JP3962443B2 - 半導体装置とその製造方法 - Google Patents

半導体装置とその製造方法 Download PDF

Info

Publication number
JP3962443B2
JP3962443B2 JP05007997A JP5007997A JP3962443B2 JP 3962443 B2 JP3962443 B2 JP 3962443B2 JP 05007997 A JP05007997 A JP 05007997A JP 5007997 A JP5007997 A JP 5007997A JP 3962443 B2 JP3962443 B2 JP 3962443B2
Authority
JP
Japan
Prior art keywords
wiring
insulating film
semiconductor
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP05007997A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10247648A5 (enExample
JPH10247648A (ja
Inventor
俊二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP05007997A priority Critical patent/JP3962443B2/ja
Publication of JPH10247648A publication Critical patent/JPH10247648A/ja
Publication of JPH10247648A5 publication Critical patent/JPH10247648A5/ja
Application granted granted Critical
Publication of JP3962443B2 publication Critical patent/JP3962443B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP05007997A 1997-03-05 1997-03-05 半導体装置とその製造方法 Expired - Fee Related JP3962443B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP05007997A JP3962443B2 (ja) 1997-03-05 1997-03-05 半導体装置とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05007997A JP3962443B2 (ja) 1997-03-05 1997-03-05 半導体装置とその製造方法

Publications (3)

Publication Number Publication Date
JPH10247648A JPH10247648A (ja) 1998-09-14
JPH10247648A5 JPH10247648A5 (enExample) 2005-01-06
JP3962443B2 true JP3962443B2 (ja) 2007-08-22

Family

ID=12849016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05007997A Expired - Fee Related JP3962443B2 (ja) 1997-03-05 1997-03-05 半導体装置とその製造方法

Country Status (1)

Country Link
JP (1) JP3962443B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208622A (ja) * 1999-01-12 2000-07-28 Tokyo Electron Ltd 半導体装置及びその製造方法
JP4363716B2 (ja) 1999-06-25 2009-11-11 株式会社東芝 Ｌｓｉの配線構造の設計方法
US6312988B1 (en) * 1999-09-02 2001-11-06 Micron Technology, Inc. Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions
CN1871755A (zh) * 2003-10-24 2006-11-29 日本先锋公司 半导体激光装置及制造方法
JP4955277B2 (ja) * 2006-02-03 2012-06-20 ラピスセミコンダクタ株式会社 絶縁膜の形成方法
CN111542917B (zh) * 2018-01-05 2025-04-15 索尼半导体解决方案公司 半导体装置
CN112219274B (zh) * 2018-06-27 2024-09-17 索尼半导体解决方案公司 半导体装置和半导体装置的制造方法

Also Published As

Publication number Publication date
JPH10247648A (ja) 1998-09-14

Similar Documents

Publication Publication Date Title
JP3694021B2 (ja) 半導体デバイスの製造方法
US6525415B2 (en) Three-dimensional semiconductor integrated circuit apparatus and manufacturing method therefor
US7906363B2 (en) Method of fabricating semiconductor device having three-dimensional stacked structure
TWI536531B (zh) 基板、紅外線感測器、及貫通電極形成方法
JP4414131B2 (ja) 半導体装置のボンディングパッド構造とその製造法
CN109390305B (zh) 一种键合晶圆及其制备方法
JP3017144B2 (ja) 半導体メモリ装置およびその製造方法
JPH07506936A (ja) ３次元集積回路およびその製造方法
CN112908936B (zh) 半导体结构及其形成方法
CN107644838A (zh) 用于三维存储器的晶圆三维集成引线工艺及其结构
JP4137328B2 (ja) ３次元半導体集積回路装置の製造方法
JP3962443B2 (ja) 半導体装置とその製造方法
JPH07161936A (ja) 半導体記憶装置とその製造方法
JP2019047043A (ja) 積層型半導体素子および半導体素子基板、ならびにこれらの製造方法
JPH0750772B2 (ja) 半導体装置およびその製造方法
US6677193B2 (en) Method of producing semiconductor device and its structure
JPH11150185A (ja) 半導体装置及びその製造方法
CN107644841A (zh) 用于三维存储器的晶圆三维集成引线工艺及其结构
US5589419A (en) Process for fabricating semiconductor device having a multilevel interconnection
KR100962229B1 (ko) 반도체 장치 및 그 제조 방법
JP3080073B2 (ja) 半導体装置の製造方法
CN115548024B (en) Three-dimensional memory device and manufacturing method thereof
JP4310267B2 (ja) 積層デバイスの製造方法
JP4110776B2 (ja) 半導体装置および半導体装置の製造方法
JPS62155537A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040929

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20041005

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041203

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050920

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051117

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070424

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070521

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100525

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110525

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120525

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130525

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees