JP4049237B2 - ポジ型電子線又はｘ線レジスト組成物 - Google Patents

ポジ型電子線又はｘ線レジスト組成物 Download PDF

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Publication number
JP4049237B2
JP4049237B2 JP34078599A JP34078599A JP4049237B2 JP 4049237 B2 JP4049237 B2 JP 4049237B2 JP 34078599 A JP34078599 A JP 34078599A JP 34078599 A JP34078599 A JP 34078599A JP 4049237 B2 JP4049237 B2 JP 4049237B2
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Japan
Prior art keywords
group
compound
electron beam
acid
substituted
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Japanese (ja)
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JP2001154363A5 (enExample
JP2001154363A (ja
Inventor
豊 阿出川
邦彦 児玉
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP34078599A priority Critical patent/JP4049237B2/ja
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
JP34078599A 1999-11-30 1999-11-30 ポジ型電子線又はｘ線レジスト組成物 Expired - Lifetime JP4049237B2 (ja)

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JP34078599A JP4049237B2 (ja) 1999-11-30 1999-11-30 ポジ型電子線又はｘ線レジスト組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34078599A JP4049237B2 (ja) 1999-11-30 1999-11-30 ポジ型電子線又はｘ線レジスト組成物

Publications (3)

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JP2001154363A JP2001154363A (ja) 2001-06-08
JP2001154363A5 JP2001154363A5 (enExample) 2005-07-07
JP4049237B2 true JP4049237B2 (ja) 2008-02-20

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JP34078599A Expired - Lifetime JP4049237B2 (ja) 1999-11-30 1999-11-30 ポジ型電子線又はｘ線レジスト組成物

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW548520B (en) * 2000-02-18 2003-08-21 Fuji Photo Film Co Ltd Positive resist composition for X-rays or electron beams
US6949329B2 (en) 2001-06-22 2005-09-27 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US7521168B2 (en) * 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP4492786B2 (ja) * 2004-02-16 2010-06-30 三菱瓦斯化学株式会社 感放射線性組成物
CN111198479B (zh) * 2018-11-20 2024-05-28 东京应化工业株式会社 抗蚀剂组合物以及抗蚀剂图案形成方法
JP7414457B2 (ja) * 2018-11-20 2024-01-16 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法

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JP2001154363A (ja) 2001-06-08

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