KR100783868B1 - 반도체장치의 제조방법 및 반도체장치 - Google Patents

반도체장치의 제조방법 및 반도체장치 Download PDF

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Publication number
KR100783868B1
KR100783868B1 KR1020010021109A KR20010021109A KR100783868B1 KR 100783868 B1 KR100783868 B1 KR 100783868B1 KR 1020010021109 A KR1020010021109 A KR 1020010021109A KR 20010021109 A KR20010021109 A KR 20010021109A KR 100783868 B1 KR100783868 B1 KR 100783868B1
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South Korea
Prior art keywords
insulating film
hard mask
film
pattern
etching
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Expired - Fee Related
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KR1020010021109A
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English (en)
Korean (ko)
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KR20010098743A (ko
Inventor
하라카즈사토
후나쯔케이스케
이마이토시노리
노구치준지
오오하시나오후미
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20010098743A publication Critical patent/KR20010098743A/ko
Application granted granted Critical
Publication of KR100783868B1 publication Critical patent/KR100783868B1/ko
Assigned to 르네사스 일렉트로닉스 가부시키가이샤 reassignment 르네사스 일렉트로닉스 가부시키가이샤 권리의 전부이전등록 Assignors: 가부시키가이샤 히타치세이사쿠쇼
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/044—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
KR1020010021109A 2000-04-25 2001-04-19 반도체장치의 제조방법 및 반도체장치 Expired - Fee Related KR100783868B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000123839A JP4057762B2 (ja) 2000-04-25 2000-04-25 半導体装置の製造方法
JP2000-123839 2000-04-25

Publications (2)

Publication Number Publication Date
KR20010098743A KR20010098743A (ko) 2001-11-08
KR100783868B1 true KR100783868B1 (ko) 2007-12-10

Family

ID=18634066

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010021109A Expired - Fee Related KR100783868B1 (ko) 2000-04-25 2001-04-19 반도체장치의 제조방법 및 반도체장치

Country Status (4)

Country Link
US (2) US6495466B2 (https=)
JP (1) JP4057762B2 (https=)
KR (1) KR100783868B1 (https=)
TW (1) TW508784B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9606438B2 (en) 2013-05-21 2017-03-28 Cheil Industries, Inc. Resist underlayer composition, method of forming patterns, and semiconductor integrated circuit device including the pattern

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010030169A1 (en) * 2000-04-13 2001-10-18 Hideo Kitagawa Method of etching organic film and method of producing element
US6800918B2 (en) * 2001-04-18 2004-10-05 Intel Corporation EMI and noise shielding for multi-metal layer high frequency integrated circuit processes
JP2003142579A (ja) * 2001-11-07 2003-05-16 Hitachi Ltd 半導体装置の製造方法および半導体装置
US6949411B1 (en) * 2001-12-27 2005-09-27 Lam Research Corporation Method for post-etch and strip residue removal on coral films
US20030215570A1 (en) * 2002-05-16 2003-11-20 Applied Materials, Inc. Deposition of silicon nitride
US20050062164A1 (en) * 2003-09-23 2005-03-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for improving time dependent dielectric breakdown lifetimes
US7444867B2 (en) * 2005-01-04 2008-11-04 Bell Geospace, Inc. Accelerometer and rate sensor package for gravity gradiometer instruments
CN103996618B (zh) * 2014-05-09 2017-01-18 上海大学 Tft电极引线制造方法
CN103996653B (zh) * 2014-05-09 2017-01-04 上海大学 Tft深接触孔制造方法
US12454752B2 (en) * 2022-01-14 2025-10-28 Asm Ip Holding B.V. Method and apparatus for forming a patterned structure on a substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976984A (en) * 1997-10-29 1999-11-02 United Microelectronics Corp. Process of making unlanded vias
JPH11340329A (ja) * 1998-05-28 1999-12-10 Nec Corp 半導体装置の製造方法
KR20000005759A (ko) * 1998-06-01 2000-01-25 가네코 히사시 반도체장치및제조방법
KR20000019171A (ko) * 1998-09-09 2000-04-06 윤종용 감광성 폴리머를 사용하는 금속배선 형성방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09139423A (ja) 1995-11-13 1997-05-27 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3660799B2 (ja) 1997-09-08 2005-06-15 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3300643B2 (ja) 1997-09-09 2002-07-08 株式会社東芝 半導体装置の製造方法
US6066569A (en) * 1997-09-30 2000-05-23 Siemens Aktiengesellschaft Dual damascene process for metal layers and organic intermetal layers
DE19756988C1 (de) * 1997-12-20 1999-09-02 Daimler Benz Ag Elektrisch beheizbare Glühkerze oder Glühstab für Verbrennungsmotoren
US6184142B1 (en) * 1999-04-26 2001-02-06 United Microelectronics Corp. Process for low k organic dielectric film etch
US6165891A (en) * 1999-11-22 2000-12-26 Chartered Semiconductor Manufacturing Ltd. Damascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layer
US6261963B1 (en) * 2000-07-07 2001-07-17 Advanced Micro Devices, Inc. Reverse electroplating of barrier metal layer to improve electromigration performance in copper interconnect devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976984A (en) * 1997-10-29 1999-11-02 United Microelectronics Corp. Process of making unlanded vias
JPH11340329A (ja) * 1998-05-28 1999-12-10 Nec Corp 半導体装置の製造方法
KR20000005759A (ko) * 1998-06-01 2000-01-25 가네코 히사시 반도체장치및제조방법
KR20000019171A (ko) * 1998-09-09 2000-04-06 윤종용 감광성 폴리머를 사용하는 금속배선 형성방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9606438B2 (en) 2013-05-21 2017-03-28 Cheil Industries, Inc. Resist underlayer composition, method of forming patterns, and semiconductor integrated circuit device including the pattern

Also Published As

Publication number Publication date
US6495466B2 (en) 2002-12-17
US6734104B2 (en) 2004-05-11
JP2001308178A (ja) 2001-11-02
TW508784B (en) 2002-11-01
KR20010098743A (ko) 2001-11-08
JP4057762B2 (ja) 2008-03-05
US20030073317A1 (en) 2003-04-17
US20010034132A1 (en) 2001-10-25

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