JP3973934B2 - 高耐圧半導体装置 - Google Patents
高耐圧半導体装置 Download PDFInfo
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- JP3973934B2 JP3973934B2 JP2002072032A JP2002072032A JP3973934B2 JP 3973934 B2 JP3973934 B2 JP 3973934B2 JP 2002072032 A JP2002072032 A JP 2002072032A JP 2002072032 A JP2002072032 A JP 2002072032A JP 3973934 B2 JP3973934 B2 JP 3973934B2
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- 239000004065 semiconductor Substances 0.000 title claims description 28
- 230000004888 barrier function Effects 0.000 claims description 32
- 230000015556 catabolic process Effects 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000007423 decrease Effects 0.000 description 6
- 230000000087 stabilizing effect Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2002072032A JP3973934B2 (ja) | 2002-03-15 | 2002-03-15 | 高耐圧半導体装置 |
Applications Claiming Priority (1)
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JP2002072032A JP3973934B2 (ja) | 2002-03-15 | 2002-03-15 | 高耐圧半導体装置 |
Publications (3)
Publication Number | Publication Date |
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JP2003273359A JP2003273359A (ja) | 2003-09-26 |
JP2003273359A5 JP2003273359A5 (enrdf_load_stackoverflow) | 2005-06-30 |
JP3973934B2 true JP3973934B2 (ja) | 2007-09-12 |
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ID=29202140
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JP2002072032A Expired - Fee Related JP3973934B2 (ja) | 2002-03-15 | 2002-03-15 | 高耐圧半導体装置 |
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JP (1) | JP3973934B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070034941A1 (en) * | 2005-08-15 | 2007-02-15 | International Rectifier Corp. | Deep N diffusion for trench IGBT |
JP2007266133A (ja) * | 2006-03-27 | 2007-10-11 | Toyota Central Res & Dev Lab Inc | 半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1247293B (it) * | 1990-05-09 | 1994-12-12 | Int Rectifier Corp | Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione |
JPH0529628A (ja) * | 1991-07-19 | 1993-02-05 | Fuji Electric Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
JP3288218B2 (ja) * | 1995-03-14 | 2002-06-04 | 三菱電機株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
JP3872827B2 (ja) * | 1995-04-11 | 2007-01-24 | 株式会社東芝 | 高耐圧半導体素子 |
JP3738127B2 (ja) * | 1998-02-26 | 2006-01-25 | 新電元工業株式会社 | 高耐圧半導体デバイス |
JP2002016252A (ja) * | 2000-06-27 | 2002-01-18 | Toshiba Corp | 絶縁ゲート型半導体素子 |
JP2003174164A (ja) * | 2001-12-07 | 2003-06-20 | Shindengen Electric Mfg Co Ltd | 縦型mos半導体装置及びその製造方法 |
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2002
- 2002-03-15 JP JP2002072032A patent/JP3973934B2/ja not_active Expired - Fee Related
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JP2003273359A (ja) | 2003-09-26 |
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