JP3955360B2 - レチクルの配線パターンの製造方法 - Google Patents
レチクルの配線パターンの製造方法 Download PDFInfo
- Publication number
- JP3955360B2 JP3955360B2 JP19996797A JP19996797A JP3955360B2 JP 3955360 B2 JP3955360 B2 JP 3955360B2 JP 19996797 A JP19996797 A JP 19996797A JP 19996797 A JP19996797 A JP 19996797A JP 3955360 B2 JP3955360 B2 JP 3955360B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- pattern
- wiring pattern
- interval
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims description 45
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 25
- 239000011229 interlayer Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000005498 polishing Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000008719 thickening Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19996797A JP3955360B2 (ja) | 1996-07-30 | 1997-07-25 | レチクルの配線パターンの製造方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8-199987 | 1996-07-30 | ||
| JP19998796 | 1996-07-30 | ||
| JP8-260431 | 1996-10-01 | ||
| JP26043196 | 1996-10-01 | ||
| JP19996797A JP3955360B2 (ja) | 1996-07-30 | 1997-07-25 | レチクルの配線パターンの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10163210A JPH10163210A (ja) | 1998-06-19 |
| JPH10163210A5 JPH10163210A5 (enExample) | 2005-05-12 |
| JP3955360B2 true JP3955360B2 (ja) | 2007-08-08 |
Family
ID=27327729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19996797A Expired - Fee Related JP3955360B2 (ja) | 1996-07-30 | 1997-07-25 | レチクルの配線パターンの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3955360B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4387654B2 (ja) | 2002-10-10 | 2009-12-16 | パナソニック株式会社 | 半導体装置およびその製造方法 |
| JP5460141B2 (ja) * | 2009-06-26 | 2014-04-02 | ラピスセミコンダクタ株式会社 | 半導体装置 |
-
1997
- 1997-07-25 JP JP19996797A patent/JP3955360B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10163210A (ja) | 1998-06-19 |
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