JP4020990B2 - パワー半導体モジュール及びその製造方法 - Google Patents

パワー半導体モジュール及びその製造方法 Download PDF

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Publication number
JP4020990B2
JP4020990B2 JP20858596A JP20858596A JP4020990B2 JP 4020990 B2 JP4020990 B2 JP 4020990B2 JP 20858596 A JP20858596 A JP 20858596A JP 20858596 A JP20858596 A JP 20858596A JP 4020990 B2 JP4020990 B2 JP 4020990B2
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JP
Japan
Prior art keywords
contact plunger
main connection
contact
power semiconductor
semiconductor module
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP20858596A
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English (en)
Japanese (ja)
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JPH09107068A (ja
Inventor
ファーラー クルト
フレイ トニー
ケーゼル ヘルムート
シュタインルック フェルディナント
ツェーリンガー レイモント
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エイビービー リサーチ リミテッド
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Publication of JPH09107068A publication Critical patent/JPH09107068A/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Die Bonding (AREA)
JP20858596A 1995-08-17 1996-08-07 パワー半導体モジュール及びその製造方法 Expired - Lifetime JP4020990B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19530264A DE19530264A1 (de) 1995-08-17 1995-08-17 Leistungshalbleitermodul
DE19530264:8 1995-08-17

Publications (2)

Publication Number Publication Date
JPH09107068A JPH09107068A (ja) 1997-04-22
JP4020990B2 true JP4020990B2 (ja) 2007-12-12

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JP20858596A Expired - Lifetime JP4020990B2 (ja) 1995-08-17 1996-08-07 パワー半導体モジュール及びその製造方法

Country Status (6)

