JP3987033B2 - 誘導結合型プラズマ発生装置のアンテナ構造 - Google Patents
誘導結合型プラズマ発生装置のアンテナ構造 Download PDFInfo
- Publication number
- JP3987033B2 JP3987033B2 JP2003518235A JP2003518235A JP3987033B2 JP 3987033 B2 JP3987033 B2 JP 3987033B2 JP 2003518235 A JP2003518235 A JP 2003518235A JP 2003518235 A JP2003518235 A JP 2003518235A JP 3987033 B2 JP3987033 B2 JP 3987033B2
- Authority
- JP
- Japan
- Prior art keywords
- antenna
- chamber
- antennas
- inductively coupled
- coupled plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Description
20 アンテナ
30 アンテナ
A 外部アンテナ
A1〜A4 L字形アンテナ
B1,B2 長方形ループ型アンテナ
B 内部アンテナ
C チャンバ
D 接地ジャンパ
E 電源ブロック
G 接地端
P 電源端
Claims (4)
- 一端にRF電源が印加される電源端が形成され,他端は接地される少なくとも二つのループ型アンテナが電気的に並列連結され、一方のアンテナの電源端と他方のアンテナの接地端はアンテナの中心に対して対称位置に配置され、チャンバ上に設置される誘導結合型プラズマ発生装置のアンテナにおいて,
前記各アンテナはほぼ同一面状に配置され,前記各アンテナの電源端と接地端は前記チャンバから遠い位置に配置され,各アンテナの前記各端部を除く中間部は前記チャンバに近い位置にくるよう相互平行に交差設置されることを特徴とする誘導結合型プラズマ発生装置のアンテナ構造。 - 前記各ループ型アンテナは,上下に交差設置されることを特徴とする請求項1に記載の誘導結合型プラズマ発生装置のアンテナ構造。
- 前記各ループ型アンテナは,内外に同心円上で交差して設置されることを特徴とする請求項1に記載の誘導結合型プラズマ発生装置のアンテナ構造。
- 誘導結合型プラズマ発生装置のアンテナ構造であって,
前記アンテナは,一端にはRF電源が印加される電源端が形成され,他端には接地された接地端が形成され,
前記アンテナはそれぞれ,方形よりなる内部アンテナと外部アンテナが並列連結されて構成され,
前記内部アンテナは,並列結合された2つの方形ループ型アンテナが2層に対称に重畳設置され,
前記外部アンテナは2つの辺を有するL字形よりなる並列結合された4つのアンテナが1辺ずつ重畳されるよう2層に対称設置され,
前記各アンテナの電源端はチャンバから遠い位置に配置され,前記各アンテナの接地端はチャンバから近い位置にくるように,配置されることを特徴とする誘導結合型プラズマ発生装置のアンテナ構造。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2020010023128U KR200253559Y1 (ko) | 2001-07-30 | 2001-07-30 | 회전방향으로 균일한 플라즈마 밀도를 발생시키는유도결합형 플라즈마 발생장치의 안테나구조 |
PCT/KR2002/001407 WO2003013198A1 (en) | 2001-07-30 | 2002-07-26 | Antenna structure for inductively coupled plasma generator |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004537839A JP2004537839A (ja) | 2004-12-16 |
JP3987033B2 true JP3987033B2 (ja) | 2007-10-03 |
Family
ID=19708831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003518235A Expired - Fee Related JP3987033B2 (ja) | 2001-07-30 | 2002-07-26 | 誘導結合型プラズマ発生装置のアンテナ構造 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7079085B2 (ja) |
EP (1) | EP1437035A4 (ja) |
JP (1) | JP3987033B2 (ja) |
KR (1) | KR200253559Y1 (ja) |
CN (1) | CN1230043C (ja) |
WO (1) | WO2003013198A1 (ja) |
Families Citing this family (33)
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KR100420533B1 (ko) * | 2001-12-05 | 2004-03-02 | 주성엔지니어링(주) | 플라즈마 공정장치 및 이를 이용한 플라즈마 식각방법 |
KR100478106B1 (ko) * | 2001-12-10 | 2005-03-24 | (주)울텍 | 고밀도 플라즈마 발생 장치 |
KR100488362B1 (ko) * | 2002-05-20 | 2005-05-11 | 주식회사 플라즈마트 | 저주파형 유도결합 플라즈마 발생장치 |
KR100488360B1 (ko) * | 2002-07-29 | 2005-05-11 | 주식회사 플라즈마트 | 평판표시장치의 표면처리를 위한 유도결합형 플라즈마발생장치의 안테나구조 |
KR100486712B1 (ko) * | 2002-09-04 | 2005-05-03 | 삼성전자주식회사 | 복층 코일 안테나를 구비한 유도결합 플라즈마 발생장치 |
KR100625319B1 (ko) | 2005-02-03 | 2006-09-20 | 세메스 주식회사 | 유도 결합 플라즈마 처리 장치 |
KR100824974B1 (ko) * | 2006-08-17 | 2008-04-28 | (주)아이씨디 | 플라즈마 처리장치의 안테나 |
