JP3971323B2 - 磁気ランダムアクセスメモリ - Google Patents

磁気ランダムアクセスメモリ Download PDF

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Publication number
JP3971323B2
JP3971323B2 JP2003046511A JP2003046511A JP3971323B2 JP 3971323 B2 JP3971323 B2 JP 3971323B2 JP 2003046511 A JP2003046511 A JP 2003046511A JP 2003046511 A JP2003046511 A JP 2003046511A JP 3971323 B2 JP3971323 B2 JP 3971323B2
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JP
Japan
Prior art keywords
write
read
line
bit line
memory cell
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Expired - Fee Related
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JP2003046511A
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English (en)
Japanese (ja)
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JP2003318370A5 (enExample
JP2003318370A (ja
Inventor
佳久 岩田
知輝 東
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Toshiba Corp
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Toshiba Corp
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Priority to JP2003046511A priority Critical patent/JP3971323B2/ja
Publication of JP2003318370A publication Critical patent/JP2003318370A/ja
Publication of JP2003318370A5 publication Critical patent/JP2003318370A5/ja
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Publication of JP3971323B2 publication Critical patent/JP3971323B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
JP2003046511A 2002-02-22 2003-02-24 磁気ランダムアクセスメモリ Expired - Fee Related JP3971323B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003046511A JP3971323B2 (ja) 2002-02-22 2003-02-24 磁気ランダムアクセスメモリ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002046964 2002-02-22
JP2002-46964 2002-02-22
JP2003046511A JP3971323B2 (ja) 2002-02-22 2003-02-24 磁気ランダムアクセスメモリ

Publications (3)

Publication Number Publication Date
JP2003318370A JP2003318370A (ja) 2003-11-07
JP2003318370A5 JP2003318370A5 (enExample) 2006-03-30
JP3971323B2 true JP3971323B2 (ja) 2007-09-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003046511A Expired - Fee Related JP3971323B2 (ja) 2002-02-22 2003-02-24 磁気ランダムアクセスメモリ

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JP (1) JP3971323B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005260175A (ja) * 2004-03-15 2005-09-22 Sony Corp 磁気メモリ及びその記録方法
WO2007102456A1 (ja) 2006-03-06 2007-09-13 Nec Corporation 半導体記憶装置とその動作方法

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Publication number Publication date
JP2003318370A (ja) 2003-11-07

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