JP4004765B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4004765B2
JP4004765B2 JP2001313318A JP2001313318A JP4004765B2 JP 4004765 B2 JP4004765 B2 JP 4004765B2 JP 2001313318 A JP2001313318 A JP 2001313318A JP 2001313318 A JP2001313318 A JP 2001313318A JP 4004765 B2 JP4004765 B2 JP 4004765B2
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Japan
Prior art keywords
semiconductor film
film
light source
crystalline semiconductor
lamp
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Expired - Fee Related
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JP2001313318A
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English (en)
Japanese (ja)
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JP2002190452A (ja
JP2002190452A5 (enExample
Inventor
浩二 大力
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001313318A priority Critical patent/JP4004765B2/ja
Publication of JP2002190452A publication Critical patent/JP2002190452A/ja
Publication of JP2002190452A5 publication Critical patent/JP2002190452A5/ja
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Publication of JP4004765B2 publication Critical patent/JP4004765B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001313318A 2000-10-10 2001-10-10 半導体装置の作製方法 Expired - Fee Related JP4004765B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001313318A JP4004765B2 (ja) 2000-10-10 2001-10-10 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-309887 2000-10-10
JP2000309887 2000-10-10
JP2001313318A JP4004765B2 (ja) 2000-10-10 2001-10-10 半導体装置の作製方法

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JP2002190452A JP2002190452A (ja) 2002-07-05
JP2002190452A5 JP2002190452A5 (enExample) 2005-06-23
JP4004765B2 true JP4004765B2 (ja) 2007-11-07

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JP2001313318A Expired - Fee Related JP4004765B2 (ja) 2000-10-10 2001-10-10 半導体装置の作製方法

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100962054B1 (ko) 2000-12-05 2010-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
JP5130463B2 (ja) * 2001-03-28 2013-01-30 独立行政法人産業技術総合研究所 薄膜半導体素子の製造方法
KR101025444B1 (ko) * 2003-10-28 2011-03-30 엘지디스플레이 주식회사 급속열처리장치 및 이를 이용한 이온활성화 방법
JP5294231B2 (ja) * 2007-03-26 2013-09-18 国立大学法人 奈良先端科学技術大学院大学 薄膜トランジスタの製造方法
JP5465828B2 (ja) * 2007-10-01 2014-04-09 株式会社日立国際電気 基板処理装置及び半導体デバイスの製造方法
JP5374109B2 (ja) * 2008-10-17 2013-12-25 株式会社アルバック 加熱真空処理方法
WO2010098427A1 (ja) 2009-02-27 2010-09-02 株式会社アルバック 真空加熱装置、真空加熱処理方法
KR101729724B1 (ko) * 2014-12-26 2017-04-25 주식회사 비아트론 복수 열원을 포함하는 코팅층 열처리 장치 및 이를 이용한 열처리 방법

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JP2002190452A (ja) 2002-07-05

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