnect devices

Also Published As

Publication number Publication date
US6495466B2 (en) 2002-12-17
US6734104B2 (en) 2004-05-11
JP2001308178A (ja) 2001-11-02
KR100783868B1 (ko) 2007-12-10
TW508784B (en) 2002-11-01
KR20010098743A (ko) 2001-11-08
US20030073317A1 (en) 2003-04-17
US20010034132A1 (en) 2001-10-25

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