JP4027914B2 - 照明装置及びそれを用いた機器 - Google Patents
照明装置及びそれを用いた機器 Download PDFInfo
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- JP4027914B2 JP4027914B2 JP2004152365A JP2004152365A JP4027914B2 JP 4027914 B2 JP4027914 B2 JP 4027914B2 JP 2004152365 A JP2004152365 A JP 2004152365A JP 2004152365 A JP2004152365 A JP 2004152365A JP 4027914 B2 JP4027914 B2 JP 4027914B2
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- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
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- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
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- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
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- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21W—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
- F21W2131/00—Use or application of lighting devices or systems not provided for in codes F21W2102/00-F21W2121/00
- F21W2131/10—Outdoor lighting
- F21W2131/101—Outdoor lighting of tunnels or the like, e.g. under bridges
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004152365A JP4027914B2 (ja) | 2004-05-21 | 2004-05-21 | 照明装置及びそれを用いた機器 |
| US11/120,999 US7692199B2 (en) | 2004-05-21 | 2005-05-04 | Lighting device including first electrode, second electrode, light emitting layer therebetween and third electrode connected to the first electrode through opening in the second electrode and the light emitting layer |
| CN2005100759003A CN1717137B (zh) | 2004-05-21 | 2005-05-20 | 照明装置 |
| CN201010167432.3A CN101841004B (zh) | 2004-05-21 | 2005-05-20 | 照明装置 |
| US12/564,089 US8143629B2 (en) | 2004-05-21 | 2009-09-22 | Lighting system and lighting device |
| US13/271,565 US8269225B2 (en) | 2004-05-21 | 2011-10-12 | Lighting device |
| US13/612,945 US8541790B2 (en) | 2004-05-21 | 2012-09-13 | Lighting device |
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Families Citing this family (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4027914B2 (ja) | 2004-05-21 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 照明装置及びそれを用いた機器 |
| US7733441B2 (en) * | 2004-06-03 | 2010-06-08 | Semiconductor Energy Labortory Co., Ltd. | Organic electroluminescent lighting system provided with an insulating layer containing fluorescent material |
| TW200616254A (en) * | 2004-11-12 | 2006-05-16 | Univ Nat Central | Light emitting diode structure and manufacturing method thereof |
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| DE102008020816B4 (de) * | 2008-02-29 | 2019-10-10 | Osram Oled Gmbh | Organische Leuchtdiode, flächiges, optisch aktives Element mit einer Kontaktanordnung und Verfahren zur Herstellung einer organischen Leuchtdiode |
| JP5390784B2 (ja) * | 2008-04-11 | 2014-01-15 | ローム株式会社 | 有機ｅｌ素子 |
| EP2120275A3 (en) * | 2008-05-16 | 2012-08-22 | Semiconductor Energy Laboratory Co, Ltd. | Light-emitting element, lighting apparatus, light-emitting device, electronic appliance, and display |
| DE102008051048A1 (de) * | 2008-10-09 | 2010-04-15 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper |
| TWI366292B (en) * | 2008-12-26 | 2012-06-11 | Ind Tech Res Inst | Flexible light source device and fabricating method of thereof |
| US8405116B2 (en) | 2009-03-18 | 2013-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device |
| US8847480B2 (en) | 2009-03-18 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device |
| CN102356697B (zh) | 2009-03-18 | 2014-05-28 | 株式会社半导体能源研究所 | 照明装置 |
| US20100247747A1 (en) * | 2009-03-27 | 2010-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Film Deposition Apparatus, Method for Depositing Film, and Method for Manufacturing Lighting Device |
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| US20100294526A1 (en) * | 2009-05-21 | 2010-11-25 | General Electric Company | Hermetic electrical package |