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US (1) US5705853A (ref)
EP (1) EP0762496B1 (ref)
JP (1) JP4020990B2 (ref)
CN (1) CN1089493C (ref)
DE (2) DE19530264A1 (ref)
IN (1) IN192638B (ref)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100214560B1 (ko) * 1997-03-05 1999-08-02 구본준 반도체 멀티칩 모듈
DE19726534A1 (de) * 1997-06-23 1998-12-24 Asea Brown Boveri Leistungshalbleitermodul mit geschlossenen Submodulen
GB9725960D0 (en) * 1997-12-08 1998-02-04 Westinghouse Brake & Signal Encapsulating semiconductor chips
DE19834800C1 (de) * 1998-08-01 1999-10-28 Semikron Elektronik Gmbh Leistungshalbleiterschaltungsanordnung
JP3955396B2 (ja) * 1998-09-17 2007-08-08 株式会社ルネサステクノロジ 半導体サージ吸収素子
DE19843309A1 (de) * 1998-09-22 2000-03-23 Asea Brown Boveri Kurzschlussfestes IGBT Modul
DE19903245A1 (de) 1999-01-27 2000-08-03 Asea Brown Boveri Leistungshalbleitermodul
US6018194A (en) * 1999-06-07 2000-01-25 Lucent Technologies Inc. Transistor clamping fixture
EP1209742A1 (de) * 2000-11-22 2002-05-29 ABB Schweiz AG Hochleistungshalbleitermodul sowie Anwendung eines solchen Hochleistungshalbleitermoduls
DE10064194B4 (de) * 2000-12-22 2006-12-07 Infineon Technologies Ag Leistungshalbleiter-Modul und Kühlkörper zur Aufnahme des Leistungshalbleiter-Moduls
EP1263046A1 (de) * 2001-06-01 2002-12-04 ABB Schweiz AG Kontaktanordnung
EP1263045A1 (en) * 2001-06-01 2002-12-04 ABB Schweiz AG High power semiconductor module
DE10149886A1 (de) * 2001-10-10 2003-04-30 Eupec Gmbh & Co Kg Leistunghalbleitermodul
EP1318545A1 (de) * 2001-12-06 2003-06-11 Abb Research Ltd. Leistungshalbleiter-Submodul und Leistungshalbleiter-Modul
EP1318547B1 (de) 2001-12-06 2013-04-17 ABB Research Ltd. Leistungshalbleiter-Modul
DE10244748A1 (de) * 2002-09-25 2003-09-11 Siemens Ag Leistungshalbleitermodul und Verfahren zur Herstellung desselben
DE10326176A1 (de) * 2003-06-10 2005-01-05 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Leistungshalbleitermodul
DE10352671A1 (de) 2003-11-11 2005-06-23 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Leistungsmodul
DE102004018476B4 (de) * 2004-04-16 2009-06-18 Infineon Technologies Ag Leistungshalbleiteranordnung mit kontaktierender Folie und Anpressvorrichtung
EP1866830B1 (en) * 2005-03-30 2008-12-24 Nxp B.V. A portable object connectable package
DE102007003587B4 (de) * 2007-01-24 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Druckkörper
KR101225322B1 (ko) * 2008-03-20 2013-01-23 에이비비 리써치 리미티드 전압 소스 컨버터
KR101243515B1 (ko) 2008-03-20 2013-03-20 에이비비 테크놀로지 아게 전압 소스 컨버터
DE102008033852B3 (de) * 2008-07-19 2009-09-10 Semikron Elektronik Gmbh & Co. Kg Anordnung mit einem Leistungshalbleitermodul und Verfahren zu deren Herstellung
US20100038774A1 (en) * 2008-08-18 2010-02-18 General Electric Company Advanced and integrated cooling for press-packages
US8120915B2 (en) * 2008-08-18 2012-02-21 General Electric Company Integral heat sink with spiral manifolds
US7817422B2 (en) * 2008-08-18 2010-10-19 General Electric Company Heat sink and cooling and packaging stack for press-packages
JP4634498B2 (ja) * 2008-11-28 2011-02-16 三菱電機株式会社 電力用半導体モジュール
US8742814B2 (en) 2009-07-15 2014-06-03 Yehuda Binder Sequentially operated modules
US8602833B2 (en) 2009-08-06 2013-12-10 May Patents Ltd. Puzzle with conductive path
US8218320B2 (en) 2010-06-29 2012-07-10 General Electric Company Heat sinks with C-shaped manifolds and millichannel cooling
US9019718B2 (en) 2011-08-26 2015-04-28 Littlebits Electronics Inc. Modular electronic building systems with magnetic interconnections and methods of using the same
US9597607B2 (en) 2011-08-26 2017-03-21 Littlebits Electronics Inc. Modular electronic building systems with magnetic interconnections and methods of using the same
US11330714B2 (en) 2011-08-26 2022-05-10 Sphero, Inc. Modular electronic building systems with magnetic interconnections and methods of using the same
WO2013057172A1 (en) 2011-10-21 2013-04-25 Abb Technology Ag Power semiconducter module and power semiconductor module assembly with multiple power semiconducter modules
FR2994333B1 (fr) 2012-08-03 2014-08-01 Ge Energy Power Conversion Technology Ltd Dispositif electronique semi-conducteur destine a etre monte dans un ensemble a empilement presse et ensemble a empilement presse comportant un tel dispositif
US8987876B2 (en) * 2013-03-14 2015-03-24 General Electric Company Power overlay structure and method of making same
JP6043238B2 (ja) * 2013-04-26 2016-12-14 株式会社豊田中央研究所 半導体モジュール
JP5819880B2 (ja) * 2013-05-08 2015-11-24 本田技研工業株式会社 平行度調整装置および平行度調整方法
JP6480098B2 (ja) * 2013-10-31 2019-03-06 三菱電機株式会社 半導体装置
JP6189798B2 (ja) * 2014-07-08 2017-08-30 日立オートモティブシステムズ株式会社 電力変換装置
CN105336723B (zh) * 2014-07-28 2018-09-14 通用电气公司 半导体模块、半导体模块组件及半导体装置
US10147699B2 (en) * 2015-05-26 2018-12-04 Mitsubishi Electric Corporation Pressure contact type semiconductor apparatus
DE112016007205B4 (de) 2016-09-09 2025-09-11 Mitsubishi Electric Corporation Halbleitervorrichtung
JP6692438B2 (ja) * 2016-09-13 2020-05-13 三菱電機株式会社 半導体モジュール
JP6688198B2 (ja) * 2016-09-27 2020-04-28 日本発條株式会社 圧接ユニットおよび電力用半導体装置
CN108428677B (zh) * 2018-03-16 2020-09-11 全球能源互联网研究院有限公司 一种压接型igbt弹性压装结构及压接型igbt封装结构
EP3696854A1 (de) * 2019-02-13 2020-08-19 Siemens Aktiengesellschaft Leistungshalbleitermodul und verfahren zur herstellung eines leistungshalbleitermoduls
US11616844B2 (en) 2019-03-14 2023-03-28 Sphero, Inc. Modular electronic and digital building systems and methods of using the same
EP3926670A1 (de) 2020-06-15 2021-12-22 Siemens Aktiengesellschaft Leistungshalbleitermodul mit zumindest einem leistungshalbleiterelement

