JP4016419B2 - シリコン膜形成用組成物およびシリコン膜の形成方法 - Google Patents

シリコン膜形成用組成物およびシリコン膜の形成方法 Download PDF

Info

Publication number
JP4016419B2
JP4016419B2 JP2002243004A JP2002243004A JP4016419B2 JP 4016419 B2 JP4016419 B2 JP 4016419B2 JP 2002243004 A JP2002243004 A JP 2002243004A JP 2002243004 A JP2002243004 A JP 2002243004A JP 4016419 B2 JP4016419 B2 JP 4016419B2
Authority
JP
Japan
Prior art keywords
silicon
silicon film
film
forming
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002243004A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004087546A5 (enExample
JP2004087546A (ja
Inventor
安生 松木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2002243004A priority Critical patent/JP4016419B2/ja
Application filed by JSR Corp filed Critical JSR Corp
Priority to PCT/JP2003/010380 priority patent/WO2004019393A1/ja
Priority to AU2003262236A priority patent/AU2003262236A1/en
Priority to EP03792692A priority patent/EP1551057B1/en
Priority to CNB038014351A priority patent/CN100423197C/zh
Priority to US10/515,728 priority patent/US7473443B2/en
Priority to KR1020047005943A priority patent/KR20050026692A/ko
Priority to DE60328302T priority patent/DE60328302D1/de
Priority to TW092123202A priority patent/TW200418724A/zh
Publication of JP2004087546A publication Critical patent/JP2004087546A/ja
Publication of JP2004087546A5 publication Critical patent/JP2004087546A5/ja
Application granted granted Critical
Publication of JP4016419B2 publication Critical patent/JP4016419B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Paints Or Removers (AREA)
JP2002243004A 2002-08-23 2002-08-23 シリコン膜形成用組成物およびシリコン膜の形成方法 Expired - Fee Related JP4016419B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2002243004A JP4016419B2 (ja) 2002-08-23 2002-08-23 シリコン膜形成用組成物およびシリコン膜の形成方法
DE60328302T DE60328302D1 (de) 2002-08-23 2003-08-15 Zusammensetzung zum bilden eines siliziumfilms und verfahren zum bilden eines siliziumfilms
EP03792692A EP1551057B1 (en) 2002-08-23 2003-08-15 Composition for forming a silicon film and method for forming a silicon film
CNB038014351A CN100423197C (zh) 2002-08-23 2003-08-15 硅膜形成用组合物和硅膜的形成方法
US10/515,728 US7473443B2 (en) 2002-08-23 2003-08-15 Composition for forming silicon film and method for forming silicon film
KR1020047005943A KR20050026692A (ko) 2002-08-23 2003-08-15 실리콘막 형성용 조성물 및 실리콘막의 형성 방법
PCT/JP2003/010380 WO2004019393A1 (ja) 2002-08-23 2003-08-15 シリコン膜形成用組成物およびシリコン膜の形成方法
AU2003262236A AU2003262236A1 (en) 2002-08-23 2003-08-15 Composition for forming silicon film and method for forming silicon film
TW092123202A TW200418724A (en) 2002-08-23 2003-08-22 Composition for forming silicon film and method for forming silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002243004A JP4016419B2 (ja) 2002-08-23 2002-08-23 シリコン膜形成用組成物およびシリコン膜の形成方法

Publications (3)

Publication Number Publication Date
JP2004087546A JP2004087546A (ja) 2004-03-18
JP2004087546A5 JP2004087546A5 (enExample) 2005-05-26
JP4016419B2 true JP4016419B2 (ja) 2007-12-05

Family

ID=32051879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002243004A Expired - Fee Related JP4016419B2 (ja) 2002-08-23 2002-08-23 シリコン膜形成用組成物およびシリコン膜の形成方法

Country Status (1)

Country Link
JP (1) JP4016419B2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2701182A2 (en) 2010-12-10 2014-02-26 Teijin Limited Semiconductor laminate, semiconductor device, method for producing semiconductor laminate, and method for manufacturing semiconductor device
US10535788B2 (en) 2012-07-20 2020-01-14 Asahi Kasei Kabushiki Kaisha Semiconductor film and semiconductor element

