JP3979010B2 - 電気光学装置及びプロジェクタ - Google Patents
電気光学装置及びプロジェクタ Download PDFInfo
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- JP3979010B2 JP3979010B2 JP2001007918A JP2001007918A JP3979010B2 JP 3979010 B2 JP3979010 B2 JP 3979010B2 JP 2001007918 A JP2001007918 A JP 2001007918A JP 2001007918 A JP2001007918 A JP 2001007918A JP 3979010 B2 JP3979010 B2 JP 3979010B2
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- 239000010408 film Substances 0.000 claims description 369
- 239000000758 substrate Substances 0.000 claims description 99
- 239000004065 semiconductor Substances 0.000 claims description 63
- 239000010409 thin film Substances 0.000 claims description 19
- 239000003990 capacitor Substances 0.000 description 112
- 239000010410 layer Substances 0.000 description 93
- 238000003860 storage Methods 0.000 description 71
- 239000004973 liquid crystal related substance Substances 0.000 description 64
- 239000011229 interlayer Substances 0.000 description 52
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
- 229920005591 polysilicon Polymers 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000003870 refractory metal Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 239000005368 silicate glass Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000001443 photoexcitation Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001007918A JP3979010B2 (ja) | 2000-03-17 | 2001-01-16 | 電気光学装置及びプロジェクタ |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-77173 | 2000-03-17 | ||
| JP2000077173 | 2000-03-17 | ||
| JP2001007918A JP3979010B2 (ja) | 2000-03-17 | 2001-01-16 | 電気光学装置及びプロジェクタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001330859A JP2001330859A (ja) | 2001-11-30 |
| JP2001330859A5 JP2001330859A5 (enExample) | 2004-12-24 |
| JP3979010B2 true JP3979010B2 (ja) | 2007-09-19 |
Family
ID=26587883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001007918A Expired - Lifetime JP3979010B2 (ja) | 2000-03-17 | 2001-01-16 | 電気光学装置及びプロジェクタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3979010B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6509616B2 (en) * | 2000-09-29 | 2003-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| JP3870897B2 (ja) | 2002-01-07 | 2007-01-24 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP2003307746A (ja) * | 2002-02-12 | 2003-10-31 | Seiko Epson Corp | 電気光学装置及び電子機器 |
| JP4197016B2 (ja) | 2006-07-24 | 2008-12-17 | セイコーエプソン株式会社 | 電気光学装置用基板及び電気光学装置、並びに電子機器 |
| JP4241777B2 (ja) | 2006-07-25 | 2009-03-18 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4967556B2 (ja) * | 2006-09-14 | 2012-07-04 | セイコーエプソン株式会社 | 電気光学装置用基板及び電気光学装置、並びに電子機器 |
| JP5018336B2 (ja) * | 2007-08-22 | 2012-09-05 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP2010054769A (ja) * | 2008-08-28 | 2010-03-11 | Sony Corp | 表示装置、表示装置の製造方法、投射型表示装置および電子機器 |
-
2001
- 2001-01-16 JP JP2001007918A patent/JP3979010B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001330859A (ja) | 2001-11-30 |
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