JP4033730B2 - プラズマ処理装置用基板載置台及びプラズマ処理装置及びプラズマ処理装置用の基台部 - Google Patents
プラズマ処理装置用基板載置台及びプラズマ処理装置及びプラズマ処理装置用の基台部 Download PDFInfo
- Publication number
- JP4033730B2 JP4033730B2 JP2002202000A JP2002202000A JP4033730B2 JP 4033730 B2 JP4033730 B2 JP 4033730B2 JP 2002202000 A JP2002202000 A JP 2002202000A JP 2002202000 A JP2002202000 A JP 2002202000A JP 4033730 B2 JP4033730 B2 JP 4033730B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma processing
- processing apparatus
- mounting table
- substrate mounting
- electrostatic chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 99
- 239000007789 gas Substances 0.000 claims description 56
- 239000000853 adhesive Substances 0.000 claims description 43
- 230000001070 adhesive effect Effects 0.000 claims description 43
- 230000007246 mechanism Effects 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000001307 helium Substances 0.000 claims description 9
- 229910052734 helium Inorganic materials 0.000 claims description 9
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000011800 void material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 19
- 238000005530 etching Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Landscapes
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002202000A JP4033730B2 (ja) | 2002-07-10 | 2002-07-10 | プラズマ処理装置用基板載置台及びプラズマ処理装置及びプラズマ処理装置用の基台部 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002202000A JP4033730B2 (ja) | 2002-07-10 | 2002-07-10 | プラズマ処理装置用基板載置台及びプラズマ処理装置及びプラズマ処理装置用の基台部 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004047653A JP2004047653A (ja) | 2004-02-12 |
| JP2004047653A5 JP2004047653A5 (enrdf_load_stackoverflow) | 2005-10-27 |
| JP4033730B2 true JP4033730B2 (ja) | 2008-01-16 |
Family
ID=31708310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002202000A Expired - Fee Related JP4033730B2 (ja) | 2002-07-10 | 2002-07-10 | プラズマ処理装置用基板載置台及びプラズマ処理装置及びプラズマ処理装置用の基台部 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4033730B2 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD553104S1 (en) | 2004-04-21 | 2007-10-16 | Tokyo Electron Limited | Absorption board for an electric chuck used in semiconductor manufacture |
| US8491752B2 (en) | 2006-12-15 | 2013-07-23 | Tokyo Electron Limited | Substrate mounting table and method for manufacturing same, substrate processing apparatus, and fluid supply mechanism |
| JP2009188332A (ja) | 2008-02-08 | 2009-08-20 | Tokyo Electron Ltd | プラズマ処理装置用基板載置台、プラズマ処理装置および絶縁皮膜の成膜方法 |
| JP5390846B2 (ja) | 2008-12-09 | 2014-01-15 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマクリーニング方法 |
| JP6080571B2 (ja) * | 2013-01-31 | 2017-02-15 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
| JP2018107264A (ja) * | 2016-12-26 | 2018-07-05 | 東京エレクトロン株式会社 | 消耗判定方法及びプラズマ処理装置 |
| JP7340938B2 (ja) * | 2019-02-25 | 2023-09-08 | 東京エレクトロン株式会社 | 載置台及び基板処理装置 |
-
2002
- 2002-07-10 JP JP2002202000A patent/JP4033730B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004047653A (ja) | 2004-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4935143B2 (ja) | 載置台及び真空処理装置 | |
| JP7454976B2 (ja) | 基板支持台、プラズマ処理システム及びエッジリングの交換方法 | |
| JP4547182B2 (ja) | プラズマ処理装置 | |
| JP5492578B2 (ja) | プラズマ処理装置 | |
| JP5102500B2 (ja) | 基板処理装置 | |
| CN105355585B (zh) | 基板处理装置的基板载置台 | |
| JP2005033221A (ja) | 基板載置台および処理装置 | |
| US7815492B2 (en) | Surface treatment method | |
| JPWO2003009363A1 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
| JP2018186179A (ja) | 基板処理装置及び基板取り外し方法 | |
| JP5503503B2 (ja) | プラズマ処理装置 | |
| JP2008251742A (ja) | 基板処理装置及びフォーカスリングを載置する基板載置台 | |
| JP6552346B2 (ja) | 基板処理装置 | |
| JPWO2004084298A1 (ja) | 静電チャックを用いた基板保持機構およびその製造方法 | |
| US20070051472A1 (en) | Ring-shaped component for use in a plasma processing, plasma processing apparatus and outer ring-shaped member | |
| WO2002007212A1 (fr) | Dispositif de maintien pour corps traite | |
| TW200935512A (en) | Apparatus and methof for plasma treatment | |
| JP2008103403A (ja) | 基板載置台及びプラズマ処理装置 | |
| CN110690096A (zh) | 静电吸盘、等离子体处理设备以及制造半导体装置的方法 | |
| JP2016031956A (ja) | プラズマ処理装置 | |
| WO2004021427A1 (ja) | プラズマ処理方法及びプラズマ処理装置 | |
| JP4033730B2 (ja) | プラズマ処理装置用基板載置台及びプラズマ処理装置及びプラズマ処理装置用の基台部 | |
| JPH09289201A (ja) | プラズマ処理装置 | |
| JP7632812B2 (ja) | 静電チャック、基板固定装置 | |
| JP4783094B2 (ja) | プラズマ処理用環状部品、プラズマ処理装置、及び外側環状部材 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050705 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050705 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070419 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070424 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070622 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20071023 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071023 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101102 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131102 Year of fee payment: 6 |
|
| LAPS | Cancellation because of no payment of annual fees |