JP3965055B2 - Ｉｃチップの製造方法 - Google Patents

Ｉｃチップの製造方法 Download PDF

Info

Publication number
JP3965055B2
JP3965055B2 JP2002006556A JP2002006556A JP3965055B2 JP 3965055 B2 JP3965055 B2 JP 3965055B2 JP 2002006556 A JP2002006556 A JP 2002006556A JP 2002006556 A JP2002006556 A JP 2002006556A JP 3965055 B2 JP3965055 B2 JP 3965055B2
Authority
JP
Japan
Prior art keywords
wafer
pressure
layer
sensitive adhesive
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002006556A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003209070A5 (enExample
JP2003209070A (ja
Inventor
正輝 福岡
康彦 大山
宗宏 畠井
聡史 林
滋 檀上
政彦 北村
興一 矢嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Sekisui Chemical Co Ltd
Original Assignee
Disco Corp
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2002006556A priority Critical patent/JP3965055B2/ja
Application filed by Disco Corp, Sekisui Chemical Co Ltd filed Critical Disco Corp
Priority to TW092100744A priority patent/TWI267168B/zh
Priority to CNB038002329A priority patent/CN1322554C/zh
Priority to PCT/JP2003/000238 priority patent/WO2003060972A1/ja
Priority to US10/475,257 priority patent/US6939741B2/en
Priority to EP03701719A priority patent/EP1467402A4/en
Priority to KR10-2003-7014522A priority patent/KR20040105546A/ko
Publication of JP2003209070A publication Critical patent/JP2003209070A/ja
Publication of JP2003209070A5 publication Critical patent/JP2003209070A5/ja
Application granted granted Critical
Publication of JP3965055B2 publication Critical patent/JP3965055B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2002006556A 2002-01-15 2002-01-15 Ｉｃチップの製造方法 Expired - Lifetime JP3965055B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002006556A JP3965055B2 (ja) 2002-01-15 2002-01-15 Ｉｃチップの製造方法
CNB038002329A CN1322554C (zh) 2002-01-15 2003-01-15 Ic片的生产方法
PCT/JP2003/000238 WO2003060972A1 (en) 2002-01-15 2003-01-15 Ic chip manufacturing method
US10/475,257 US6939741B2 (en) 2002-01-15 2003-01-15 IC chip manufacturing method
TW092100744A TWI267168B (en) 2002-01-15 2003-01-15 Manufacturing method of IC chip
EP03701719A EP1467402A4 (en) 2002-01-15 2003-01-15 IC CHIP PROCESS
KR10-2003-7014522A KR20040105546A (ko) 2002-01-15 2003-01-15 Ｉｃ칩의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002006556A JP3965055B2 (ja) 2002-01-15 2002-01-15 Ｉｃチップの製造方法

Publications (3)

Publication Number Publication Date
JP2003209070A JP2003209070A (ja) 2003-07-25
JP2003209070A5 JP2003209070A5 (enExample) 2004-12-24
JP3965055B2 true JP3965055B2 (ja) 2007-08-22

Family

ID=27645291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002006556A Expired - Lifetime JP3965055B2 (ja) 2002-01-15 2002-01-15 Ｉｃチップの製造方法

Country Status (1)

Country Link
JP (1) JP3965055B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116610A (ja) * 2003-10-03 2005-04-28 Nitto Denko Corp 半導体ウエハの加工方法および半導体ウエハ加工用粘着シート
JP4716668B2 (ja) * 2004-04-21 2011-07-06 日東電工株式会社 被着物の加熱剥離方法及び被着物加熱剥離装置
JP4970863B2 (ja) * 2006-07-13 2012-07-11 日東電工株式会社 被加工物の加工方法

Also Published As

Publication number Publication date
JP2003209070A (ja) 2003-07-25

Similar Documents

Publication Publication Date Title
JP4791693B2 (ja) 半導体チップの製造方法
CN1322554C (zh) Ic片的生产方法
JP4704828B2 (ja) ウエハ貼着用粘着シート及びダイ接着用接着剤層付きｉｃチップの製造方法
JP2005197630A (ja) Ｉｃチップの製造方法
JP2003173993A (ja) バックグラインドテープ及び半導体ウエハの研磨方法
KR100878971B1 (ko) 양면 점착 테이프 및 이를 이용한 ｉｃ 칩의 제조 방법
JP4404526B2 (ja) 接着性物質、片面粘着テープ及び両面粘着テープ
JP2004186280A (ja) ウエハ貼着用粘着シート及び半導体装置の製造方法
JP3787526B2 (ja) Ｉｃチップの製造方法
JP2004228539A (ja) Ｉｃチップの製造方法
JP3965055B2 (ja) Ｉｃチップの製造方法
JP4540642B2 (ja) 半導体の製造方法
JP2004182799A (ja) 両面粘着テープ
JP2006013000A (ja) Ｉｃチップの製造方法
JP2004153227A (ja) Ｉｃチップの製造方法
JP2003151940A (ja) バックグラインドテープ及び半導体ウエハの研磨方法
JP2005294535A (ja) ダイアタッチフィルム付きｉｃチップの製造方法
JP4804719B2 (ja) 半導体チップの製造方法
JP2003173989A (ja) Ｉｃチップの製造方法
JP2004186281A (ja) Ｉｃチップの製造方法
JP2004001131A (ja) Ｉｃチップ製造用粘着シート及びｉｃチップの製造方法
JP2005123403A (ja) Ｉｃチップの製造方法及びｉｃチップの製造装置
JP4647896B2 (ja) 粘着テープ
JP2004006522A (ja) Ｉｃチップの製造方法
JP2004186261A (ja) Ｉｃチップの製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040706

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060406

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060822

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061010

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061219

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070215

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070508

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070525

R150 Certificate of patent or registration of utility model

Ref document number: 3965055

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110601

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120601

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130601

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140601

Year of fee payment: 7

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term