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA804796A (en) * 1969-01-21 Emeis Reimer Encapsulated electronic semiconductor device
US3064341A (en) * 1956-12-26 1962-11-20 Ibm Semiconductor devices
BE633287A (ref) * 1962-06-09
DE1295696B (de) * 1963-03-06 1969-05-22 Walter Brandt Gmbh Anordnung mit zwischen Kuehlplatten liegenden Halbleiterbauelementen
GB1054422A (ref) * 1963-03-16 1900-01-01
GB1055673A (en) * 1964-03-31 1967-01-18 Ckd Praha Narodnt Podnik Improved electrode connections in a semi-conductor housing
US3972012A (en) * 1974-12-23 1976-07-27 Rca Corporation Apparatus for mounting a diode in a microwave circuit
US4179802A (en) * 1978-03-27 1979-12-25 International Business Machines Corporation Studded chip attachment process
DE2832040A1 (de) * 1978-07-21 1980-01-31 Licentia Gmbh Eingehaeuster, mit licht zuendbarer thyristor
US4278990A (en) * 1979-03-19 1981-07-14 General Electric Company Low thermal resistance, low stress semiconductor package
DE2936816A1 (de) * 1979-08-17 1981-03-26 BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau Buerstenkontakt fuer leistungshalbleiterbauelemente
US4574299A (en) * 1981-03-02 1986-03-04 General Electric Company Thyristor packaging system
US4646131A (en) * 1983-01-28 1987-02-24 Mitsubishi Denki Kabushiki Kaisha Rectifier device
DE3322593A1 (de) * 1983-06-23 1985-01-10 Klöckner-Moeller Elektrizitäts GmbH, 5300 Bonn Halbleiteranordnung und verfahren zu ihrer herstellung
JPS6089946A (ja) * 1983-10-24 1985-05-20 Fujitsu Ltd 半導体素子の冷却構造
JPS60150670A (ja) * 1984-01-17 1985-08-08 Mitsubishi Electric Corp 半導体装置
JPS61113249A (ja) * 1984-11-08 1986-05-31 Mitsubishi Electric Corp 半導体装置
US5098305A (en) * 1987-05-21 1992-03-24 Cray Research, Inc. Memory metal electrical connector
JPH0732218B2 (ja) * 1988-06-10 1995-04-10 日本電気株式会社 集積回路用冷却装置
US5016088A (en) * 1989-11-02 1991-05-14 Institut Imeni V. I. Lenina Unit of semiconductor elements
DE59107655D1 (de) * 1991-02-22 1996-05-09 Asea Brown Boveri Abschaltbares Hochleistungs-Halbleiterbauelement
JP2940328B2 (ja) * 1993-02-05 1999-08-25 富士電機株式会社 電力用半導体素子
DE4314913C1 (de) * 1993-05-05 1994-08-25 Siemens Ag Verfahren zur Herstellung eines Halbleiterbauelements mit einer Kontaktstrukturierung für vertikale Kontaktierung mit weiteren Halbleiterbauelementen

Also Published As

Publication number Publication date
JPH09107068A (ja) 1997-04-22
IN192638B (ref) 2004-05-08
EP0762496B1 (de) 2005-07-13
EP0762496A3 (de) 1999-05-06
CN1089493C (zh) 2002-08-21
EP0762496A2 (de) 1997-03-12
DE59611245D1 (de) 2005-08-18
US5705853A (en) 1998-01-06
CN1149202A (zh) 1997-05-07
DE19530264A1 (de) 1997-02-20

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