CN103347360B (zh) * | 2006-11-28 | 2016-01-20 | 莎姆克株式会社 | 等离子处理装置 |
KR101118492B1 (ko) | 2007-02-16 | 2012-03-12 | 램 리써치 코포레이션 | 유도 코일, 플라즈마 발생 장치 및 플라즈마 발생 방법 |
TW200845833A (en) * | 2007-05-01 | 2008-11-16 | Delta Electronics Inc | Plasma generating device |
US8933595B2 (en) | 2007-10-24 | 2015-01-13 | Nassim Haramein | Plasma flow interaction simulator |
US8073094B2 (en) * | 2007-10-24 | 2011-12-06 | Nassim Haramein | Device and method for simulation of magnetohydrodynamics |
US20100060541A1 (en) * | 2008-09-08 | 2010-03-11 | Smartant Telecom Co., Ltd. | Antenna |
KR101029557B1 (ko) * | 2008-11-05 | 2011-04-15 | 주식회사 아토 | 플라즈마 발생 장치 및 플라즈마 처리 장치 |
TWI498053B (zh) * | 2008-12-23 | 2015-08-21 | Ind Tech Res Inst | 電漿激發模組 |
KR101757920B1 (ko) | 2009-10-27 | 2017-07-14 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
JP5592098B2 (ja) | 2009-10-27 | 2014-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
KR101757922B1 (ko) | 2009-10-27 | 2017-07-14 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
KR101757921B1 (ko) | 2009-10-27 | 2017-07-14 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
WO2011133562A2 (en) * | 2010-04-20 | 2011-10-27 | Lam Research Corporation | Methods and apparatus for an induction coil arrangement in a plasma processing system |
JP5851682B2 (ja) * | 2010-09-28 | 2016-02-03 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR101202957B1 (ko) | 2010-10-19 | 2012-11-20 | 주성엔지니어링(주) | 플라즈마 발생용 안테나 및 이를 포함하는 기판처리장치 |
JP5781349B2 (ja) | 2011-03-30 | 2015-09-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN103959920B (zh) | 2011-09-16 | 2016-12-07 | 细美事有限公司 | 天线结构和等离子体生成装置 |
JP2013077715A (ja) * | 2011-09-30 | 2013-04-25 | Tokyo Electron Ltd | 誘導結合プラズマ用アンテナユニットおよび誘導結合プラズマ処理装置 |
US10271416B2 (en) | 2011-10-28 | 2019-04-23 | Applied Materials, Inc. | High efficiency triple-coil inductively coupled plasma source with phase control |
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2001
- 2001-07-30 KR KR2020010023128U patent/KR200253559Y1/ko not_active IP Right Cessation
-
2002
- 2002-07-26 WO PCT/KR2002/001407 patent/WO2003013198A1/en active Application Filing
- 2002-07-26 EP EP02753262A patent/EP1437035A4/en not_active Withdrawn
- 2002-07-26 JP JP2003518235A patent/JP3987033B2/ja not_active Expired - Fee Related
- 2002-07-26 CN CNB028150341A patent/CN1230043C/zh not_active Expired - Fee Related
-
2004
- 2004-01-27 US US10/766,665 patent/US7079085B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2003013198A1 (en) | 2003-02-13 |
EP1437035A4 (en) | 2007-06-20 |
CN1537405A (zh) | 2004-10-13 |
KR200253559Y1 (ko) | 2001-11-22 |
CN1230043C (zh) | 2005-11-30 |
EP1437035A1 (en) | 2004-07-14 |
US7079085B2 (en) | 2006-07-18 |
US20040223579A1 (en) | 2004-11-11 |
JP2004537839A (ja) | 2004-12-16 |
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