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| US8496341B2 (en) | 2010-10-07 | 2013-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device |
| US9188323B2 (en) | 2010-10-20 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device |
| JP5795935B2 (ja) | 2010-10-20 | 2015-10-14 | 株式会社半導体エネルギー研究所 | 照明装置 |
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| US8727586B2 (en) | 2010-11-05 | 2014-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device having magnetic member and magnet |
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| JP5827104B2 (ja) | 2010-11-19 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 照明装置 |
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| JP5827885B2 (ja) | 2010-12-24 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 発光装置及び照明装置 |
| KR20120092019A (ko) | 2011-02-09 | 2012-08-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
| KR101880184B1 (ko) | 2011-02-14 | 2018-07-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 |
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| JP2014509442A (ja) * | 2011-03-22 | 2014-04-17 | オーシャンズ キング ライティング サイエンス アンド テクノロジー シーオー．，エルティーディー | 有機エレクトロルミネセンスデバイス、及び、その導電性基板 |
| JP2013101893A (ja) * | 2011-11-10 | 2013-05-23 | Konica Minolta Holdings Inc | 有機ｅｌ素子 |
| JP5907722B2 (ja) | 2011-12-23 | 2016-04-26 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| US8912547B2 (en) | 2012-01-20 | 2014-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, display device, and semiconductor device |
| WO2013128601A1 (ja) * | 2012-02-29 | 2013-09-06 | 昭和電工株式会社 | エレクトロルミネッセント素子、エレクトロルミネッセント素子の製造方法、表示装置および照明装置 |
| KR101367276B1 (ko) | 2012-02-29 | 2014-03-03 | 주식회사 맥사이언스 | 유기발광패널 및 이를 포함하는 조명장치 |
| JP5902312B2 (ja) * | 2012-05-31 | 2016-04-13 | エルジー・ケム・リミテッド | 有機発光素子およびその製造方法 |
| KR101407590B1 (ko) * | 2012-11-19 | 2014-06-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
| DE102012221191B4 (de) * | 2012-11-20 | 2022-03-17 | Pictiva Displays International Limited | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| US8809149B2 (en) * | 2012-12-12 | 2014-08-19 | Globalfoundries Inc. | High density serial capacitor device and methods of making such a capacitor device |
| JP2015050157A (ja) | 2013-09-04 | 2015-03-16 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス照明装置 |
| US9117785B2 (en) | 2013-11-22 | 2015-08-25 | Samsung Display Co., Ltd. | Display device and method of manufacturing the same |
| TWI563704B (en) * | 2013-12-31 | 2016-12-21 | Ind Tech Res Inst | Light emitting diode |
| KR102212666B1 (ko) | 2014-06-27 | 2021-02-05 | 엘지이노텍 주식회사 | 발광소자 |
| CN106252525B (zh) * | 2016-08-26 | 2018-03-27 | 京东方科技集团股份有限公司 | Oled器件及制作方法、显示面板以及显示装置 |
| CN106653819B (zh) * | 2017-02-17 | 2020-02-14 | 京东方科技集团股份有限公司 | 阵列基板和显示装置 |
| CN109390351B (zh) * | 2017-08-02 | 2021-01-22 | 京东方科技集团股份有限公司 | 布线结构及其制备方法、oled阵列基板、显示装置 |
| KR102392708B1 (ko) * | 2017-09-25 | 2022-04-29 | 엘지디스플레이 주식회사 | 보조 전극을 포함하는 디스플레이 장치 |
| JP7132779B2 (ja) * | 2018-07-18 | 2022-09-07 | 株式会社ジャパンディスプレイ | 表示装置及びアレイ基板 |
| US20220209166A1 (en) * | 2019-04-11 | 2022-06-30 | Sharp Kabushiki Kaisha | Light-emitting element and display device |
| US11588137B2 (en) | 2019-06-05 | 2023-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, display device, input/output device, and data processing device |
| US11659758B2 (en) | 2019-07-05 | 2023-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Display unit, display module, and electronic device |
| WO2021009587A1 (ja) | 2019-07-12 | 2021-01-21 | 株式会社半導体エネルギー研究所 | 機能パネル、表示装置、入出力装置、情報処理装置 |
| WO2021069999A1 (ja) | 2019-10-11 | 2021-04-15 | 株式会社半導体エネルギー研究所 | 機能パネル、表示装置、入出力装置、情報処理装置 |