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186320A (ja) * 2002-12-02 2004-07-02 Jsr Corp シリコン膜形成用組成物および太陽電池
JP4761041B2 (ja) * 2005-02-23 2011-08-31 ソニー株式会社 シリコン膜の形成方法
JP4725735B2 (ja) * 2006-08-25 2011-07-13 Ｊｓｒ株式会社 ガスバリア用シリカ膜積層フィルムの製造方法
US7892872B2 (en) * 2007-01-03 2011-02-22 Nanogram Corporation Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates
DE102007050288A1 (de) * 2007-10-18 2009-04-23 Otto Hauser Halbleiterbauteil
JP2011192908A (ja) * 2010-03-16 2011-09-29 Toshiba Corp ポリシリコン膜の製造方法、太陽電池及び電子デバイス
US8895962B2 (en) * 2010-06-29 2014-11-25 Nanogram Corporation Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods
JP6099304B2 (ja) * 2010-12-10 2017-03-22 帝人株式会社 半導体積層体、半導体デバイス、及びそれらの製造方法
JP5253561B2 (ja) * 2011-02-04 2013-07-31 帝人株式会社 半導体デバイスの製造方法、半導体デバイス、並びに分散体
JP2013105991A (ja) * 2011-11-16 2013-05-30 Teijin Ltd 半導体積層体、半導体デバイス、及びそれらの製造方法
JP5921088B2 (ja) * 2011-05-27 2016-05-24 帝人株式会社 未焼結シリコン粒子膜及び半導体シリコン膜、並びにそれらの製造方法
WO2012141292A1 (ja) * 2011-04-15 2012-10-18 昭和電工株式会社 シリコン膜の製造方法
JP5676363B2 (ja) * 2011-05-26 2015-02-25 国立大学法人広島大学 光起電力素子およびその製造方法
CA2752844A1 (en) * 2011-09-19 2013-03-19 Hydro-Quebec Method for preparing a particulate of si or siox-based anode material, and material thus obtained
CN104205293B (zh) * 2012-03-30 2017-09-12 帝人株式会社 半导体装置的制造方法
CA3004058A1 (en) * 2015-11-03 2017-05-11 Kaneka Americas Holding, Inc. Control of nanoparticles dispersion stability through dielectric constant tuning, and determiniation of intrinsic dielectric constant of surfactant-free nanoparticles
SE540184C2 (en) 2016-07-29 2018-04-24 Exeger Operations Ab A light absorbing layer and a photovoltaic device including a light absorbing layer
WO2018021952A1 (en) 2016-07-29 2018-02-01 Exeger Operations Ab A light absorbing layer and a photovoltaic device including a light absorbing layer
EP3652763B1 (en) 2017-07-12 2021-03-31 Exeger Operations AB A photovoltaic device having a light absorbing layer including a plurality of grains of a doped semiconducting material
US10535527B2 (en) * 2017-07-13 2020-01-14 Applied Materials, Inc. Methods for depositing semiconductor films

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2701182A2 (en) 2010-12-10 2014-02-26 Teijin Limited Semiconductor laminate, semiconductor device, method for producing semiconductor laminate, and method for manufacturing semiconductor device
US10535788B2 (en) 2012-07-20 2020-01-14 Asahi Kasei Kabushiki Kaisha Semiconductor film and semiconductor element
US10944018B2 (en) 2012-07-20 2021-03-09 Asahi Kasei Kabushiki Kaisha Semiconductor film and semiconductor element

Also Published As

Publication number Publication date
JP2004087546A (ja) 2004-03-18

Similar Documents

Publication Publication Date Title
JP4016419B2 (ja) シリコン膜形成用組成物およびシリコン膜の形成方法
EP1284306B1 (en) Silane composition, silicon film forming method and solar cell production method
US7473443B2 (en) Composition for forming silicon film and method for forming silicon film
KR101299315B1 (ko) 고차 실란 조성물 및 막이 부착된 기판의 제조 방법
JP3926987B2 (ja) シリコン膜の形成方法
JP2004186320A (ja) シリコン膜形成用組成物および太陽電池
WO2000059044A1 (en) Method of manufacturing solar cell
JPWO2000058409A1 (ja) コーティング組成物
JP2005332913A (ja) 太陽電池用シリコン膜の形成方法および太陽電池
JP2003171556A (ja) シリコン膜の形成方法およびそのための組成物
JP2004204094A (ja) シリコン膜形成用組成物およびシリコン膜の形成方法
JP2003055556A (ja) シリコン膜またはシリコン酸化膜の形成方法およびそのための組成物
JP4462394B2 (ja) シリコン膜のパターン形成方法
JP4518222B2 (ja) シリルシクロペンタシランおよびその用途
JP2003124486A (ja) 太陽電池の製造方法およびそのための組成物
JP4867102B2 (ja) 多結晶シリコン膜の形成方法、およびそのための組成物
JP4748288B2 (ja) スピロ［４．４］ノナシランを含有する組成物
JP4617795B2 (ja) シリコン膜の形成方法
JP2001011184A (ja) ケイ素ポリマーおよびその製造方法
JP2006310345A (ja) 積層膜の形成方法
JP2001089572A (ja) リン変性ケイ素ポリマー、その製法、それを含有する組成物ならびにリン変性シリコンの製法
JP2001058996A (ja) ノルボルニル基を持つシリコン化合物、コーティング組成物およびシリコン膜の製造法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040728

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040730

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070611

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070803

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070827

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070909

R150 Certificate of patent or registration of utility model

Ref document number: 4016419

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100928

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100928

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100928

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110928

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110928

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120928

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120928

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130928

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees