JP3992817B2 - 半導体光電変換装置の製造方法 - Google Patents

半導体光電変換装置の製造方法 Download PDF

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Publication number
JP3992817B2
JP3992817B2 JP04081898A JP4081898A JP3992817B2 JP 3992817 B2 JP3992817 B2 JP 3992817B2 JP 04081898 A JP04081898 A JP 04081898A JP 4081898 A JP4081898 A JP 4081898A JP 3992817 B2 JP3992817 B2 JP 3992817B2
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Japan
Prior art keywords
gate electrode
film
oxide film
impurity region
region
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JP04081898A
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Japanese (ja)
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JPH11238901A5 (https=
JPH11238901A (ja
Inventor
忠男 赤嶺
恵二 佐藤
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Seiko Instruments Inc
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Seiko Instruments Inc
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JP04081898A 1998-02-23 1998-02-23 半導体光電変換装置の製造方法 Expired - Fee Related JP3992817B2 (ja)

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JP04081898A JP3992817B2 (ja) 1998-02-23 1998-02-23 半導体光電変換装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04081898A JP3992817B2 (ja) 1998-02-23 1998-02-23 半導体光電変換装置の製造方法

Publications (3)

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JPH11238901A JPH11238901A (ja) 1999-08-31
JPH11238901A5 JPH11238901A5 (https=) 2005-07-14
JP3992817B2 true JP3992817B2 (ja) 2007-10-17

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JP04081898A Expired - Fee Related JP3992817B2 (ja) 1998-02-23 1998-02-23 半導体光電変換装置の製造方法

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JPH11238901A (ja) 1999-08-31

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