| US12274144B2 (en) * | 2019-10-21 | 2025-04-08 | Sharp Kabushiki Kaisha | Light-emitting device and method of manufacturing light-emitting device capable of restraining the expansion of dark spots |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2666228B2 (ja) * | 1991-10-30 | 1997-10-22 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| JP2755281B2 (ja) | 1992-12-28 | 1998-05-20 | 富士電機株式会社 | 薄膜太陽電池およびその製造方法 |
| JPH0794285A (ja) | 1993-09-27 | 1995-04-07 | Midori Mark:Kk | エレクトロルミネッセンス |
| TW364275B (en) | 1996-03-12 | 1999-07-11 | Idemitsu Kosan Co | Organic electroluminescent element and organic electroluminescent display device |
| US5905275A (en) * | 1996-06-17 | 1999-05-18 | Kabushiki Kaisha Toshiba | Gallium nitride compound semiconductor light-emitting device |
| EP1086400B1 (en) | 1999-03-23 | 2006-03-01 | Koninklijke Philips Electronics N.V. | Display device and method of manufacturing such a display device |
| US6208791B1 (en) | 1999-04-19 | 2001-03-27 | Gemfire Corporation | Optically integrating pixel microstructure |
| TW511298B (en) | 1999-12-15 | 2002-11-21 | Semiconductor Energy Lab | EL display device |
| JP4434411B2 (ja) | 2000-02-16 | 2010-03-17 | 出光興産株式会社 | アクティブ駆動型有機ｅｌ発光装置およびその製造方法 |
| TW461228B (en) * | 2000-04-26 | 2001-10-21 | Ritdisplay Corp | Method to manufacture the non-photosensitive polyimide pixel definition layer of organic electro-luminescent display panel |
| US6608449B2 (en) | 2000-05-08 | 2003-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Luminescent apparatus and method of manufacturing the same |
| JP4713010B2 (ja) | 2000-05-08 | 2011-06-29 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| US6630785B1 (en) * | 2000-05-30 | 2003-10-07 | Ritdisplay Corporation | Surface treatment process for fabricating a panel of an organic light emitting device |
| US6348359B1 (en) * | 2000-09-22 | 2002-02-19 | Eastman Kodak Company | Cathode contact structures in organic electroluminescent devices |
| JP2002280167A (ja) | 2001-03-16 | 2002-09-27 | Pioneer Electronic Corp | 有機ｅｌ表示パネル |
| SG194237A1 (en) | 2001-12-05 | 2013-11-29 | Semiconductor Energy Lab | Organic semiconductor element |
| SG143063A1 (en) * | 2002-01-24 | 2008-06-27 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| EP1343206B1 (en) | 2002-03-07 | 2016-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus |
| JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
| JP3980918B2 (ja) * | 2002-03-28 | 2007-09-26 | 株式会社東芝 | アクティブマトリクス基板及びその製造方法、表示装置 |
| JP4047631B2 (ja) * | 2002-05-28 | 2008-02-13 | エルピーダメモリ株式会社 | 王冠構造のキャパシタを有する半導体集積回路装置およびその製造方法 |
| JP4290953B2 (ja) * | 2002-09-26 | 2009-07-08 | 奇美電子股▲ふん▼有限公司 | 画像表示装置、有機ｅｌ素子および画像表示装置の製造方法 |
| JP2004134282A (ja) | 2002-10-11 | 2004-04-30 | Matsushita Electric Ind Co Ltd | 照明装置及びそれを用いた画像読取装置 |
| TWI313069B (en) * | 2002-11-08 | 2009-08-01 | Epistar Corporatio | Light emitting diode and method of making the same |
| JP4027914B2 (ja) * | 2004-05-21 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 照明装置及びそれを用いた機器 |
| US7733441B2 (en) * | 2004-06-03 | 2010-06-08 | Semiconductor Energy Labortory Co., Ltd. | Organic electroluminescent lighting system provided with an insulating layer containing fluorescent material |
| JP4646702B2 (ja) | 2004-06-03 | 2011-03-09 | 株式会社半導体エネルギー研究所 | 照明装置及びその作製方法 |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101841004A (zh) | 2010-09-22 |
| US20100006882A1 (en) | 2010-01-14 |
| CN1717137A (zh) | 2006-01-04 |
| US20130001635A1 (en) | 2013-01-03 |
| US8143629B2 (en) | 2012-03-27 |
| US7692199B2 (en) | 2010-04-06 |
| US20050258436A1 (en) | 2005-11-24 |
| CN101841004B (zh) | 2014-07-09 |
| JP2005332773A (ja) | 2005-12-02 |
| US8541790B2 (en) | 2013-09-24 |
| CN1717137B (zh) | 2010-06-23 |
| US8269225B2 (en) | 2012-09-18 |
| US20120119251A1 (en) | 2012-05-17 |
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